AUIRFP4409
HEXFET
®
Power MOSFET
D
S
G
TO-247AC
G D S
Gate Drain Source
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized device de-
sign that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for
use in Automotive and a wide variety of other applications
.
Ordering Information
Base part number Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFP4409
TO-247AC
Tube
25
AUIRFP4409
V
DSS
300V
R
DS(on) typ.
56m
max
69m
I
D
38A
Parameter Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
38
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
27
I
DM
Pulsed Drain Current
152
P
D
@T
C
= 25°C
Maximum Power Dissipation
341
W
Linear Derating Factor
2.3
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
541
mJ
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Typ.
Max.
Units
R
JC
Junction-to-Case
––– 0.44
°C/W
R
CS
Case-to-Sink, Flat Greased Surface
0.24 –––
R
JA
Junction-to-Ambient
––– 40
S
G
D
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
1
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© 2013 International Rectifier
July 10, 2013
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
2
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© 2013 International Rectifier
July 10, 2013
AUIRFP4409
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
300
––– –––
V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.24 ––– V/°C Reference to 25°C, I
D
= 3.5mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
56
69
m
V
GS
= 10V, I
D
= 24A
V
GS(th)
Gate Threshold Voltage
3.0
––– 5.0
V V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=300 V, V
GS
= 0V
––– ––– 250
V
DS
=300V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
––– -100
V
GS
= -20V
R
G
Gate Resistance
–––
1.3
–––
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
gfs Forward
Transconductance
45
–––
–––
S
V
DS
= 50V, I
D
=24A
Q
g
Total Gate Charge
–––
83
125
nC
I
D
= 24A
Q
gs
Gate-to-Source Charge
–––
28
42
V
DS
= 150V
Q
gd
Gate-to-Drain Charge
–––
26
39
V
GS
= 10V
t
d(on)
Turn-On Delay Time
–––
18
–––
ns
V
DD
= 195V
t
r
Rise Time
–––
23
–––
I
D
= 24A
t
d(off)
Turn-Off Delay Time
–––
34
–––
R
G
= 2.2
t
f
Fall Time
–––
20
–––
V
GS
= 10V
C
iss
Input Capacitance
––– 5168 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
300 –––
V
DS
= 50V
C
rss
Reverse Transfer Capacitance
–––
77
–––
ƒ = 1.0MHz
C
oss eff.(ER)
Effective Output Capacitance (Energy Related) –––
196 –––
V
GS
= 0V, VDS = 0V to 240V
See Fig.11
C
oss eff.(TR)
Output Capacitance (Time Related)
–––
265 –––
V
GS
= 0V, VDS = 0V to 240V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 40
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 160
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
––– 1.3
V T
J
= 25°C,I
S
= 24A,V
GS
= 0V
t
rr
Reverse Recovery Time
––– 302 –––
ns
T
J
= 25°C V
DD
= 255V
––– 379 –––
T
J
= 125°C I
F
= 24A,
Q
rr
Reverse Recovery Charge
––– 1739 –––
nC
T
J
= 25°C di/dt = 100A/µs
––– 2497 –––
T
J
= 125°C
I
RRM
Reverse Recovery Current
–––
13
–––
A T
J
= 25°C
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting T
J
= 25°C, L = 2.05mH, R
G
= 50
, I
AS
= 24A, V
GS
=10V.
I
SD
24A, di/dt 1771A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994
http://www.irf.com/technical-info/ app notes/an-994.pdf
R
is measured at T
J
approximately 90°C
3
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© 2013 International Rectifier
July 10, 2013
AUIRFP4409
Qualification Information
†
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
Moisture Sensitivity Level
TO-247AC N/A
ESD
Machine Model
Class M4 (+/- 500V)
††
AEC-Q101-002
Human Body Model
Class H2 (+/- 4000V)
††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000)
††
AEC-Q101-005
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site:
http//www.irf.com/
†† Highest passing voltage.
4
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© 2013 International Rectifier
July 10, 2013
AUIRFP4409
Fig 1. Typical Output Characteristics
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VDS = 50V
60µs PULSE WIDTH
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
60µs
PULSE WIDTH
Tj = 25°C
5.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o
-S
ou
rc
e
C
ur
re
nt
(
A
)
5.0V
60µs
PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 24A
VGS = 10V
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 240V
VDS= 150V
VDS= 60V
ID = 24A
5
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© 2013 International Rectifier
July 10, 2013
AUIRFP4409
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
270
280
290
300
310
320
330
340
350
360
370
V
(B
R
)D
S
S
,
D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(
V
)
Id = 3.5mA
Fig 8. Maximum Safe Operating Area
-50
0
50
100 150 200 250 300 350
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
E
ne
rg
y
(µ
J)
Fig 11. Typical C
oss
Stored Energy
Fig 12. Threshold Voltage vs. Temperature
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
Fig 9. Maximum Drain Current vs. Case Temperature
-75
-25
25
75
125
175
225
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
(t
h)
,
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig 10. Drain-to–Source Breakdown Voltage
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
7
14
21
28
35
42
I D
,
D
ra
in
C
ur
re
nt
(
A
)
Fig 7. Typical Source-Drain Diode Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
6
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© 2013 International Rectifier
July 10, 2013
AUIRFP4409
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
200
400
600
800
1000
diF /dt (A/µs)
1000
1500
2000
2500
3000
3500
Q
R
R
(
nC
)
IF = 16A
VR = 255V
TJ = 25°C
TJ = 125°C
0
200
400
600
800
1000
diF /dt (A/µs)
10
20
30
40
50
I R
R
M
(
A
)
IF = 16A
VR = 255V
TJ = 25°C
TJ = 125°C
Fig 16. Typical Stored Charge vs. dif/dt
Fig 17. Typical Stored Charge vs. dif/dt
Fig 14. Typical Recovery Current vs. dif/dt
0
200
400
600
800
1000
diF /dt (A/µs)
10
20
30
40
50
60
I R
R
M
(
A
)
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
0
200
400
600
800
1000
diF /dt (A/µs)
1000
1500
2000
2500
3000
3500
4000
4500
5000
Q
R
R
(
nC
)
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
Fig 15. Typical Recovery Current vs. dif/dt
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
he
rma
l R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
7
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© 2013 International Rectifier
July 10, 2013
AUIRFP4409
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
Fig 19a. Unclamped Inductive Test Circuit
R G
I
AS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 20a. Switching Time Test Circuit
Fig 21a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 21b. Gate Charge Waveform
8
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© 2013 International Rectifier
July 10, 2013
AUIRFP4409
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
2x
c
"A"
"A"
E
E2/2
Q
E2
2X
L1
L
D
A
e
2x b2
3x b
LEAD TIP
SEE
VIEW "B"
b4
B
A
Ø .010
B A
A2
A1
Ø .010
B A
D1
S
E1
THERMAL PAD
-A-
Ø P
Ø .010
B A
VIEW: "B"
SECTION: C-C, D-D, E-E
(b, b2, b4)
(c)
BASE METAL
PLATING
VIEW: "A" - "A"
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
AUFP4409
Lot Code
Part Number
IR Logo
9
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© 2013 International Rectifier
July 10, 2013
AUIRFP4409
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) re-
serve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU”
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of or-
der acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to sup-
port this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
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ucts and applications using IR components. To minimize the risks with customer products and applications, customers
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For technical support, please contact IR’s Technical Assistance Center
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