AUIRFZ24NS
AUIRFZ24NL
V
DSS
55V
R
DS(on)
max.
0.07
I
D
17A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low
On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast
Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
1
2017-10-13
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
17
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
12
I
DM
Pulsed Drain Current 68
P
D
@T
A
= 25°C
Maximum Power Dissipation
3.8
P
D
@T
C
= 25°C
Maximum Power Dissipation
45
Linear Derating Factor
0.3
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 71
mJ
I
AR
Avalanche Current 10
A
E
AR
Repetitive Avalanche Energy 4.5
mJ
dv/dt Peak
Diode
Recovery
6.8
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
W
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
–––
3.3
°C/W
R
JA
Junction-to-Ambient (PCB Mount), D
2
Pak –––
40
D
2
-Pak
AUIRFZ24NS
TO-262
AUIRFZ24NL
S
D
G
S
D
G
D
Base part number
Package Type
Standard Pack
Form
Quantity
AUIRFZ24NL
TO-262
Tube
50
AUIRFZ24NL
AUIRFZ24NS
D
2
-Pak
Tube
50
AUIRFZ24NS
Tape and Reel Left
800
AUIRFZ24NSTRL
Orderable Part Number
G D S
Gate Drain
Source
HEXFET
®
Power MOSFET
AUIRFZ24NS/L
2
2017-10-13
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 1.0mH, R
G
= 25
, I
AS
= 10A, V
GS
=10V. (See fig.12)
I
SD
10A, di/dt 280A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
––– –––
V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.07
V
GS
= 10V, I
D
= 10A
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
4.5
––– –––
S V
DS
= 25V, I
D
= 10A
I
DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250
V
DS
= 44V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
––– -100
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
–––
20
nC
I
D
= 10A
Q
gs
Gate-to-Source Charge
–––
–––
5.3
V
DS
= 44V
Q
gd
Gate-to-Drain Charge
–––
–––
7.6
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
–––
4.9
–––
ns
V
DD
= 28V
t
r
Rise Time
–––
34
–––
I
D
= 10A
t
d(off)
Turn-Off Delay Time
–––
19
–––
R
G
= 24
t
f
Fall Time
–––
27
–––
R
D
= 2.6
, See Fig. 10
L
S
Internal Source Inductance
–––
7.5
––– nH
Between lead,
and center of die contact
C
iss
Input Capacitance
–––
370 –––
V
GS
= 0V
C
oss
Output Capacitance
–––
140 –––
pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance
–––
65
–––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 17
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 68
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.3
V T
J
= 25°C,I
S
= 10A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
56
83
ns T
J
= 25°C ,I
F
= 10A
Q
rr
Reverse Recovery Charge
–––
120 180
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRFZ24NS/L
3
2017-10-13
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig. 4
Normalized On-Resistance vs. Temperature
1
10
100
4
5
6
7
8
9
10
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I
,
Dr
ain-t
o
-S
ou
rc
e C
u
rr
e
n
t (
A
)
T = 175°C
J
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
J
T , Junction Temperature (°C)
R
, Dra
in
-to
-S
ou
rc
e On
Re
si
st
an
ce
DS
(o
n)
(N
orm
al
ized
)
V = 10V
GS
A
I = 17A
D
AUIRFZ24NS/L
4
2017-10-13
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
0
100
200
300
400
500
600
700
1
10
100
C, Ca
pa
ci
ta
nc
e
(pF
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
V
,
G
at
e-
to-
S
ou
rc
e
V
ol
tag
e
(V
)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 10A
DS
DS
D
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
,
Rev
ers
e Dra
in C
urren
t (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)
DS
I
,
D
ra
in
C
urre
nt
(A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
AUIRFZ24NS/L
5
2017-10-13
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
175
0
4
8
12
16
20
T , Case Temperature ( C)
I , Dr
ai
n C
ur
ren
t (
A
)
°
C
D
AUIRFZ24NS/L
6
2017-10-13
Fig 12c. Maximum Avalanche Energy vs. Drain Current
R G
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13b. Gate Charge Waveform
0
20
40
60
80
100
120
140
25
50
75
100
125
150
175
J
E
,
S
in
gle
Pu
ls
e Av
al
an
ch
e
E
ne
rg
y (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 4.2A
7.2A
BOTTOM 10A
V = 25V
D
DD
AUIRFZ24NS/L
7
2017-10-13
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRFZ24NS/L
8
2017-10-13
D
2
- Pak (TO-263AB) Part Marking Information
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUIRFZ24NS
Lot Code
Part Number
IR Logo
D
2
- Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
AUIRFZ24NS/L
9
2017-10-13
TO-262 Part Marking Information
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUIRFZ24NL
Lot Code
Part Number
IR Logo
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
AUIRFZ24NS/L
10
2017-10-13
D
2
- Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.