INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-channel
C
Features
• Low V
CE (ON)
Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (I
LM
)
• Positive V
CE (ON)
Temperature Coefficient
• Soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead-Free,
RoHS Compliant
• Automotive Qualified *
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
G ate
C ollector
Em itter
TO-247AC
AUIRGP4066D1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted
and
still air conditions. Ambient temperature (T
A
) is 25
°C, unless otherwise specified.
V
CES
= 600V
I
C(Nominal)
= 75A
t
SC
≥ 5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.70V
TO-247AD
AUIRGP4066D1-E
G C
E
C
C
E
C
G
AUTOMOTIVE GRADE
AUIRGP4066D1
AUIRGP4066D1-E
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRGP4066D1
TO-247AC
Tube
25
AUIRGP4066D1
AUIRGP4066D1-E
TO-247AD
Tube
25
AUIRGP4066D1-E
Ordering Information
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25°C
Continuous Collector Current
140g
I
C
@ T
C
= 100°C
Continuous Collector Current
90
I
NOMINAL
Nominal Current
75
I
CM
Pulse Collector Current V
GE
= 15V
225
I
LM
Clamped Inductive Load Current V
GE
= 20V c
300
A
I
F NOMINAL
Diode Nominal Current
d
75
g
I
FM
Diode Maximum Forward Current d
300
V
GE
Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
P
D
@ T
C
= 25°C
Maximum Power Dissipation
454
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
227
T
J
Operating Junction and
-55 to +175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max. Units
R
θJC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) f
–––
–––
0.33
°C/W
R
θJC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)f
–––
–––
0.53
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
40
–––
*Qualification standards can be found at http://www.irf.com/
1
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May 02, 2013
2
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AUIRGP4066D1/AUIRGP4066D1-E
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100μH, R
G
= 50
Ω, tested in production
I
LM
≤
400A.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 120A. Package diode current
limit is120A. Note that current limitations arising from heating of the device leads may occur.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
V
GE
= 0V, I
C
= 200μA
f
ΔV
(B R)CES
/
ΔT
J
T emperature Coeff. of Breakdown Voltage
—
0.30
—
V/°C V
GE
= 0V, I
C
= 15mA (25°C-175°C)
—
1.70
2.1
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
d
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
2.0
—
V
I
C
= 75A, V
GE
= 15V, T
J
= 150°C
d
—
2.1
—
I
C
= 75A, V
GE
= 15V, T
J
= 175°C
d
V
GE(th)
Gate Threshold Voltage
4.0
—
6.5
V
V
CE
= V
GE
, I
C
= 2.1mA
ΔV
GE(th)
/ΔT J
Threshold Voltage temp. coefficient
—
-13
—
mV/°C V
CE
= V
GE
, I
C
= 20mA (25°C - 175°C)
gfe
Forward Transconductance
—
50
—
S
V
CE
= 50V, I
C
= 75A, PW = 25μs
I
CES
Collector-to-Emitter Leakage Current
—
3.0
200
μA
V
GE
= 0V, V
CE
= 600V
—
10
—
mA
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop
—
1.60
1.77
V
I
F
= 75A
—
1.54
—
I
F
= 75A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current
—
—
±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Q
g
Total Gate Charge (turn-on)
—
150
225
I
C
= 75A
Q
ge
Gate-to-Emitter Charge (turn-on)
—
40
60
nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on)
—
60
90
V
CC
= 400V
E
on
Turn-On Switching Loss
—
4240
5190
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss
—
2170
3060
μJ
R
G
= 10Ω, L = 100μH, T
J
= 25°C
E
total
Total Switching Loss
—
6410
8250
E nergy loss es include tail & diode reverse recovery
t
d(on)
Turn-On delay time
—
50
70
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time
—
80
100
ns
R
G
= 10
Ω, L = 100μH
t
d(off)
Turn-Off delay time
—
200
230
TJ = 25°C
t
f
Fall time
—
60
80
E
on
Turn-On Switching Loss
—
6210
—
I
C
= 75A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss
—
2815
—
μJ
R
G
=10Ω, L=100μH, T
J
= 175°C
E
total
Total Switching Loss
—
9025
—
E nergy loss es include tail & diode reverse recovery
t
d(on)
Turn-On delay time
—
45
—
I
C
= 75A, V
CC
= 400V, V
GE
=15V
t
r
Rise time
—
70
—
ns
R
G
=10Ω, L=100μH
t
d(off)
Turn-Off delay time
—
240
—
T
J
= 175°C
t
f
Fall time
—
80
—
C
ies
Input Capacitance
—
4470
—
V
GE
= 0V
C
oes
Output Capacitance
—
350
—
V
CC
= 30V
C
res
Reverse Transfer Capacitance
—
140
—
f = 1.0Mhz
T
J
= 175°C, I
C
= 300A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
CC
= 480V, Vp
600V
Rg = 10
Ω, V
GE
= +20V to 0V
SCSOA
Short Circuit Safe Operating Area
V
CC
= 400V, Vp
600V
Rg = 10Ω, V
GE
= +15V to 0V
Erec
Reverse Recovery Energy of the Diode
—
680
—
μJ
T
J
= 175°C
t
rr
Diode Reverse Recovery Time
—
240
—
ns
V
CC
= 400V, I
F
= 75A
I
rr
Peak Reverse Recovery Current
—
50
—
A
V
GE
= 15V, Rg = 10
Ω, L =100μH
Conditions
5
—
—
μs
pF
3
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AUIRGP4066D1/AUIRGP4066D1-E
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
Fig. 4 - Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp =
≤
60μs
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp =
≤
60μs
10
100
1000
VCE (V)
1
10
100
1000
I C
(
A
)
1
10
100
1000
VCE (V)
0.1
1
10
100
1000
I C
(
A
)
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1msec
0
2
4
6
8
10
VCE (V)
0
50
100
150
200
250
300
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
VCE (V)
0
50
100
150
200
250
300
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25
50
75
100
125
150
175
TC (°C)
0
100
200
300
400
500
P
to
t (
W
)
25
50
75
100
125
150
175
TC (°C)
0
25
50
75
100
125
150
I C
(
A
)
4
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AUIRGP4066D1/AUIRGP4066D1-E
Fig. 8 - Typ. Diode Forward Characteristics
tp =
≤
60μs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp =
≤
60μs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp =
≤
60μs
0.0
1.0
2.0
3.0
4.0
VF (V)
0
50
100
150
200
250
300
I F
(
A
)
-40°C
25°C
175°C
0
2
4
6
8
10
VCE (V)
0
50
100
150
200
250
300
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
ICE = 38A
ICE = 75A
ICE = 150A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
ICE = 38A
ICE = 75A
ICE = 150A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
ICE = 38A
ICE = 75A
ICE = 150A
4
6
8
10
12
14
16
18
VGE, Gate-to-Emitter Voltage (V)
0
50
100
150
200
250
300
I C
, C
ol
le
ct
or
-t
o-
E
m
itt
er
C
ur
re
nt
(
A
)
TJ = 175°C
TJ = 25°C
5
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AUIRGP4066D1/AUIRGP4066D1-E
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 100μH; V
CE
= 400V, R
G
= 10
Ω; V
GE
= 15V
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 175°C; L = 100μH; V
CE
= 400V, R
G
= 10
Ω; V
GE
= 15V
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 100μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
Fig. 16 - Typ. Switching Time vs. R
G
T
J
= 175°C; L = 100μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
Fig. 17 - Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18 - Typ. Diode I
RR
vs. R
G
T
J
= 175°C
0
25
50
75
100
125
150
IC (A)
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
E
ne
rg
y
(μ
J)
EOFF
EON
0
25
50
75
100
Rg (
Ω)
1000
3000
5000
7000
9000
11000
13000
15000
E
ne
rg
y
(μ
J)
EOFF
EON
0
20
40
60
80
100
120
RG (Ω)
10
100
1000
10000
S
w
ic
hi
ng
T
im
e
(n
s)
tR
tdOFF
tF
tdON
20
40
60
80
100 120
140 160
IF (A)
20
25
30
35
40
45
50
55
60
I R
R
(
A
)
RG = 100Ω
RG = 22Ω
RG = 10Ω
RG = 47Ω
0
50
100
150
IC (A)
10
100
1000
S
w
ic
hi
ng
T
im
e
(n
s)
tR
tdOFF
tF
tdON
0
20
40
60
80
100
RG (Ω)
25
30
35
40
45
50
55
I R
R
(
A
)
6
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AUIRGP4066D1/AUIRGP4066D1-E
Fig. 19 - Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; I
F
= 75A; T
J
= 175°C
Fig. 20 - Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 23 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge
vs. V
GE
I
CE
= 75A; L = 485μH
Fig. 21 - Typ. Diode E
RR
vs. I
F
T
J
= 175°C
Fig. 22 - V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
400
500
600
700
diF /dt (A/μs)
30
35
40
45
50
55
I R
R
(
A
)
25
75
125
175
IF (A)
500
1000
1500
2000
2500
3000
3500
E
ne
rg
y
(μ
J)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
0
100
200
300
400
500
VCE (V)
10
100
1000
10000
C
ap
ac
ita
nc
e
(p
F
)
Cies
Coes
Cres
8
10
12
14
16
18
VGE (V)
0
5
10
15
20
T
im
e
(
μs
)
0
200
400
600
800
C
ur
re
nt
(A
)
Tsc
Isc
0
20
40
60
80 100 120 140 160
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
, G
at
e-
to
-E
m
itt
er
V
ol
ta
ge
(
V
)
VCES = 400V
VCES = 300V
200
400
600
800
1000
diF /dt (A/μs)
2000
4000
6000
8000
10000
12000
14000
16000
18000
Q
R
R
(
μC
)
22Ω
10Ω
100Ω
47Ω
38A
75A
150A
7
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AUIRGP4066D1/AUIRGP4066D1-E
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i
/Ri
Ci=
τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τi (sec)
0.012 0.000034
0.163 0.000390
0.215 0.005990
0.139 0.033585
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i
/Ri
Ci=
τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τi (sec)
0.00738 0.000009
0.09441
0.000179
0.13424 0.002834
0.09294
0.0182
8
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AUIRGP4066D1/AUIRGP4066D1-E
1K
VC C
D UT
0
L
L
Rg
80 V
DUT
4 80V
DC
4x
DUT
360V
L
Rg
VCC
diode clamp /
DU T
DU T /
D RIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
C force
400μH
G force
DUT
D1
10K
C sense
0.0075μ
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
9
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AUIRGP4066D1/AUIRGP4066D1-E
Fig. WF3 - Typ. Diode Recovery Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ T
J
= 25°C using Fig. CT.3
-100
0
100
200
300
400
500
600
700
-3
0
3
6
9
12
Time (uS)
Vc
e (
V
)
-100
0
100
200
300
400
500
600
700
Ice
(
A
)
VCE
ICE
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
-0.20
0.00
0.20
0.40
0.60
0.80
time (μS)
V
F
(V
)
Peak I
RR
t
RR
Q
RR
-100
0
100
200
300
400
500
600
700
-0.4
-0.2
0
0.2
0.4
0.6
time(μs)
V
CE
(V
)
-20
0
20
40
60
80
100
120
140
I
CE
(A
)
90% I
CE
10% I
CE
Eoff Loss
tf
-100
0
100
200
300
400
500
600
700
-0.4
-0.2
0
0.2
0.4
0.6
time (μs)
V
CE
(V
)
-20
0
20
40
60
80
100
120
140
I
CE
(A
)
TEST
CURRENT
90% I
CE
10%
I
CE
tr
Eon Loss
10
www.irf.com
©
2013 International Rectifier
May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
TO-247AC package is not recommended for Surface Mount Application.
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUP4066D1
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/