AUIRL7766M2TR Product Datasheet

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AUIRL7766M2TR 

Base Part Number  

Package Type   

Standard Pack 

Form Quantity 

AUIRL7766M2 

DirectFET Medium Can 

Tape and Reel 

4800 

AUIRL7766M2TR 

Orderable Part Number  

AUTOMOTIVE GRADE 

V

(BR)DSS 

100V 

R

DS(on)

   typ. 

8.0m

 

I

D (Silicon Limited) 

51A 

             max. 

10m

 

Q

g (typical)

 44nC 

 

DirectFET

®

 

ISOMETRIC 

 

 

M4 

Automotive DirectFET

®

 Power MOSFET  

Applicable DirectFET

®

  Outline and  Substrate Outline   

SB 

SC 

  

  

M2  

M4 

  

L4 

L6 

L8 

  

Description 

The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging 
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The 
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or 
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® 
package allows dual sided cooling to maximize thermal transfer in automotive power systems. 
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging 
platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement 
specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing 
techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature 
and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current 
automotive applications. 

Absolute Maximum Ratings 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and 
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under 
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

  

Parameter Max. 

Units 

V

DS 

Drain-to-Source Voltage 

100 

V  

V

GS 

Gate-to-Source Voltage 

±16 

I

D

 @ T

C

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V (Silicon Limited)  51 

I

D

 @ T

C

 = 100°C 

Continuous Drain Current, V

GS

 @ 10V (Silicon Limited)  36 

I

D

 @ T

A

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V (Silicon Limited)  10 

I

DM 

Pulsed Drain Current  204 

P

D

 @T

C

 = 25°C 

Power Dissipation  62.5 

P

D

 @T

A

 = 25°C 

Power Dissipation  2.5 

E

AS 

Single Pulse Avalanche Energy (Thermally Limited)  61 

mJ  

E

AS 

(Tested)

 

Single Pulse Avalanche Energy  237 

I

AR 

Avalanche Current  

See Fig. 16, 17, 18a, 18b  

E

AR 

Repetitive Avalanche Energy  

mJ 

T

Peak Soldering Temperature 

270 

°C  

T

J  

Operating Junction and 

-55  to + 175 

T

STG 

Storage Temperature Range 

  

 

2015-12-11 

HEXFET® is a registered trademark of Infineon. 
*Qualification standards can be found at 

www.infineon.com

 

  Advanced Process Technology  

 

Optimized for Automotive DC-DC and 

 

other Heavy Load Applications  

 

Logic Level Gate Drive  

 

Exceptionally Small Footprint and Low Profile  

 

High Power Density  

 

Low Parasitic Parameters 

 

 

Dual Sided Cooling  

 

175°C Operating Temperature  

 

Repetitive Avalanche Capability for Robustness and Reliability  

 

Lead free, RoHS and Halogen free  

 Automotive Qualified * 

 

D

D

G

S

S

S

S

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AUIRL7766M2TR 

 

2015-12-11 

Thermal Resistance  

Symbol Parameter 

Typ. 

Max. 

Units 

R

JA

  

Junction-to-Ambient   

––– 

60 

R

JA

  

Junction-to-Ambient   

12.5 

––– 

R

JA

  

Junction-to-Ambient   

20 

––– 

R

J-Can

  

Junction-to-Can  ––– 

2.4 

R

J-PCB

  

Junction-to-PCB Mounted  

1.0 

––– 

 

Linear Derating Factor  0.42 

W/°C 

°C/W  

Static Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified)  

Symbol Parameter 

Min. 

Typ. 

Max. 

Units 

Conditions 

V

(BR)DSS 

Drain-to-Source Breakdown Voltage 

100 

––– 

––– 

V

GS

 = 0V, I

D

 = 250µA 

V

(BR)DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

–––  0.067  ––– 

V/°C  Reference to 25°C, I

D

 = 5.0mA 

R

DS(on) 

   

Static Drain-to-Source On-Resistance    

––– 8.0  10 

V

GS

 = 10V, I

D

 = 31A  

––– 8.7 10.5 

V

GS

 = 4.5V, I

D

 = 26A  

V

GS(th) 

Gate Threshold Voltage 

1.0 

––– 

2.5 

V

DS

 = V

GS

, I

D

 = 150µA  

V

GS(th)

/

T

J  

Gate Threshold Voltage Coefficient 

––– 

-7.3 

–––  mV/°C 

gfs Forward 

Transconductance 

110 

––– 

––– 

V

DS

 = 25V, I

D

 = 31A 

R

Internal Gate Resistance 

–––  0.88 

––– 

   

I

DSS 

  

Drain-to-Source Leakage Current   

––– –––  5.0 

µA 

V

DS

 = 100V, V

GS

 = 0V 

––– ––– 250 

V

DS

 = 100V, V

GS

 = 0V, T

J

 = 125°C 

I

GSS 

  

Gate-to-Source Forward Leakage 

––– 

––– 

100 

nA 

V

GS

 = 16V 

Gate-to-Source Reverse Leakage 

––– 

–––  -100 

V

GS

 = -16V 

Dynamic Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified)  

Symbol Parameter 

Min. 

Typ. 

Max. 

Units 

Conditions 

Q

Total Gate Charge 

––– 

44 

66 

nC  

V

DS

 = 50V 

Q

gs1 

Gate-to-Source Charge 

––– 

9.6 

––– 

V

GS

 = 4.5V 

Q

gs2 

Gate-to-Source Charge 

––– 

4.5 

––– 

I

D

 = 31A 

Q

gd 

Gate-to-Drain ("Miller") Charge 

––– 19 ––– 

See Fig. 11 

Q

godr 

Gate Charge Overdrive 

–––  10.9 

––– 

 

Q

sw 

Switch Charge (Q

gs2

 + Q

gd

) ––– 

23.5 

––– 

 

Q

oss 

Output Charge 

––– 

35 

––– 

nC  V

DS

 = 16V, V

GS

 = 0V 

t

d(on) 

Turn-On Delay Time 

––– 

16 

––– 

ns 

V

DD

 = 50V 

t

Rise Time 

––– 

24 

––– 

I

D

 = 31A 

t

d(off) 

Turn-Off Delay Time 

––– 

120 

––– 

R

G

 = 6.8

 

t

Fall Time 

––– 

49 

––– 

V

GS

 = 10V   

C

iss 

Input Capacitance 

–––  5305  ––– 

pF 

V

GS

 = 0V 

C

oss 

Output Capacitance 

––– 

460 

––– 

V

DS

 = 25V 

C

rss 

Reverse Transfer Capacitance 

––– 

195 

––– 

ƒ = 1.0 MHz 

C

oss 

Output Capacitance 

–––  2735  ––– 

V

GS

 = 0V, V

DS

 = 1.0V, ƒ = 1.0 MHz 

C

oss 

Output Capacitance 

––– 

270 

––– 

V

GS

 = 0V, V

DS

 = 80V, ƒ = 1.0 MHz 

C

oss

 eff.  

Effective Output Capacitance  

––– 

370 

––– 

V

GS

 = 0V, V

DS

 = 0V to 80V  

m

 

Notes  through  are on page 3   

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AUIRL7766M2TR 

 

2015-12-11 

Diode Characteristics 

 

 

 

 

 

Symbol 

        Parameter 

Min.  Typ.  Max.  Units 

Conditions 

I

  

Continuous Source Current  

–––    –––   

51 

A  

MOSFET symbol 

(Body Diode) 

showing  the 

I

SM 

  

Pulsed Source Current 

–––    –––   

integral reverse 

(Body Diode)  

p-n junction diode. 

V

SD 

Diode Forward Voltage 

––– 

––– 

1.3 

T

J

 = 25°C, I

S

 = 31A, V

GS

 = 0V  

t

rr 

   

Reverse Recovery Time   

––– 45  68  ns  T

J

 = 25°C, I

F

 = 31A, V

DD

 = 25V 

Q

rr 

  

Reverse Recovery Charge   

––– 83 125 nC  dv/dt = 100A/µs  

204  

 Surface mounted on 1 in. 

square Cu board  (still air). 

 Mounted on minimum 

footprint full size board with 
metalized back and with small 
clip heatsink (still air). 

 Mounted to a PCB with 

small clip heatsink (still air) 

  Click on this section to link to the appropriate technical paper. 

  Click on this section to link to the DirectFET

®

  Website. 

  Surface mounted on 1 in. square Cu board, steady state. 

  T

C

 measured with thermocouple mounted to top (Drain) of part. 

  Repetitive rating;  pulse width limited by max. junction temperature. 

 Starting T

J

 = 25°C, L = 0.13mH, R

G

 = 50

, I

AS

 = 31A, V

GS

 = 20V. 

 Pulse width 

 400µs; duty cycle  2%. 

  Used double sided cooling, mounting pad with large heatsink. 

  Mounted on minimum footprint full size board with metalized back and with small clip heat sink. 

  R

 is measured at T

J

 of approximately 90°C. 

D

S

G

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AUIRL7766M2TR 

 

2015-12-11 

Fig. 3 

Typical On-Resistance vs. Gate Voltage

 

 

Fig. 1 Typical Output Characteristics 

Fig 5.  Transfer Characteristics

 

Fig 6.  Normalized On-Resistance vs. Temperature

 

 

Fig. 2 Typical Output Characteristics 

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o

-S

ou

rc

e

 C

u

rr

en

(A

)

VGS

TOP           15V

10V

7.0V

4.5V

3.5V

3.0V

2.8V

BOTTOM

2.5V

60µs PULSE WIDTH

Tj = 25°C

2.5V

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

u

rr

en

t (

A

)

2.5V

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP           15V

10V

7.0V

4.5V

3.5V

3.0V

2.8V

BOTTOM

2.5V

2

4

6

8

10

12

14

16

VGS, Gate -to -Source Voltage  (V)

0

5

10

15

20

25

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

)

ID = 31A

TJ = 125°C

TJ = 25°C

0

25

50

75

100 125 150 175 200

ID, Drain Current (A)

0

10

20

30

40

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

)

TJ = 25°C

TJ = 125°C

Vgs = 10V 

1

2

3

4

5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 

(A

)

TJ = -40°C

TJ = 25°C

TJ = 175°C

VDS = 50V

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 31A

VGS = 10V

Fig. 4 

Typical On-Resistance vs. Drain Current

 

 

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AUIRL7766M2TR 

 

2015-12-11 

 

Fig 8.  Typical Source-Drain Diode Forward Voltage 

Fig 9.  Typical Forward Trans conductance vs. Drain Current 

Fig 10.  Typical Capacitance vs. Drain-to-Source Voltage 

-75 -50 -25 0

25 50 75 100 125 150 175

TJ , Temperature ( °C )

0.5

1.0

1.5

2.0

2.5

3.0

V

G

S

(t

h)

,  G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 150µA

ID = 250µA

ID = 1.0mA

ID = 1.0A

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

1.0

10

100

1000

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = -40°C

TJ = 25°C

TJ = 175°C

VGS = 0V

0

20

40

60

80

100

120

ID,Drain-to-Source Current (A)

0

50

100

150

200

250

G

fs

, F

or

w

ar

T

ra

ns

co

nd

uc

ta

nc

(S

)

TJ = 25°C

TJ = 175°C

VDS = 5.0V 
380µs PULSE WIDTH

Fig. 7 Typical Threshold Voltage vs. 

Junction Temperature 

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss    = Cgs + Cgd,  C ds SHORTED
Crss    = Cgd 
Coss   = Cds + Cgd

Coss

Crss

Ciss

0

20

40

60

80

100

120

 QG,  Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 80V

VDS= 50V

VDS= 20V

ID= 31A

Fig 11.  Typical Gate Charge vs.  

 Gate-to-Source Voltage 

25

50

75

100

125

150

175

 TC , Case Temperature (°C)

0

10

20

30

40

50

60

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

Fig 12. Maximum Drain Current vs. Case Temperature 

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AUIRL7766M2TR 

 

2015-12-11 

Fig 16.  Typical Avalanche Current vs. Pulse Width  

Fig 15.  Maximum Effective Transient Thermal Impedance, Junction-to-Case  

0

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

OPERATION IN THIS AREA 

LIMITED BY R DS(on)

Tc = 25°C

Tj = 175°C

Single Pulse

100µsec

1msec

10msec

DC

25

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

0

50

100

150

200

250

E

A

S

 , 

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

ID

TOP         6.7A

17A

BOTTOM 31A

Fig 14. Maximum Avalanche Energy vs. Temperature 

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

he

rm

al

 R

es

po

ns

Z

 th

JC

 )

 °

C

/W

0.20
0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

J

J

1

1

2

2

3

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci= 

iRi

Ci= 

iRi

C

C

4

4

R

4

R

4

0.07641 

0.000021 

0.36635 

0.000737 

0.94890 

0.0391496 

1.00767 

0.0073206 

Ri (°C/W) 

i (sec)

Fig 13.  Maximum Safe Operating Area 

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

0.01

0.1

1

10

100

1000

A

va

la

nc

he

 C

ur

re

nt

 (

A

)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming  j = 25°C and 

Tstart = 150°C.

0.01

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming Tj = 150°C and 

Tstart =25°C (Single Pulse)

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AUIRL7766M2TR 

 

2015-12-11 

Notes on Repetitive Avalanche Curves , Figures 16, 17: 
(For further info, see AN-1005 at www.infineon.com)
 
1.  Avalanche failures assumption:  
 

Purely a thermal phenomenon and failure occurs at a temperature far in  

 

excess of T

jmax

. This is validated for every part type. 

2.  Safe operation in Avalanche is allowed as long as T

jmax

 is not exceeded. 

3.   Equation below based on circuit and waveforms shown in Figures 18a, 18b. 
4.   P

D (ave) 

= Average power dissipation per single avalanche pulse. 

5.   BV = Rated breakdown voltage (1.3 factor accounts for voltage increase  
 during 

avalanche). 

6.   I

av 

= Allowable avalanche current. 

7. 

T

 = 

Allowable rise in junction temperature, not to exceed

 

T

jmax 

(assumed as  

 

25°C in Figure 16, 17).  

 

t

av = 

Average time in avalanche. 

 

D = Duty cycle in avalanche =  t

av 

·f 

 

Z

thJC

(D, t

av

) = Transient thermal resistance, see Figures 15) 

 

P

D (ave)

 = 1/2 ( 1.3·BV·I

av

) = 

T/ Z

thJC

 

I

av

 = 2

T/ [1.3·BV·Z

th

E

AS (AR) 

= P

D (ave)

·t

av

 

Fig 17.  Maximum Avalanche Energy vs. Temperature 

Fig 18a.  Unclamped Inductive Test Circuit 

Fig 18b.  Unclamped Inductive Waveforms 

Fig 19a.  Gate Charge Test Circuit 

Fig 19b.   Gate Charge Waveform 

VDD 

Fig 20a.  Switching Time Test Circuit 

Fig 20b.  Switching Time Waveforms 

25

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

0

10

20

30

40

50

60

70

E

A

R

 , 

A

va

la

nc

he

 E

ne

rg

(m

J)

TOP          Single Pulse                
BOTTOM   1.0% Duty Cycle
ID = 31A

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background image

 

AUIRL7766M2TR 

 

2015-12-11 

DirectFET

®

  Board Footprint, M4 (Medium Size Can). 

Please see DirectFET

®

  application note AN-1035 for all details regarding the assembly of DirectFET

®

 .  

This includes all recommendations for stencil and  substrate designs.

  

G

D

S

D

D

D

S

S

S

G = GATE
D = DRAIN
S = SOURCE

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

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background image

 

AUIRL7766M2TR 

 

2015-12-11 

DirectFET

®

  Outline Dimension, M4 Outline (Medium Size Can). 

Please see DirectFET

®

  application note AN-1035 for all details regarding the assembly of DirectFET

®

 . This includes 

all recommendations for stencil and  substrate designs. 

DirectFET

® 

 Part Marking 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

0.032

0.78

0.82

0.031

0.015

0.017

0.38

0.42

R

0.003

0.02

0.08

0.001

M

P

0.029
0.007

0.68
0.09

0.74
0.17

0.027
0.003

L1

0.142

3.50

3.60

0.138

CODE

A
B
C
D
E
F

G

H

J

K

L

0.047
0.094

0.156

0.032

0.018
0.024

MAX

0.250
0.201

1.10
2.30

3.85

0.78

0.35
0.58

MIN

6.25
4.80

1.20
2.40

3.95

0.82

0.45
0.62

MAX

6.35
5.05

0.090

0.043

0.152

0.031

0.023

0.014

MIN

0.189

0.246

METRIC

IMPERIAL

DIMENSIONS

0.78

0.82

0.032

0.031

PART NUMBER

LOGO

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

"AU" = GATE AND

AUTOMOTIVE MARKING

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background image

 

AUIRL7766M2TR 

10 

 

2015-12-11 

DirectFET

® 

 Tape & Reel Dimension (Showing component orientation)  

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

REEL DIMENSIONS

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts, ordered as AUIRL7766M2TR.

B

C

 MAX
 N.C
 N.C

0.520
 N.C
 N.C
0.724
0.567
0.606

IMPERIAL

H

 MIN
330.0
 20.2
 12.8
  1.5

100.0

  N.C
 12.4
 11.9

STANDARD OPTION (QTY 4800)

CODE

  A
  B
  C
  D
  E
  F
  G
  H

 MAX

 N.C
 N.C
 13.2
 N.C
 N.C
 18.4
 14.4
 15.4

 MIN

12.992

0.795
0.504
0.059
3.937
 N.C
0.488
0.469

METRIC

G

E

F

A

D

LOADED TAPE FEED DIRECTION

A

E

NOTE: CONTROLLING
DIMENSIONS IN MM

CODE

 A
 B
 C
 D
 E

 F

 G

 H

F

B

C

IMPERIAL

 MIN

0.311

0.154
0.469
0.215

0.201

0.256
0.059
0.059

 MAX

 8.10
 4.10

12.30

 5.55
 5.30
 6.70

 N.C

 1.60

 MIN

 7.90
 3.90

11.90

 5.45
 5.10
 6.50
 1.50
 1.50

METRIC

DIMENSIONS

 MAX
0.319

0.161

0.484
0.219
0.209
0.264

 N.C

0.063

D

H

G

Maker
Infineon Technologies