AUIRFR5305
AUIRFU5305
V
DSS
-55V
R
DS(on)
max.
0.065
I
D
-31A
Features
Advanced Planar Technology
Low
On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET
®
Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1
2015-10-12
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
-31
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ -10V
-22
I
DM
Pulsed Drain Current -110
P
D
@T
C
= 25°C
Maximum Power Dissipation
110
W
Linear Derating Factor
0.71
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 280
mJ
I
AR
Avalanche Current -16
A
E
AR
Repetitive Avalanche Energy 11
mJ
dv/dt
Peak Diode Recovery dv/dt -5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
–––
1.4
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) –––
50
R
JA
Junction-to-Ambient –––
110
D-Pak
AUIRFR5305
I-Pak
AUIRFU5305
Base part number
Package Type
Standard Pack
Form
Quantity
AUIRFU5305
I-Pak
Tube
75
AUIRFU5305
AUIRFR5305
D-Pak
Tube
75
AUIRFR5305
Tape and Reel Left
3000
AUIRFR5305TRL
Orderable Part Number
G D S
Gate Drain Source
G
S
D
D
S
G
D
AUIRFR/U5305
2
2015-10-12
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
DD
= -25V,
starting T
J
= 25°C, L = 2.1mH, R
G
= 25
, I
AS
= -16A. (See Fig.12)
I
SD
-16A, di/dt -280A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs; duty cycle 2%.
This is applied for I-PAK, L
S
of D-PAK is measured between lead and center of die contact .
Uses IRF5305 data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Uses typical socket mount.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
––– –––
V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– -0.034 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.065
V
GS
= -10V, I
D
= -16A
V
GS(th)
Gate Threshold Voltage
-2.0 ––– -4.0
V V
DS
= V
GS
, I
D
= -250µA
gfs
Forward Trans conductance
8.0
––– –––
S V
DS
= -25V, I
D
= -16A
I
DSS
Drain-to-Source Leakage Current
––– ––– -25
µA
V
DS
= -55 V, V
GS
= 0V
––– ––– -250
V
DS
= -44V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage
–––
––– 100
V
GS
= 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
–––
63
nC
I
D
= -16A
Q
gs
Gate-to-Source Charge
–––
–––
13
V
DS
= -44V
Q
gd
Gate-to-Drain Charge
–––
–––
29
V
GS
= -10V, See Fig 6 and 13
t
d(on)
Turn-On Delay Time
–––
14
–––
ns
V
DD
= -28V
t
r
Rise Time
–––
66
–––
I
D
= -16A
t
d(off)
Turn-Off Delay Time
–––
39
–––
R
G
= 6.8
t
f
Fall Time
–––
63
–––
R
D
= 1.6
See Fig 10
L
D
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
––– 1200 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
520 –––
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
–––
250 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– -31
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -110
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
––– -1.3
V T
J
= 25°C,I
S
= -16A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
71
110
ns T
J
= 25°C ,I
F
= -16A
Q
rr
Reverse Recovery Charge
–––
170 250
nC di/dt = 100A/µs
AUIRFR/U5305
3
2015-10-12
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
1
10
100
1000
0.1
1
10
100
D
DS
20µs PULSE WIDTH
T = 25°C
c
A
-I , D
ra
in
-to
-So
urce
C
urre
nt
(A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
1
10
100
1000
0.1
1
10
100
D
DS
A
-I ,
Dra
in
-to
-S
ou
rc
e Cu
rr
en
t (A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
4
5
6
7
8
9
10
T = 25°C
J
T = 175°C
J
A
V = -25V
20µs PULSE WIDTH
DS
GS
-V , Gate-to-Source Voltage (V)
D
-I
,
D
rai
n-
to
-S
o
u
rc
e C
u
rr
e
n
t
(A
)
0.0
0.5
1.0
1.5
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
J
T , Junction Temperature (°C)
R
, Dra
in
-to
-S
ou
rc
e On
Re
si
st
an
ce
DS
(o
n)
(N
orm
al
ized
)
A
I = -27A
V = -10V
D
GS
AUIRFR/U5305
4
2015-10-12
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
0
500
1000
1500
2000
2500
1
10
100
C, Capac
ita
nc
e
(p
F)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
DS
-V , Drain-to-Source Voltage (V)
0
4
8
12
16
20
0
10
20
30
40
50
60
Q , Total Gate Charge (nC)
G
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = -44V
V = -28V
I = -16A
GS
-V
,
Gate
-t
o-
So
urc
e
V
ol
ta
ge
(V)
D
DS
DS
10
100
1000
0.4
0.8
1.2
1.6
2.0
T = 25°C
J
V = 0V
GS
SD
SD
A
-I
,
R
ev
erse
Dra
in
C
urre
nt
(
A
)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
DS
-V , Drain-to-Source Voltage (V)
D
-I
,
D
ra
in
C
urr
en
t (A
)
AUIRFR/U5305
5
2015-10-12
Fig 10a. Switching Time Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
T , Case Temperature
( C)
-I
,
D
ra
in
C
u
rr
e
n
t (A
)
°
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Th
er
m
a
l R
esponse
(Z
)
1
thJ
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRFR/U5305
6
2015-10-12
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
0
100
200
300
400
500
600
700
25
50
75
100
125
150
175
J
E
,
S
in
gle
P
ul
se
Av
al
an
ch
e E
ne
rg
y (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = -25V
I
TOP -6.6A
-11A
BOTTOM -16A
DD
D
AUIRFR/U5305
7
2015-10-12
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRFR/U5305
8
2015-10-12
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUFR5305
Lot Code
Part Number
IR Logo
D-Pak (TO-252AA) Part Marking Information
AUIRFR/U5305
9
2015-10-12
I-Pak (TO-251AA) Part Marking Information
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUFU5305
Lot Code
Part Number
IR Logo
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
AUIRFR/U5305
10
2015-10-12
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH