AUIRFP2602
V
(BR)DSS
24V
R
DS(on)
typ.
1.25m
Ω
max.
1.6m
Ω
I
D (Silicon Limited)
380A
I
D (Package Limited)
180A
Features
• Advanced Process Technology
• Low
On-Resistance
• 175°C Operating Temperature
• Fast
Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
1
2016-2-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
380
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
270
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
180
I
DM
Pulsed Drain Current 1580
P
D
@T
C
= 25°C
Maximum Power Dissipation
380
W
Linear Derating Factor
2.5
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 400
E
AS (Tested)
Single Pulse Avalanche Energy Tested Value 1011
I
AR
Avalanche Current
See Fig.14,15, 17a, 17b
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case –––
0.40
°C/W
R
θCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
R
θJA
Junction-to-Ambient
–––
40
TO-247AC
AUIRFP2602
S
D
G
Base part number
Package Type
Standard Pack
Form
Quantity
AUIRFP2602
TO-247AC
Tube
25
AUIRFP2602
Orderable Part Number
G D S
Gate Drain
Source
AUIRFP2602
2
2016-2-16
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.025mH, R
G
= 25
Ω, I
AS
= 180A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
≤ 1.0ms; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while VDS is rising from 0 to 80% V
DSS
.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
R
θ
is measured at T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 180A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
24
–––
–––
V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient
–––
0.02
––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
1.25
1.6
m
Ω V
GS
= 10V, I
D
= 180A
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
230
–––
–––
S V
DS
= 10V, I
D
= 180A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=24 V, V
GS
= 0V
––– ––– 250
V
DS
=24V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
––– -200
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
260
390
nC
I
D
= 180A
Q
gs
Gate-to-Source Charge
–––
72
–––
V
DS
= 12V
Q
gd
Gate-to-Drain Charge
–––
100
–––
V
GS
= 10V
t
d(on)
Turn-On Delay Time
–––
70
–––
ns
V
DD
= 12V
t
r
Rise Time
–––
490
–––
I
D
= 180A
t
d(off)
Turn-Off Delay Time
–––
150
–––
R
G
= 2.5
Ω
t
f
Fall Time
–––
270
–––
V
GS
= 10V
L
D
Internal Drain Inductance
–––
5.0
–––
pF
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
–––
13
–––
from package
and center of die contact
C
iss
Input Capacitance
––– 11220 –––
V
GS
= 0V
C
oss
Output Capacitance
––– 4800 –––
V
DS
= 19V
C
rss
Reverse Transfer Capacitance
––– 2660 –––
ƒ = 1.0KHz
C
oss
Output Capacitance
––– 13020 –––
V
GS
=0V, V
DS
=1.0V ,ƒ = 1.0KHz
C
oss
Output Capacitance
4800
V
GS
=0V, V
DS
=19V ,ƒ = 1.0KHz
C
oss eff.
Effective Output Capacitance
––– 6710 –––
V
GS
= 0V, V
DS
= 0V to 19V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– –––
380
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 1580
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.3
V T
J
= 25°C,I
S
= 180A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
55
83
ns T
J
= 25°C ,I
F
= 180A, V
DD
=12V
Q
rr
Reverse Recovery Charge
–––
56
84
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRFP2602
3
2016-2-16
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Typical Forward Transconductance vs. Drain Current
Fig. 1 Typical Output Characteristics
Fig 5. Typical Source-Drain Diode Forward Voltage
Fig 6. Normalized On-Resistance vs. Temperature
0.1
1
10
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
ra
in
-t
o
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
≤60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1
1
10
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
,
D
ra
in
-t
o
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
4.5V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
2
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VDS = 10V
≤60µs PULSE WIDTH
0
40
80
120
160
200
ID, Drain-to-Source Current (A)
0
50
100
150
200
250
300
G
fs
,
F
or
w
ar
d
T
ra
ns
co
nd
uc
ta
nc
e
(S
)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 180A
VGS = 10V
AUIRFP2602
4
2016-2-16
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 7 Typical Capacitance vs. Drain-to-Source Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 19V
VDS= 12V
ID= 180A
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
Fig 9. Maximum Safe Operating Area
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
50
100
150
200
250
300
350
400
I D
,
D
ra
in
C
ur
re
nt
(
A
)
Limited By Package
Fig 10. Maximum Drain Current vs. Case Temperature
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τI (sec)
0.0224
0.00002
0.1778
0.00169
0.1362
0.013883
0.0641
0.000095
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τi/Ri
Ci=
τi/Ri
τ
C
τ
C
τ
4
τ
4
R
4
R
4
AUIRFP2602
5
2016-2-16
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 14. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during
avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
∆T/ Z
thJC
I
av
= 2
∆T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15. Maximum Avalanche Energy vs. Temperature
Fig 13. Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
1600
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 54A
95A
BOTTOM 180A
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
V
G
S
(t
h)
, G
at
e
T
hr
es
ho
ld
V
ol
ta
ge
(
V
)
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τj = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj = 150°C and
Tstart =25°C (Single Pulse)
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
E
A
R
,
A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 180A
AUIRFP2602
6
2016-2-16
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Fig 17a. Unclamped Inductive Test Circuit
R G
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
-
VDD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 17b. Unclamped Inductive Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
Fig 18a. Gate Charge Test Circuit
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
1K
VCC
DUT
0
L
AUIRFP2602
7
2016-2-16
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TO-247AC Part Marking Information
YWWA
XX
•
XX
Date Code
Y= Year
WW= Work Week
AUIRFP2602
Lot Code
Part Number
IR Logo
TO-247AC Package Outline (Dimensions are
AUIRFP2602
8
2016-2-16
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-247AC
N/A
ESD
Machine Model
Class M4 (+/- 800V)
†
AEC-Q101-002
Human Body Model
Class H2 (+/- 4000V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†
AEC-Q101-005
RoHS Compliant
Yes
Moisture Sensitivity Level
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
2/16/2016
•
Updated datasheet with corporate template
•
Corrected typo, Capacitance test condition from VDS=25V to VDS=19V on page 2
† Highest passing voltage.