AUIRFR9024N
AUIRFU9024N
V
DSS
-55V
R
DS(on)
max.
0.175
I
D
-11A
Features
Advanced Planar Technology
Low
On-Resistance
P-Channel
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET
®
Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1
2015-10-20
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
-11
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ -10V
-8
I
DM
Pulsed Drain Current -44
P
D
@T
C
= 25°C
Maximum Power Dissipation
38
W
Linear Derating Factor
0.30
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 62
mJ
I
AR
Avalanche Current -6.6
A
E
AR
Repetitive Avalanche Energy 3.8
mJ
dv/dt
Peak Diode Recovery dv/dt -10
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
–––
3.3
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) –––
50
R
JA
Junction-to-Ambient
–––
110
D-Pak
AUIRFR9024N
I-Pak
AUIRFU9024N
Base part number
Package Type
Standard Pack
Form
Quantity
AUIRFU9024N
I-Pak
Tube
75
AUIRFU9024N
AUIRFR9024N
D-Pak
Tube
75
AUIRFR9024N
Tape and Reel Left
3000
AUIRFR9024NTRL
Orderable Part Number
G D S
Gate Drain Source
G
S
D
D
S
G
D
HEXFET
®
Power MOSFET
AUIRFR/U9024N
2
2015-10-20
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 2.8mH, R
G
= 25
, I
AS
= -6.6A. (See Fig.12)
I
SD
-6.6A, di/dt -240A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300µs; duty cycle 2%.
This is applied for I-PAK, L
S
of D-PAK is measured between lead and center of die contact .
Uses IRF9Z24N data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
––– –––
V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– -0.05 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.175
V
GS
= -10V, I
D
= -6.6A
V
GS(th)
Gate Threshold Voltage
-2.0 ––– -4.0
V V
DS
= V
GS
, I
D
= -250µA
gfs
Forward Trans conductance
2.5
––– –––
S V
DS
= -25V, I
D
= -7.2A
I
DSS
Drain-to-Source Leakage Current
––– ––– -25
µA
V
DS
= -55 V, V
GS
= 0V
––– ––– -250
V
DS
= -44V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage
–––
––– 100
V
GS
= 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
–––
19
nC
I
D
= -7.2A
Q
gs
Gate-to-Source Charge
–––
–––
5.1
V
DS
= -44V
Q
gd
Gate-to-Drain Charge
–––
–––
10
V
GS
= -10V, See Fig 6 and 13
t
d(on)
Turn-On Delay Time
–––
13
–––
ns
V
DD
= -28V
t
r
Rise Time
–––
55
–––
I
D
= -7.2A
t
d(off)
Turn-Off Delay Time
–––
23
–––
R
G
= 24
t
f
Fall Time
–––
37
–––
R
D
= 3.7
See Fig 10
L
D
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
350 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
170 –––
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
–––
92
–––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– -11
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -44
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
––– -1.6
V T
J
= 25°C,I
S
= -7.2A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
47
71
ns T
J
= 25°C ,I
F
= -7.2A
Q
rr
Reverse Recovery Charge
–––
84
130
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRFR/U9024N
3
2015-10-20
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
AUIRFR/U9024N
4
2015-10-20
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
AUIRFR/U9024N
5
2015-10-20
Fig 10a. Switching Time Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
AUIRFR/U9024N
6
2015-10-20
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
AUIRFR/U9024N
7
2015-10-20
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRFR/U9024N
8
2015-10-20
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUFR9024N
Lot Code
Part Number
IR Logo
D-Pak (TO-252AA) Part Marking Information
AUIRFR/U9024N
9
2015-10-20
I-Pak (TO-251AA) Part Marking Information
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUFU9024N
Lot Code
Part Number
IR Logo
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
AUIRFR/U9024N
10
2015-10-20
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH