AUIRFZ44N Product Datasheet

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AUIRFZ44N 

 V

DSS 

55V 

 R

DS(on)

   max. 

17.5m



 I

D  

49A  

Features 

  Advanced Planar Technology 

 Low 

On-Resistance 

  Dynamic dv/dt Rating 

  175°C Operating Temperature 
 Fast 

Switching 

  Fully Avalanche Rated 

  Repetitive Avalanche Allowed up to Tjmax 

  Lead-Free, RoHS Compliant 

  Automotive Qualified *  

Description 
Specifically designed for Automotive applications, this Stripe 
Planar design of HEXFET® Power MOSFETs utilizes the latest 
processing techniques to achieve low on-resistance per silicon 
area. This benefit combined with the fast switching speed and 
ruggedized device design that HEXFET power MOSFETs are 
well known for, provides the designer with an extremely efficient 
and reliable device for use in Automotive and a wide variety of 
other applications. 

                          

2017-09-25 

HEXFET® is a registered trademark of Infineon. 
*Qualification standards can be found at 

www.infineon.com

 

 

AUTOMOTIVE GRADE 

Symbol Parameter 

Max. 

Units 

I

D

 @ T

C

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V  

49 

I

D

 @ T

C

 = 100°C 

Continuous Drain Current, V

GS

 @ 10V  

35 

I

DM 

Pulsed Drain Current  160 

P

D

 @T

C

 = 25°C 

Power Dissipation   

94 

  

Linear Derating Factor 

0.63 

W/°C 

V

GS 

Gate-to-Source Voltage 

 ± 20 

E

AS  

Single Pulse Avalanche Energy (Thermally Limited)  150 

mJ   

E

AS 

(Tested) 

Single Pulse Avalanche Energy  Tested Value  530 

I

AR 

Avalanche Current  25 

E

AR 

Repetitive Avalanche Energy  9.4 

mJ 

T

J  

Operating Junction and 

-55  to + 175 

 

T

STG 

Storage Temperature Range 

  

°C 

  

Soldering Temperature, for 10 seconds (1.6mm from case) 

300 

 

 

Mounting torque, 6-32 or M3 screw 

10 lbf•in (1.1N•m) 

   

dv/dt 

Peak Diode Recovery dv/dt 5.0 

V/ns 

Absolute Maximum Ratings 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress 
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not 
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance 
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless 
otherwise specified. 

Thermal Resistance  

Symbol Parameter 

Typ. 

Max. 

Units 

R

JC

  

Junction-to-Case  

––– 

1.5 

°C/W   

R

CS

 

Case-to-Sink, Flat, Greased Surface  

0.50 

––– 

R

JA

  

Junction-to-Ambient  

––– 

62 

TO-220AB 

AUIRFZ44N 

Base part number 

Package Type 

Standard Pack 

Form 

Quantity 

AUIRFZ44N 

TO-220 

Tube 

50 

AUIRFZ44N 

Orderable Part Number   

G D S 

Gate Drain Source 

HEXFET

® 

Power MOSFET 

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AUIRFZ44N 

 

2017-09-25 

Notes:

 Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

   Starting  T

J

 = 25°C, L = 0.48mH, R

G

 = 25

, I

AS

 = 25A (See fig. 12) 

   I

SD

 

 25A, di/dt   230A/µs, V

DD

 

  V

(BR)DSS

, T

J

 

 175°C  

 Pulse width 

 400µs; duty cycle  2%.  

  This is a typical value at device destruction and represents operation outside rated limits. 

  This is a calculated value limited to T

J

 = 175°C . 

 

 

Static @ T

J

 = 25°C (unless otherwise specified) 

  

Parameter Min. 

Typ. 

Max. 

Units 

Conditions 

V

(BR)DSS 

Drain-to-Source Breakdown Voltage 

55 

–––  ––– 

V  V

GS

 = 0V, I

D

 = 250µA 

V

(BR)DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

–––  0.058  –––  V/°C  Reference to 25°C, I

D

 = 1mA  

R

DS(on) 

  

Static Drain-to-Source On-Resistance   

––– 

–––  17.5  m

 V

GS

 = 10V, I

D

 = 25A 

V

GS(th) 

Gate Threshold Voltage 

2.0 

––– 

4.0 

V  V

DS

 = V

GS

, I

D

 = 250µA 

gfs 

Forward Trans conductance 

19 

–––  ––– 

S  V

DS

 = 25V, I

D

 = 25A  

I

DSS 

  

Drain-to-Source Leakage Current   

––– –––  25 

µA 

V

DS

 =55 V, V

GS

 = 0V 

––– ––– 250 

V

DS

 =44V,V

GS

 = 0V,T

J

 =150°C 

I

GSS 

  

Gate-to-Source Forward Leakage 

––– 

–––  100 

nA 

V

GS

 = 20V 

Gate-to-Source Reverse Leakage 

––– 

–––  -100 

V

GS

 = -20V 

Dynamic  Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified) 

Q

Total Gate Charge  

––– 

––– 

63 

nC  

I

D

 = 25A  

Q

gs 

Gate-to-Source Charge 

––– 

––– 

14 

V

DS

 = 44V 

Q

gd 

Gate-to-Drain Charge 

––– 

––– 

23 

V

GS

 = 10V , See Fig. 6 and 13 

t

d(on) 

Turn-On Delay Time 

––– 

12 

––– 

ns 

V

DD

 = 28V 

t

Rise Time 

––– 

60 

––– 

I

D

 = 25A  

t

d(off) 

Turn-Off Delay Time 

––– 

44 

––– 

R

G

= 12



t

Fall Time 

––– 

45 

––– 

V

GS

 = 10V, See Fig. 10  

L

D

 

Internal Drain Inductance 

––– 

4.5 

––– 

 nH  

Between lead, 
6mm (0.25in.) 

L

S

 

Internal Source Inductance 

––– 

7.5 

––– 

from package 
and center of die contact 

C

iss 

Input Capacitance 

–––  1470  ––– 

V

GS

 = 0V 

C

oss 

Output Capacitance 

––– 

360  ––– 

V

DS

 = 25V 

C

rss 

Reverse Transfer Capacitance 

––– 

88 

––– 

ƒ = 1.0MHz, See Fig. 5 

E

As 

Single pulse Avalanche Energy 

–––  530 150 mJ I

AS

 = 25A, L = 0.47mH  

Diode Characteristics  

  

        Parameter 

Min.  Typ.  Max.  Units 

Conditions 

I

  

Continuous Source Current  

––– –––  49 

MOSFET symbol 

(Body Diode) 

showing  the 

I

SM 

  

Pulsed Source Current 

––– ––– 160 

integral reverse 

(Body Diode)

p-n junction diode. 

V

SD 

Diode Forward Voltage 

––– 

––– 

1.3 

V  T

J

 = 25°C,I

= 25A ,V

GS

 = 0V 

t

rr  

Reverse Recovery Time  

––– 

63 

95 

ns   T

J

 = 25°C ,I

F

 = 25A 

Q

rr  

Reverse Recovery Charge  

––– 

170  260 

nC    di/dt = 100A/µs 

t

on 

Forward Turn-On Time 

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

pF   

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AUIRFZ44N 

 

2017-09-25 

Fig. 2 Typical Output Characteristics 

Fig. 3 

Typical Transfer Characteristics

 

 

Fig. 4  Normalized On-Resistance 

Vs. Temperature 

Fig. 1 Typical Output Characteristics 

 1

 10

 100

 1000

0.1

 1

 10

 100

 

20µs PULSE WIDTH

T  = 25 C

J

°

 

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V     , Drain-to-Source Voltage (V)

I   ,  

Dr

ai

n-to

-S

ou

rc

e Cu

rre

nt (A

)

DS

D

4.5V

 1

 10

 100

 1000

0.1

 1

 10

 100

 

20µs PULSE WIDTH

T  = 175 C

J

°

 

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V     , Drain-to-Source Voltage (V)

I   

,  Dra

in-to

-So

urc

C

urr

en

t (A

)

DS

D

4.5V

 1

 10

 100

 1000

4

5

6

7

8

9

10

11

 

V      = 25V
20µs PULSE WIDTH

DS

V     , Gate-to-Source Voltage (V)

I   ,  D

rain

-to

-S

ou

rc

e C

urre

nt

 (A

)

GS

D

 

T  = 25  C

J

°

 

T  = 175  C

J

°

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T  , Junction Temperature

(  C)

R

   

   

   

   

, D

ra

in

-to

-S

ou

rc

e O

n R

es

is

ta

nc

e

(N

or

m

al

iz

ed

)

J

D

S

(on)

°

 

 

V

=

I =

GS

D

10V

49A

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AUIRFZ44N 

 

2017-09-25 

Fig 5.  Typical Capacitance vs.  
 

      Drain-to-Source Voltage

 

Fig 6.  Typical Gate Charge vs. 
 

      Gate-to-Source Voltage

 

 

 

Fig 8.  Maximum Safe Operating Area  

Fig. 7. Typical Source-to-Drain Diode 

 Forward Voltage 

 1

 10

 100

0

500

1000

1500

2000

2500

V     , Drain-to-Source Voltage (V)

C

, C

apa

ci

ta

nc

(pF

)

DS

 

V

C
C
C

=

=
=
=

0V,

C
C
C

f = 1MHz

+ C

+ C

C      SHORTED

GS
iss

gs

gd ,

ds

rss

gd

oss

ds

gd

 

C

iss

 

C

oss

 

C

rss

0

10

20

30

40

50

60

70

0

4

8

12

16

20

Q   , Total Gate Charge (nC)

V

     , G

ate

-to

-S

ou

rc

e V

ol

ta

ge

 (

V

)

G

GS

 

I =

D

25A

 

V

= 11V

DS

V

= 27V

DS

V

= 44V

DS

0.1

 1

 10

 100

 1000

0.0

0.6

1.2

1.8

2.4

V     ,Source-to-Drain Voltage (V)

I  

   ,

 Re

ve

rs

D

ra

in 

C

urr

en

t (

A

)

SD

SD

 

V      = 0 V 

GS

 

T  = 25  C

J

°

 

T  = 175  C

J

°

1

10

100

VDS  , Drain-toSource Voltage (V)

0.1

1

10

100

1000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C
Tj = 175°C
Single Pulse

1msec

10msec

OPERATION IN THIS AREA 
LIMITED BY R DS(on)

100µsec

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AUIRFZ44N 

 

2017-09-25 

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case  

Fig 9.  Maximum Drain Current vs. Case Temperature 

Fig 10a.  Switching Time Test Circuit 

25

50

75

100

125

150

175

0

10

20

30

40

50

T   , Case Temperature (  C)

I  

 , D

rain

 Cu

rren

t (A)

°

C

D

Fig 10b.   Switching Time Waveforms 

0.01

0.1

 1

 10

0.00001

0.0001

0.001

0.01

0.1

 

Notes:

1. Duty factor D =

t   / t

2. Peak T

= P

x  Z

+ T

1

2

J

DM

thJC

C

 

P

t

t

DM

1

2

t  , Rectangular Pulse Duration (sec)

Th

er

m

a

l Res

p

o

n

se

(Z

     

   )

1

th

JC

0.01

0.02

0.05

0.10

0.20

D = 0.50

 

SINGLE PULSE

(THERMAL RESPONSE)

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AUIRFZ44N 

 

2017-09-25 

 

Fig 12c. Maximum Avalanche Energy 

 vs. Drain Current 

Fig 12a.  Unclamped Inductive Test Circuit 

Fig 12b.  Unclamped Inductive Waveforms 

R G

IAS

0.01

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

tp

V

(BR)DSS

I

AS

Fig 13b.  Gate Charge Test Circuit 

Fig 13a.   Gate Charge Waveform 

25

50

75

100

125

150

175

0

60

120

180

240

300

Starting T  , Junction Temperature

(  C)

  

  ,

 S

in

g

le

 P

u

ls

Ava

la

n

ch

En

e

rg

(mJ

)

J

AS

°

 

ID

TOP

BOTTOM

10A 
18A 
25A 

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AUIRFZ44N 

 

2017-09-25 

 

Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

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AUIRFZ44N 

 

2017-09-25 

 

 

TO-220AB  package is not recommended for Surface Mount Application. 

TO-220AB Part Marking Information 

YWWA 

XX    

    XX 

Date Code 

Y= Year 

WW= Work Week 

AUIRFZ44N 

Lot Code 

Part Number 

IR Logo 

TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) 

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AUIRFZ44N 

 

2017-09-25 

 

Qualification Information  

Qualification Level 

Automotive 

(per AEC-Q101)  

Comments: This part number(s) passed Automotive qualification. Infineon’s  
Industrial and Consumer qualification level is granted by extension of the higher 
Automotive level. 

 Moisture Sensitivity Level   

3L-TO-220AB 

N/A 

ESD 

Machine Model  

Class M3 (+/- 400V)

 

 

AEC-Q101-002 

Human Body Model  

Class H1C (+/- 1250V)

 

 

AEC-Q101-001 

Charged Device Model 

Class C5 (+/- 1250V)

 

 

AEC-Q101-005 

RoHS Compliant 

Yes 

Published by 
Infineon Technologies AG 
81726 München, Germany 

© 

Infineon Technologies AG 2015 

All Rights Reserved. 
 
IMPORTANT NOTICE
 
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics 
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any 
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and 
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third 
party.  
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this 
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of 
the product of Infineon Technologies in customer’s applications.  
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of 
customer’s technical departments to evaluate the suitability of the product for the intended application and the 
completeness of the product information given in this document with respect to such application.   
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest 
Infineon Technologies office (

www.infineon.com

). 

WARNINGS 
Due to technical requirements products may contain dangerous substances. For information on the types in question 
please contact your nearest Infineon Technologies office. 
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized 
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a 
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.  

Revision History  

Date Comments 

9/25/2017 



Updated datasheet with corporate template. 



Corrected typo error on package outline and part marking on page 8. 

†  Highest passing voltage. 

Maker
Infineon Technologies
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