AUIRL2203N Product Datasheet

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

HEXFET

®

 Power MOSFET

S

D

G

G

D

S

Gate

Drain

Source

TO-220AB

AUIRL2203N

D

S

D

G

Features

l

 

Advanced Planar Technology

l

 Low On-Resistance

l

 Logic Level Gate Drive

l

 

Dynamic dV/dT Rating

l

 175°C Operating Temperature

l

 Fast Switching

l

 

Fully Avalanche Rated

l

 

Repetitive Avalanche Allowed up to Tjmax

l

 

Lead-Free, RoHS Compliant

l

 Automotive Qualified *

Specifically designed for Automotive applications, this
stripe planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.

Description

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods
may affect device reliability. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions. Ambient temperature (T

A

) is 25°C, unless otherwise specified.

HEXFET

®

 is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

V

(BR)DSS

30V

R

DS(on)

   max.

7m

Ω

I

D (Silicon Limited)

116A

h

I

D (Package Limited)

75A

Parameter

Units

I

D

 @ T

C

 = 25°C

Continuous Drain Current, V

GS

 @ 10V (Silicon Limited)

I

D

 @ T

C

 = 100°C

Continuous Drain Current, V

GS

 @ 10V (Silicon Limited)

A

I

D

 @ T

C

 = 25°C

Continuous Drain Current, V

GS

 @ 10V (Package Limited)

I

DM

Pulsed Drain Current 

c

P

D

 @T

C

 = 25°C

Power Dissipation  
Linear Derating Factor  

W/°C

V

GS

Gate-to-Source Voltage

V

E

AS 

Single Pulse Avalanche Energy 

dg

mJ

I

AR

Avalanche Current

c

A

E

AR

Repetitive Avalanche Energy 

c

mJ

dv/dt

Peak Diode Recovery dv/dt 

e

V/ns

T

Operating Junction and

T

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

Units

R

θJC 

Junction-to-Case

–––

0.85

R

θCS 

Case-to-Sink, Flat, Greased Surface

0.50

–––

 ±16

5.0

60
18

10 lbf

yin (1.1Nym)

-55  to + 175

300 (1.6mm from case )

°C/W

W

290

180

Max.

116

h

82

h

400

75

1.2

AUIRL2203N

AUTOMOTIVE GRADE

  

     

 1

            www.irf.com  

© 

2014 International Rectifier   

        

Submit  Datasheet Feedback                   

March 25, 2014

Form

Quantity

AUIRL2203N

TO-220

Tube

50

AUIRL2203N

Base part number

Package Type

Standard Pack

Orderable Part Number

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 2

            www.irf.com  

© 

2014 International Rectifier   

         

Submit  Datasheet Feedback                

March 25, 2014

AUIRL2203N

S

D

G



Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 )

‚

Starting T

= 25°C, L = 0.16mH,  R

= 25

Ω, I

AS 

= 60A, V

GS

=10V (See Figure 12)

ƒ

I

SD 

≤ 60A, di/dt ≤ 110A/μs, V

DD

 

≤ V

(BR)DSS

, T

≤ 175°C

„

Pulse width 

≤ 400μs; duty cycle ≤ 2%.

…

This is a calculated value limited to T

J

 = 175°C .

†

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

Notes:

S

D

G

Static Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage

30

–––

–––

V

ΔV

(BR)DSS

/

ΔT

Breakdown Voltage Temp. Coefficient

–––

0.029

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

–––

7.0

–––

–––

10

V

GS(th)

Gate Threshold Voltage

1.0

–––

–––

V

gfs

Forward Transconductance

73

–––

–––

S

I

DSS

Drain-to-Source Leakage Current

–––

–––

25

μA

–––

–––

250

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

nA

Gate-to-Source Reverse Leakage

–––

–––

 -100

Dynamic  Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified)

Q

g

Total Gate Charge

–––

–––

60

Q

gs

Gate-to-Source Charge

–––

–––

14

nC

Q

gd

Gate-to-Drain ("Miller") Charge

–––

–––

33

t

d(on)

Turn-On Delay Time

–––

11

–––

t

r

Rise Time

–––

160

–––

t

d(off)

Turn-Off Delay Time

–––

23

–––

ns

t

f

Fall Time

–––

66

–––

L

D

Internal Drain Inductance

Between lead, 

nH

6mm (0.25in.)

L

S

Internal Source Inductance

Between lead, 

and center of die contact

C

iss

Input Capacitance

–––

3290

–––

C

oss

Output Capacitance

–––

1270

–––

C

rss

Reverse Transfer Capacitance

–––

170

–––

ƒ = 1.0MHz, See Fig.5

Diode Characteristics

        Parameter

Min.

Typ.

Max. Units

I

S

Continuous Source Current 

(Body Diode)

A

I

SM

Pulsed Source Current

(Body Diode)

c

V

SD

Diode Forward Voltage

–––

–––

1.2

V

t

rr

Reverse Recovery Time

–––

56

84

ns

Q

rr

Reverse Recovery Charge

–––

110

170

nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

pF

–––

MOSFET symbol

showing  the

–––

–––

–––

116

h

400

–––

–––

–––

–––

4.5

7.5

V

GS

 = 4.5V, See Fig.6 and 13 

f

V

DD

 = 15V

I

D

 = 60A

R

G

 = 1.8

Ω

T

J

 = 25°C, I

S

 = 60A, V

GS

 = 0V 

f

T

J

 = 25°C, I

F

 = 60A

di/dt = 100A/μs 

f

Conditions

V

GS

 = 0V, I

D

 = 250μA

Reference to 25°C, I

D

 = 1mA

V

GS

 = 10V, I

D

 = 60A 

f

V

DS

 = V

GS

, I

D

 = 250μA

V

DS

 = 30V, V

GS

 = 0V

V

DS

 = 24V, V

GS

 = 0V, T

J

 = 125°C

integral reverse

p-n junction diode.

V

DS

 = 25V, I

D

 = 60A

f

I

D

 =  60A

V

DS

 = 24V

Conditions

V

GS

 = 4.5V,

, See Fig.10f

V

GS

 = 0V

V

DS

 = 25V

V

GS

 = 16V

V

GS

 = -16V

m

Ω

V

GS

 = 4.5V, I

D

 = 48A 

f

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 3

            www.irf.com  

© 

2014 International Rectifier   

      

Submit  Datasheet Feedback                 

March 25, 2014

AUIRL2203N

Fig 4.  Normalized On-Resistance

Vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

 1

 10

 100

 1000

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 25 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V     , Drain-to-Source Voltage (V)

I   ,  D

rain-to-S

ource C

urrent (A

)

DS

D

2.7V

 1

 10

 100

 1000

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 175 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V     , Drain-to-Source Voltage (V)

I   ,  Drain-to-Source Current (A)

DS

D

2.7V

 10

 100

 1000

2.0

3.0

4.0

5.0

6.0

7.0

V      = 15V
20μs PULSE WIDTH

DS

V     , Gate-to-Source Voltage (V)

I   ,  D

rain-to-Source C

urrent (A)

GS

D

T  = 25  C

J

°

T  = 175  C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T  , Junction Temperature (  C)

R            , Drain-to-Source On Resistance

(Normalized)

J

D

S

(on)

°

V

=

I =

GS

D

10V

100A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 4

            www.irf.com  

© 

2014 International Rectifier   

         

Submit  Datasheet Feedback                

March 25, 2014

AUIRL2203N

Fig 8.  Maximum Safe Operating Area

Fig 6.  Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5.  Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7.  Typical Source-Drain Diode

Forward Voltage

0

20

40

60

80

0

3

6

9

12

15

Q   , Total Gate Charge (nC)

V     , Gate-to-Source Vol

tage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE       

I =

D

13

60A

V

= 15V

DS

V

= 24V

DS

0.1

 1

 10

 100

 1000

0.0

0.4

0.8

1.2

1.6

2.0

2.4

V     ,Source-to-Drain Voltage (V)

I     , Reverse Drain Current (A)

SD

SD

V      = 0 V 

GS

T  = 25  C

J

°

T  = 175  C

J

°

 1

 10

 100

0

1000

2000

3000

4000

5000

6000

V     , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C      SHORTED

GS
iss

gs

gd ,

ds

rss

gd

oss

ds

gd

C

iss

C

oss

C

rss

1

10

100

VDS  , Drain-toSource Voltage (V)

1

10

100

1000

10000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C
Tj = 175°C
Single Pulse

1msec

10msec

OPERATION IN THIS AREA 
LIMITED BY R DS(on)

100μsec

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 5

            www.irf.com  

© 

2014 International Rectifier   

      

Submit  Datasheet Feedback                 

March 25, 2014

AUIRL2203N

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9.  Maximum Drain Current Vs.

Case Temperature

0.01

0.1

 1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t   / t
2. Peak T = P

x  Z

+ T

1

2

J

DM

thJC

C

P

t

t

DM

1

2

t  , Rectangular Pulse Duration (sec)

Ther

m

al

 R

esponse

(Z

        )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

V

DS

90%

10%
V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10a.  Switching Time Test Circuit

Fig 10b.  Switching Time Waveforms

25

50

75

100

125

150

175

0

20

40

60

80

100

120

T   , Case Temperature (  C)

I   , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

V

GS

+

-

V

DD

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 6

            www.irf.com  

© 

2014 International Rectifier   

         

Submit  Datasheet Feedback                

March 25, 2014

AUIRL2203N

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3

μF

50K

Ω

.2

μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 13b.  Gate Charge Test Circuit

Fig 13a.  Basic Gate Charge Waveform

Fig 12b.  Unclamped Inductive Waveforms

Fig 12a.  Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

Fig 12c.  Maximum Avalanche Energy

Vs. Drain Current

25

50

75

100

125

150

175

0

100

200

300

400

500

600

Starting T  , Junction Temperature (  C)

E

     ,

 S

ingl

e P

ul

se A

val

anche E

ner

gy (

m

J)

J

AS

°

ID

TOP

BOTTOM

24A 

42A 

60A 

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

V

GS

Q

G

Q

GS

Q

GD

V

G

Charge

V

GS

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 7

            www.irf.com  

© 

2014 International Rectifier   

      

Submit  Datasheet Feedback                 

March 25, 2014

AUIRL2203N

Fig 14. For N-channel 

HEXFET

®

 power MOSFETs

Peak Diode Recovery dv/dt Test Circuit

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple 

≤ 5%

Body Diode  Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = 

P.W.

Period

+

-

+

+

+

-

-

-

ƒ

„

‚

R

G

V

DD

•  dv/dt controlled by R

G

•  I

SD

 controlled by Duty Factor "D"

•  D.U.T. - Device Under Test

D.U.T

*

Circuit Layout Considerations

   •  Low Stray Inductance

   •  Ground Plane

   •  Low Leakage Inductance

      Current Transformer



*

  Reverse Polarity of D.U.T for P-Channel

V

GS

[    ]

[    ]

***

 V

GS

 = 5.0V for Logic Level and 3V Drive Devices

[          ] ***

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 8

            www.irf.com  

© 

2014 International Rectifier   

         

Submit  Datasheet Feedback                

March 25, 2014

AUIRL2203N

TO-220AB Part Marking Information

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

YWWA

XX    or    XX

Part Number

IR Logo

Lot Code

AUIRL2203N

Date Code

Y= Year

WW= Work Week

A= Automotive, Lead Free

TO-220AB Package Outline

Dimensions  are  shown  in  millimeters  (inches)

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 9

            www.irf.com  

© 

2014 International Rectifier   

      

Submit  Datasheet Feedback                 

March 25, 2014

AUIRL2203N

†      Qualification standards can be found at International Rectifier’s web site:  

http//www.irf.com/

††     Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††    Highest passing voltage

Qualification Information

Moisture Sensitivity Level

3L-TO-220    

N/A

RoHS Compliant

Yes

ESD

Machine Model

Class M3(+/- 400V )

†††

(per AEC-Q101-002)

Human Body Model

Class H1C(+/- 2000V )

†††

(per AEC-Q101-001)

Charged Device Model

Class C5(+/- 2000V )

†††

(per AEC-Q101-005)

Qualification Level

Automotive

(per AEC-Q101) 

††

Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/auirl2203n-html.html
background image

  

     

 10

            www.irf.com  

© 

2014 International Rectifier   

         

Submit  Datasheet Feedback                

March 25, 2014

AUIRL2203N

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty.  Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices.  Reproduction of this
information with alterations is an unfair and deceptive business practice.  IR is not responsible or liable for such
altered documentation.  Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice.  IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur.  Should Buyer purchase or use
IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International
Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent
regarding the design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible
for compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including
the designation “AU”.  Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

Maker
Infineon Technologies