AUIRFZ44N
V
DSS
55V
R
DS(on)
max.
17.5m
I
D
49A
Features
Advanced Planar Technology
Low
On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast
Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1
2017-09-25
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
49
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
35
I
DM
Pulsed Drain Current 160
P
D
@T
C
= 25°C
Power Dissipation
94
W
Linear Derating Factor
0.63
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 150
mJ
E
AS
(Tested)
Single Pulse Avalanche Energy Tested Value 530
I
AR
Avalanche Current 25
A
E
AR
Repetitive Avalanche Energy 9.4
mJ
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
dv/dt
Peak Diode Recovery dv/dt 5.0
V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
–––
1.5
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
–––
R
JA
Junction-to-Ambient
–––
62
TO-220AB
AUIRFZ44N
S
D
G
Base part number
Package Type
Standard Pack
Form
Quantity
AUIRFZ44N
TO-220
Tube
50
AUIRFZ44N
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
AUIRFZ44N
2
2017-09-25
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 0.48mH, R
G
= 25
, I
AS
= 25A (See fig. 12)
I
SD
25A, di/dt 230A/µs, V
DD
V
(BR)DSS
, T
J
175°C
Pulse width
400µs; duty cycle 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
––– –––
V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.058 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
––– 17.5 m
V
GS
= 10V, I
D
= 25A
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
19
––– –––
S V
DS
= 25V, I
D
= 25A
I
DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V
DS
=55 V, V
GS
= 0V
––– ––– 250
V
DS
=44V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
––– -100
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
–––
63
nC
I
D
= 25A
Q
gs
Gate-to-Source Charge
–––
–––
14
V
DS
= 44V
Q
gd
Gate-to-Drain Charge
–––
–––
23
V
GS
= 10V , See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
–––
12
–––
ns
V
DD
= 28V
t
r
Rise Time
–––
60
–––
I
D
= 25A
t
d(off)
Turn-Off Delay Time
–––
44
–––
R
G
= 12
t
f
Fall Time
–––
45
–––
V
GS
= 10V, See Fig. 10
L
D
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
––– 1470 –––
V
GS
= 0V
C
oss
Output Capacitance
–––
360 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
–––
88
–––
ƒ = 1.0MHz, See Fig. 5
E
As
Single pulse Avalanche Energy
––– 530 150 mJ I
AS
= 25A, L = 0.47mH
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 49
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 160
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.3
V T
J
= 25°C,I
S
= 25A ,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
63
95
ns T
J
= 25°C ,I
F
= 25A
Q
rr
Reverse Recovery Charge
–––
170 260
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
pF
AUIRFZ44N
3
2017-09-25
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
Vs. Temperature
Fig. 1 Typical Output Characteristics
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I ,
Dr
ai
n-to
-S
ou
rc
e Cu
rre
nt (A
)
DS
D
4.5V
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I
, Dra
in-to
-So
urc
e
C
urr
en
t (A
)
DS
D
4.5V
1
10
100
1000
4
5
6
7
8
9
10
11
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
rain
-to
-S
ou
rc
e C
urre
nt
(A
)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature
( C)
R
, D
ra
in
-to
-S
ou
rc
e O
n R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
J
D
S
(on)
°
V
=
I =
GS
D
10V
49A
AUIRFZ44N
4
2017-09-25
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7. Typical Source-to-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
V , Drain-to-Source Voltage (V)
C
, C
apa
ci
ta
nc
e
(pF
)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
70
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
, G
ate
-to
-S
ou
rc
e V
ol
ta
ge
(
V
)
G
GS
I =
D
25A
V
= 11V
DS
V
= 27V
DS
V
= 44V
DS
0.1
1
10
100
1000
0.0
0.6
1.2
1.8
2.4
V ,Source-to-Drain Voltage (V)
I
,
Re
ve
rs
e
D
ra
in
C
urr
en
t (
A
)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
AUIRFZ44N
5
2017-09-25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
175
0
10
20
30
40
50
T , Case Temperature ( C)
I
, D
rain
Cu
rren
t (A)
°
C
D
Fig 10b. Switching Time Waveforms
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Th
er
m
a
l Res
p
o
n
se
(Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRFZ44N
6
2017-09-25
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
R G
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
25
50
75
100
125
150
175
0
60
120
180
240
300
Starting T , Junction Temperature
( C)
E
,
S
in
g
le
P
u
ls
e
Ava
la
n
ch
e
En
e
rg
y
(mJ
)
J
AS
°
ID
TOP
BOTTOM
10A
18A
25A
AUIRFZ44N
7
2017-09-25
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRFZ44N
8
2017-09-25
TO-220AB package is not recommended for Surface Mount Application.
TO-220AB Part Marking Information
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUIRFZ44N
Lot Code
Part Number
IR Logo
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
AUIRFZ44N
9
2017-09-25
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
3L-TO-220AB
N/A
ESD
Machine Model
Class M3 (+/- 400V)
†
AEC-Q101-002
Human Body Model
Class H1C (+/- 1250V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1250V)
†
AEC-Q101-005
RoHS Compliant
Yes
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/25/2017
Updated datasheet with corporate template.
Corrected typo error on package outline and part marking on page 8.
† Highest passing voltage.