AUIRFS3006 Product Datasheet

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background image

 

AUIRFS3006 

V

DSS 

60V 

R

DS(on)

   typ. 

2.0m

 

              max. 

2.5m

 

I

D (Silicon Limited) 

270A 

I

D (Package Limited) 

195A  

Absolute Maximum Ratings 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress 
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not 
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance 
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless 

Features 

  Advanced Process Technology 

  Ultra Low On-Resistance 

  Dynamic dv/dt Rating 

  175°C Operating Temperature 
 Fast Switching 

  Repetitive Avalanche Allowed up to Tjmax 

  Lead-Free, RoHS Compliant 

  Automotive Qualified *  

Description 
Specifically designed for Automotive applications, this HEXFET® 
Power MOSFET utilizes the latest processing techniques to achieve 
extremely low on-resistance per silicon area.  Additional features of 
this design  are a 175°C junction operating temperature, fast 
switching speed and improved repetitive avalanche rating . These 
features combine to make this design an extremely efficient and 
reliable device for use in Automotive applications and a wide variety 
of other applications 

 

2015-12-2 

HEXFET® is a registered trademark of Infineon. 
*Qualification standards can be found at 

www.infineon.com

 

 

AUTOMOTIVE GRADE 

Symbol Parameter 

Max. 

Units 

I

D

 @ T

C

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V (Silicon Limited) 

270 

I

D

 @ T

C

 = 100°C 

Continuous Drain Current, V

GS

 @ 10V (Silicon Limited) 

191 

I

D

 @ T

C

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V (Package Limited) 

195 

I

DM 

Pulsed Drain Current  1080 

P

D

 @T

C

 = 25°C 

Maximum Power Dissipation   

375 

  

Linear Derating Factor 

2.5 

W/°C 

V

GS 

Gate-to-Source Voltage 

 ± 20 

E

AS  

Single Pulse Avalanche Energy (Thermally Limited)  320 

mJ 

I

AR 

Avalanche Current  

See Fig.14,15, 22a, 22b   

E

AR 

Repetitive Avalanche Energy  

 

mJ 

dv/dt Peak 

Diode 

Recovery 

 10 

V/ns 

T

J  

Operating Junction and 

-55  to + 175 

 

T

STG 

Storage Temperature Range 

  

°C 

  

Soldering Temperature, for 10 seconds (1.6mm from case) 

300 

 

Thermal Resistance  

Symbol Parameter 

Typ. 

Max. 

Units 

R

JC

  

Junction-to-Case  ––– 

0.40 

°C/W   

R

JA

  

Junction-to-Ambient (PCB Mount), D

Pak ––– 

40 

D

2

Pak 

AUIRFS3006 

Base part number 

Package Type 

Standard Pack 

Orderable Part Number   

Form 

Quantity 

AUIRFS3006  

D

2

-Pak    

Tube  

50 

AUIRFS3006 

Tape and Reel Left  

800 

AUIRFS3006TRL 

G D S 

Gate Drain 

Source 

HEXFET

® 

Power MOSFET 

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AUIRFS3006 

 

2015-12-2 

Notes:

  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that 

 

current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 

  Repetitive rating;  pulse width limited by max. junction temperature. 

  Limited by T

Jmax, 

starting  T

J

 = 25°C, L = 0.022mH, R

G

 = 25

, I

AS

 = 170A, V

GS

 =10V. Part not recommended for use above this value.  

  I

SD

 

170A, di/dt 1360A/µs, V

DD

 

V

(BR)DSS

, T

J

 

 175°C. 

 Pulse width 

400µs; duty cycle  2%. 

  C

oss

 eff. (TR) is a fixed capacitance that gives the same charging time as C

oss

 while V

DS

 is rising from 0 to 80% V

DSS

  C

oss 

eff. (ER) is a fixed capacitance that gives the same energy as C

oss

 while V

DS

 is rising from 0 to 80% V

DSS

  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to  

 

application note #AN-994  

  R

 is measured at T

J

 approximately 90°C. 



R

JC

 value shown is at time zero 

Static @ T

J

 = 25°C (unless otherwise specified) 

  

Parameter Min. 

Typ. 

Max. 

Units 

Conditions 

V

(BR)DSS 

Drain-to-Source Breakdown Voltage 

40 

–––  ––– 

V  V

GS

 = 0V, I

D

 = 250µA 

V

(BR)DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

–––  0.07  –––  V/°C  Reference to 25°C, I

D

 = 5mA  

R

DS(on) 

  

Static Drain-to-Source On-Resistance   

––– 

2.0 

2.5 

m

 V

GS

 = 10V, I

D

 = 170A 

V

GS(th) 

Gate Threshold Voltage 

2.0  

––– 

4.0 

V  V

DS

 = V

GS

, I

D

 = 250µA 

gfs 

Forward Trans conductance 

280 

–––  ––– 

S  V

DS

 = 25V, I

D

 = 170A 

R

Gate Resistance 

––– 

2.0 

––– 

  

I

DSS 

  

Drain-to-Source Leakage Current   

––– –––  20 

µA 

V

DS

 = 60V, V

GS

 = 0V 

––– ––– 250 

V

DS

 = 48V,V

GS

 = 0V,T

J

 =125°C 

I

GSS 

  

Gate-to-Source Forward Leakage 

––– 

–––  100 

nA  

V

GS

 = 20V 

 

Gate-to-Source Reverse Leakage 

––– 

–––  -100 

V

GS

 = -20V 

Dynamic  Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified) 

Q

Total Gate Charge  

––– 

200  300 

nC  

I

D

 = 170A 

Q

gs 

Gate-to-Source Charge 

––– 

37 

––– 

V

DS

 = 30V 

Q

gd 

Gate-to-Drain Charge 

––– 

60 

––– 

V

GS

 = 10V 

Q

sync 

Total Gate Charge Sync. (Q

- Q

gd

) ––– 

140 

––– 

 

t

d(on) 

Turn-On Delay Time 

––– 

16 

––– 

ns 

V

DD

 = 39V 

t

Rise Time 

––– 

182  ––– 

I

D

 = 170A 

t

d(off) 

Turn-Off Delay Time 

––– 

118  ––– 

R

G

= 2.7



t

Fall Time 

––– 

189  ––– 

V

GS

 = 10V 

C

iss 

Input Capacitance 

–––  8970  ––– 

pF  

V

GS

 = 0V 

C

oss 

Output Capacitance 

–––  1020  ––– 

V

DS

 = 50V 

C

rss 

Reverse Transfer Capacitance 

––– 

534  ––– 

ƒ = 1.0MHz, See Fig. 5 

C

oss eff.(ER) 

Effective Output Capacitance (Energy Related)  –––  1480  ––– 

V

GS

 = 0V, V

DS

 = 0V to 48V  

C

oss eff.(TR) 

Effective Output Capacitance (Time Related) 

–––  1920  ––– 

V

GS

 = 0V, V

DS

 = 0V to 48V  

Diode Characteristics  

  

        Parameter 

Min.  Typ.  Max.  Units 

Conditions 

I

  

Continuous Source Current  

––– ––– 270 

MOSFET symbol 

(Body Diode) 

showing  the 

I

SM 

  

Pulsed Source Current 

––– ––– 1080 

integral reverse 

(Body Diode)

p-n junction diode. 

V

SD 

Diode Forward Voltage 

––– 

––– 

1.3 

V  T

J

 = 25°C,I

= 170A,V

GS

 = 0V 

t

rr  

Reverse Recovery Time  

––– 44 ––– 

ns  

T

J

 = 25°C          V

DD

 = 51V 

––– 48 ––– 

T

J

 = 125°C         I

F

 = 170A,  

Q

rr  

Reverse Recovery Charge  

––– 63 ––– 

nC  

 T

J

 = 25°C     di/dt = 100A/µs 

––– 77 ––– 

T

J

 = 125°C          

I

RRM 

Reverse Recovery Current 

––– 

2.4 

––– 

A  T

J

 = 25°C     

t

on 

Forward Turn-On Time 

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

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AUIRFS3006 

 

2015-12-2 

Fig. 2 Typical Output Characteristics 

Fig. 3 

Typical Transfer Characteristics

 

 

Fig. 4 

Normalized On-Resistance vs. Temperature

 

 

Fig. 1 Typical Output Characteristics 

Fig 5.  Typical Capacitance vs. Drain-to-Source Voltage

 

Fig 6.  Typical Gate Charge vs. Gate-to-Source Voltage

 

 

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

 60µs PULSE WIDTH

Tj = 25°C

3.5V

VGS

TOP           15V

10V

8.0V

6.0V

5.0V

4.5V

4.0V

BOTTOM

3.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

 60µs PULSE WIDTH

Tj = 175°C

3.5V

VGS

TOP           15V

10V

8.0V

6.0V

5.0V

4.5V

4.0V

BOTTOM

3.5V

2.0

3.0

4.0

5.0

6.0

7.0

VGS, Gate-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 

)

VDS = 25V

 60µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(o

n)

 , 

D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 170A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

0

4000

8000

12000

16000

C

, C

ap

ac

ita

nc

(p

F

)

VGS   = 0V,       f = 1 MHZ

Ciss    = Cgs + Cgd,  C ds SHORTED
Crss    = Cgd 
Coss   = Cds + Cgd

Coss

Crss

Ciss

0

40

80

120

160

200

240

280

 QG  Total Gate Charge (nC)

0

4

8

12

16

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 48V

VDS= 30V

ID= 170A

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AUIRFS3006 

 

2015-12-2 

 

Fig 8.  Maximum Safe Operating Area  

Fig 10.  Drain-to-Source Breakdown Voltage 

Fig 11.  Typical C

OSS

 Stored Energy 

Fig 12. Maximum Avalanche Energy vs. Drain Current 

Fig. 7 Typical Source-to-Drain Diode 

Fig 9.  Maximum Drain Current vs. Case Temperature 

0.0

0.4

0.8

1.2

1.6

2.0

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I S

D

R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 175°C

VGS = 0V

0.1

1

10

100

VDS, Drain-toSource Voltage (V)

0.1

1

10

100

1000

10000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA 

LIMITED BY R DS(on)

100µsec

DC

LIMITED BY PACKAGE

25

50

75

100

125

150

175

 TC , Case Temperature (°C)

0

50

100

150

200

250

300

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

Limited By Package

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

55

60

65

70

75

80

V

(B

R

)D

S

S

 ,

 D

ra

in

-t

o-

S

ou

rc

B

re

ak

do

w

V

ol

ta

ge

ID = 5mA

0

10

20

30

40

50

60

VDS, Drain-to-Source Voltage (V)

0.0

0.5

1.0

1.5

2.0

E

ne

rg

J)

25

50

75

100

125

150

175

Starting TJ, Junction Temperature (°C)

0

200

400

600

800

1000

1200

1400

E

A

S

S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

                 ID

TOP  

       20A

               27A

BOTTOM 

  170A

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AUIRFS3006 

 

2015-12-2 

 

Fig 14.   Avalanche Current vs. Pulse width  

Fig 13.  Maximum Effective Transient Thermal Impedance, Junction-to-Case  

Fig 15.  Maximum Avalanche Energy vs. Temperature 

Notes on Repetitive Avalanche Curves , Figures 14, 15: 
(For further info, see AN-1005 at www.infineon.com)
 
1.  Avalanche failures assumption:  
 

Purely a thermal phenomenon and failure occurs at a temperature far in  

 

excess of T

jmax

. This is validated for every part type. 

2.  Safe operation in Avalanche is allowed as long as T

jmax

 is not exceeded. 

3.   Equation below based on circuit and waveforms shown in Figures 18a, 18b. 
4.   P

D (ave) 

= Average power dissipation per single avalanche pulse. 

5.   BV = Rated breakdown voltage (1.3 factor accounts for voltage increase  
 during 

avalanche). 

6.   I

av 

= Allowable avalanche current. 

7. 

T

 = 

Allowable rise in junction temperature, not to exceed

 

T

jmax 

(assumed as  

 

25°C in Figure 13, 14).  

 

t

av = 

Average time in avalanche. 

 

D = Duty cycle in avalanche =  t

av 

·f 

 

Z

thJC

(D, t

av

) = Transient thermal resistance, see Figures 13) 

 

P

D (ave)

 = 1/2 ( 1.3·BV·I

av

) = 

T/ Z

thJC

 

I

av

 = 2

T/ [1.3·BV·Z

th

E

AS (AR) 

= P

D (ave)

·t

av

 

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

T

he

rm

al

 R

es

po

ns

Z  

th

JC

 )

0.20

0.10

D = 0.50

0.02
0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) 

I (sec)

0.175365 

0.000343 

0.22547 

0.006073 

J

J

1

1

2

2

R

1

R

1

R

2

R

2

C

Ci= 

iRi

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

1

10

100

1000

A

va

la

nc

he

 C

ur

re

nt

 (

A

)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 

 j = 25°C and 

Tstart = 150°C.

0.01

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 

Tj = 150°C and 

Tstart =25°C (Single Pulse)

25

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

E

A

R

 ,

 A

va

la

nc

he

 E

ne

rg

(m

J)

TOP          Single Pulse                
BOTTOM   1% Duty Cycle
ID = 170A

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AUIRFS3006 

 

2015-12-2 

 

Fig 16.  Threshold Voltage vs. Temperature 

Fig. 18 - Typical Recovery Current vs. di

f

/dt  

Fig. 20 - Typical Stored Charge vs. di

f

/dt  

Fig. 17 - Typical Recovery Current vs. di

f

/dt  

Fig. 19 - Typical Stored Charge vs. di

f

/dt  

-75 -50 -25

0

25

50

75 100 125 150 175

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

G

S

(t

h)

 G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 1.0A

ID = 1.0mA

ID = 250µA

100

200

300

400

500

600

700

800

dif / dt - (A / µs)

0

4

8

12

16

20

I R

R

M

 -

 (

A

)

IF = 112A
VR = 51V
TJ = 125°C   
TJ =  25°C  

100

200

300

400

500

600

700

800

dif / dt - (A / µs)

0

4

8

12

16

20

I R

R

M

 -

 (

A

)

IF = 170A
VR = 51V
TJ = 125°C   
TJ =  25°C  

100

200

300

400

500

600

700

800

dif / dt - (A / µs)

0

100

200

300

400

500

600

700

Q

R

R

 -

 (

nC

)

IF = 112A
VR = 51V
TJ = 125°C   
TJ =  25°C  

100

200

300

400

500

600

700

800

dif / dt - (A / µs)

0

100

200

300

400

500

600

700

Q

R

R

 -

 (

nC

)

IF = 170A
VR = 51V
TJ = 125°C   
TJ =  25°C  

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AUIRFS3006 

 

2015-12-2 

 

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

Fig 22a.  Unclamped Inductive Test Circuit 

Fig 22b.  Unclamped Inductive Waveforms 

Fig 23a.  Switching Time Test Circuit 

Fig 24a.  Gate Charge Test Circuit 

Fig 24b.   Gate Charge Waveform 

R G

IAS

0.01

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

tp

V

(BR)DSS

I

AS

Fig 23b.  Switching Time Waveforms 

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

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background image

 

AUIRFS3006 

 

2015-12-2 

 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

D

2

Pak (TO-263AB) Part Marking Information 

YWWA 

XX    

    XX 

Date Code 

Y= Year 

WW= Work Week 

AUFS3006 

Lot Code 

Part Number 

IR Logo 

D

2

Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) 

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AUIRFS3006 

 

2015-12-2 

D

2

Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

3

4

4

TRR

FEED DIRECTION

1.85 (.073)
1.65 (.065)

1.60 (.063)
1.50 (.059)

4.10 (.161)
3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)
10.70 (.421)

16.10 (.634)
15.90 (.626)

1.75 (.069)
1.25 (.049)

11.60 (.457)
11.40 (.449)

15.42 (.609)
15.22 (.601)

4.72 (.136)
4.52 (.178)

24.30 (.957)
23.90 (.941)

0.368 (.0145)
0.342 (.0135)

1.60 (.063)
1.50 (.059)

13.50 (.532)
12.80 (.504)

330.00
(14.173)
  MAX.

27.40 (1.079)
23.90 (.941)

60.00 (2.362)
      MIN.

30.40 (1.197)
      MAX.

26.40 (1.039)
24.40 (.961)

NOTES :
1.   COMFORMS TO EIA-418.
2.   CONTROLLING DIMENSION: MILLIMETER.
3.   DIMENSION MEASURED @ HUB.
4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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AUIRFS3006 

10 

 

2015-12-2 

 

†  Highest passing voltage. 

Published by 
Infineon Technologies AG 
81726 München, Germany 

© 

Infineon Technologies AG 2015 

All Rights Reserved. 
 
IMPORTANT NOTICE
 
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics 
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any 
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and 
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third 
party.  
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this 
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of 
the product of Infineon Technologies in customer’s applications.  
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of 
customer’s technical departments to evaluate the suitability of the product for the intended application and the 
completeness of the product information given in this document with respect to such application.   
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest 
Infineon Technologies office (

www.infineon.com

). 

WARNINGS 
Due to technical requirements products may contain dangerous substances. For information on the types in question 
please contact your nearest Infineon Technologies office. 
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized 
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a 
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.  

Qualification Information  

Qualification Level 

Automotive 

(per AEC-Q101)  

Comments: This part number(s) passed Automotive qualification. Infineon’s  
Industrial and Consumer qualification level is granted by extension of the higher 
Automotive level. 

 Moisture Sensitivity Level     

D

2

-Pak  

MSL1   

ESD 

Machine Model  

Class M4 (+/- 800V)

 

 

AEC-Q101-002 

Human Body Model  

Class H3A (+/- 6000V)

 

 

AEC-Q101-001 

Charged Device Model 

Class C5 (+/- 2000V)

 

 

AEC-Q101-005 

RoHS Compliant 

Yes 

Revision History  

Date Comments 

12/2/2015 



Updated datasheet with corporate template 



Corrected ordering table on page 1. 

Maker
Infineon Technologies