HEXFET
®
Power MOSFET
S
D
G
G
D
S
Gate
Drain
Source
TO-220AB
AUIRL2203N
D
S
D
G
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Logic Level Gate Drive
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Specifically designed for Automotive applications, this
stripe planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods
may affect device reliability. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
30V
R
DS(on)
max.
7m
Ω
I
D (Silicon Limited)
116A
h
I
D (Package Limited)
75A
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy
dg
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case
–––
0.85
R
θCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
±16
5.0
60
18
10 lbf
yin (1.1Nym)
-55 to + 175
300 (1.6mm from case )
°C/W
W
290
180
Max.
116
h
82
h
400
75
1.2
AUIRL2203N
AUTOMOTIVE GRADE
1
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Form
Quantity
AUIRL2203N
TO-220
Tube
50
AUIRL2203N
Base part number
Package Type
Standard Pack
Orderable Part Number
2
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AUIRL2203N
S
D
G
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 0.16mH, R
G
= 25
Ω, I
AS
= 60A, V
GS
=10V (See Figure 12)
I
SD
≤ 60A, di/dt ≤ 110A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C
Pulse width
≤ 400μs; duty cycle ≤ 2%.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Notes:
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
ΔV
(BR)DSS
/
ΔT
J
Breakdown Voltage Temp. Coefficient
–––
0.029
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
7.0
–––
–––
10
V
GS(th)
Gate Threshold Voltage
1.0
–––
–––
V
gfs
Forward Transconductance
73
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
25
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
–––
60
Q
gs
Gate-to-Source Charge
–––
–––
14
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
–––
33
t
d(on)
Turn-On Delay Time
–––
11
–––
t
r
Rise Time
–––
160
–––
t
d(off)
Turn-Off Delay Time
–––
23
–––
ns
t
f
Fall Time
–––
66
–––
L
D
Internal Drain Inductance
Between lead,
nH
6mm (0.25in.)
L
S
Internal Source Inductance
Between lead,
and center of die contact
C
iss
Input Capacitance
–––
3290
–––
C
oss
Output Capacitance
–––
1270
–––
C
rss
Reverse Transfer Capacitance
–––
170
–––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
I
S
Continuous Source Current
(Body Diode)
A
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.2
V
t
rr
Reverse Recovery Time
–––
56
84
ns
Q
rr
Reverse Recovery Charge
–––
110
170
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
pF
–––
MOSFET symbol
showing the
–––
–––
–––
116
h
400
–––
–––
–––
–––
4.5
7.5
V
GS
= 4.5V, See Fig.6 and 13
f
V
DD
= 15V
I
D
= 60A
R
G
= 1.8
Ω
T
J
= 25°C, I
S
= 60A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 60A
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 60A
f
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 60A
f
I
D
= 60A
V
DS
= 24V
Conditions
V
GS
= 4.5V,
, See Fig.10f
V
GS
= 0V
V
DS
= 25V
V
GS
= 16V
V
GS
= -16V
m
Ω
V
GS
= 4.5V, I
D
= 48A
f
3
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AUIRL2203N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
V , Drain-to-Source Voltage (V)
I , D
rain-to-S
ource C
urrent (A
)
DS
D
2.7V
1
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
10
100
1000
2.0
3.0
4.0
5.0
6.0
7.0
V = 15V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
rain-to-Source C
urrent (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
D
S
(on)
°
V
=
I =
GS
D
10V
100A
4
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AUIRL2203N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
0
3
6
9
12
15
Q , Total Gate Charge (nC)
V , Gate-to-Source Vol
tage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
60A
V
= 15V
DS
V
= 24V
DS
0.1
1
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
0
1000
2000
3000
4000
5000
6000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
5
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AUIRL2203N
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
al
R
esponse
(Z
)
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
175
0
20
40
60
80
100
120
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
6
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AUIRL2203N
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μF
50K
Ω
.2
μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
25
50
75
100
125
150
175
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E
,
S
ingl
e P
ul
se A
val
anche E
ner
gy (
m
J)
J
AS
°
ID
TOP
BOTTOM
24A
42A
60A
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
V
GS
7
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AUIRL2203N
Fig 14. For N-channel
HEXFET
®
power MOSFETs
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
8
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AUIRL2203N
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUIRL2203N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
9
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AUIRL2203N
† Qualification standards can be found at International Rectifier’s web site:
http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
Qualification Information
†
Moisture Sensitivity Level
3L-TO-220
N/A
RoHS Compliant
Yes
ESD
Machine Model
Class M3(+/- 400V )
†††
(per AEC-Q101-002)
Human Body Model
Class H1C(+/- 2000V )
†††
(per AEC-Q101-001)
Charged Device Model
Class C5(+/- 2000V )
†††
(per AEC-Q101-005)
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
10
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AUIRL2203N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such
altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use
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Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent
regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible
for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
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the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
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Tel: (310) 252-7105