AUIRFR5410
V
DSS
-100V
R
DS(on)
max.
0.205
I
D
-13A
Features
Advanced Planar Technology
P-Channel MOSFET
Low
On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
1
2015-12-2
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
-13
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ -10V
-8.2
I
DM
Pulsed Drain Current -52
P
D
@T
C
= 25°C
Maximum Power Dissipation
66
W
Linear Derating Factor
0.53
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 194
mJ
I
AR
Avalanche Current -8.4
A
E
AR
Repetitive Avalanche Energy 6.3
mJ
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
dv/dt
Pead Diode Recovery dv/dt -5.0
V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case –––
1.9
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) –––
50
R
JA
Junction-to-Ambient
–––
110
D-Pak
AUIRFR5410
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRFR5410
D-Pak
Tube
75
AUIRFR5410
Tape and Reel Left
3000
AUIRFR5410TRL
G D S
Gate Drain Source
S
G
D
HEXFET
®
Power MOSFET
AUIRFR5410
2
2015-12-2
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 6.4mH, R
G
= 25
, I
AS
= -7.8A (See fig. 12)
I
SD
-7.8A, di/dt 200A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300
µ
s; duty cycle
2%.
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact.
Uses IRF9530N data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-100 ––– –––
V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– -0.12 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.205
V
GS
= -10V, I
D
= -7.8A
V
GS(th)
Gate Threshold Voltage
-2.0 ––– -4.0
V V
DS
= V
GS
, I
D
= -250µA
gfs
Forward Trans conductance
3.2
––– –––
S V
DS
= -25V, I
D
= -7.8A
I
DSS
Drain-to-Source Leakage Current
––– ––– -25
µA
V
DS
= -100V, V
GS
= 0V
––– ––– -250
V
DS
= -80V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage
–––
––– 100
V
GS
= 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
–––
58
nC
I
D
= -8.4A
Q
gs
Gate-to-Source Charge
–––
–––
8.3
V
DS
= -80V
Q
gd
Gate-to-Drain Charge
–––
–––
32
V
GS
= -10V
t
d(on)
Turn-On Delay Time
–––
15
–––
ns
V
DD
= -50V
t
r
Rise Time
–––
58
–––
I
D
= -8.4A
t
d(off)
Turn-Off Delay Time
–––
45
–––
R
G
= 9.1
t
f
Fall Time
–––
46
–––
R
D
= 6.2
L
D
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
760 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
260 –––
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
–––
170 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– -13
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -52
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
––– -1.6
V T
J
= 25°C,I
S
= -7.8A, V
GS
= 0V
t
rr
Reverse Recovery Time
–––
130 190
ns T
J
= 25°C ,I
F
= -8.4A
Q
rr
Reverse Recovery Charge
–––
650 970
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRFR5410
3
2015-12-2
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
Vs. Temperature
Fig. 1 Typical Output Characteristics
0.01
0.1
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I
, D
ra
in
-t
o
-S
ou
rce
C
u
rren
t
(A
)
DS
D
-4.5V
0.1
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I
,
D
ra
in
-t
o
-S
o
u
rc
e
C
ur
ren
t
(A
)
DS
D
-4.5V
0.1
1
10
100
4
5
6
7
8
9
10
V = 10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I
, D
rain
-to-
S
ou
rce
C
u
rr
en
t (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20
0
20 40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R
,
D
ra
in
-to
-S
o
u
rc
e
O
n
R
e
si
st
a
n
ce
(N
or
m
al
ize
d)
J
D
S
(on)
°
V
=
I =
GS
D
-10V
-14A
AUIRFR5410
4
2015-12-2
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
0
400
800
1200
1600
2000
1
10
100
C, Ca
pa
ci
ta
nc
e
(pF
)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
Q , Total Gate Charge (nC)
-V
, Ga
te-to
-S
ource
Voltag
e (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-8.4A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
0.2
0.8
1.4
2.0
2.6
-V ,Source-to-Drain Voltage (V)
-I
, R
e
ve
rse
D
ra
in
C
u
rre
n
t (A
)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I
, D
rai
n
Cur
ren
t (A)
I
, Dr
ain
C
u
rr
ent
(A)
DS
D
10us
100us
1ms
10ms
AUIRFR5410
5
2015-12-2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
0
3
6
9
12
15
T , Case Temperature ( C)
-I
, D
rain
C
urr
en
t (A
)
°
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
al
R
esp
ons
e
(Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRFR5410
6
2015-12-2
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
25
50
75
100
125
150
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E
, Si
ng
le
Pul
se Aval
anc
he
Energy
(
m
J)
J
AS
°
ID
TOP
BOTTOM
-3.5A
-4.9A
-7.8A
AUIRFR5410
7
2015-12-2
Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
AUIRFR5410
8
2015-12-2
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUFR5410
Lot Code
Part Number
IR Logo
D-Pak (TO-252AA) Part Marking Information
AUIRFR5410
9
2015-12-2
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
AUIRFR5410
10
2015-12-2
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
D-Pak
MSL1
ESD
Machine Model
Class M2 (+/- 200V)
†
AEC-Q101-002
Human Body Model
Class H1B (+/- 1000V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1125V)
†
AEC-Q101-005
RoHS Compliant
Yes
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
12/2/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
† Highest passing voltage.