HEXFET
®
Power MOSFET
S
D
G
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Features
• Advanced Planar Technology
• Low On-Resistance
• Dynamic dV/dT Rating
• 150°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
Parameter
Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
h
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
g
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
g
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)
h
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)
g
Linear Derating Factor (PCB Mount)
g
mW/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
cg
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJA
Junction-to-Ambient (PCB mount, steady state)
g
90
120
°C/W
R
θJA
Junction-to-Ambient (PCB mount, steady state)
h
50
60
W
°C
2.1
0.1
214
2.8
Max.
4.0
2.3
11.2
2.8
-55 to + 150
1.0
8.3
± 20
5.0
V
(BR)DSS
55V
R
DS(on)
max.
75m
Ω
I
D
2.8A
AUIRFL024N
AUTOMOTIVE GRAD
E
1
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SOT-223
AUIRFL024N
Form
Quantity
Tube
95
AUIRFL024N
Tape and Reel
2500
AUIRFL024NTR
Base part number
Package Type
Standard Pack
Orderable Part Number
AUIRFL024N
SOT-223
D
G
D
S
2
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Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
V
DD
= 25V, starting T
J
= 25°C, L = 54.7mH
R
G
= 25Ω, I
AS
= 2.8A. (See Figure 12)
I
SD
≤ 1.68A, di/dt ≤ 155A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C .
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on FR-4 board using minimum recommended
footprint.
When mounted on 1 inch square copper board, for comparison
with other SMD devices.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
ΔV
(BR)DSS
/
ΔT
J
Breakdown Voltage Temp. Coefficient
–––
0.056
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
75
m
Ω
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
3.0
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
25
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Q
g
Total Gate Charge
–––
–––
18.3
Q
gs
Gate-to-Source Charge
–––
–––
3.0
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
–––
7.7
t
d(on)
Turn-On Delay Time
–––
8.1
–––
t
r
Rise Time
–––
13.4
–––
ns
t
d(off)
Turn-Off Delay Time
–––
22.2
–––
t
f
Fall Time
–––
17.7
–––
C
iss
Input Capacitance
–––
400
–––
C
oss
Output Capacitance
–––
145
–––
pF
C
rss
Reverse Transfer Capacitance
–––
60
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
–––
–––
2.8
(Body Diode)
A
I
SM
Pulsed Source Current
–––
–––
11.2
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.0
V
t
rr
Reverse Recovery Time
–––
35
53
ns
Q
rr
Reverse Recovery Charge
–––
50
75
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
T
J
= 25°C, I
F
= 1.68A
Conditions
I
D
= 1.68A
R
G
= 24
Ω
T
J
= 25°C, I
S
= 1.68A, V
GS
= 0V
f
showing the
integral reverse
p-n junction diode.
Conditions
R
D
= 17
Ω, See Fig. 10 f
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 2.8A
f
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
V
DD
= 28V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
DS
= 25V, I
D
= 1.6A
I
D
= 1.68A
V
DS
= 28V
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V, See Fig. 6 and 9
f
3
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Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
1
10
100
4.5
5.0
5.5
6.0
6.5
V = 25V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
rain-to-S
ource C
urrent (A
)
GS
D
T = 150 C
J
°
T = 25 C
J
°
-60 -40 -20 0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R
, D
ra
in
-to
-S
ou
rce
O
n R
esista
nc
e
(Norm
al
iz
ed)
J
D
S
(on)
°
V
=
I =
GS
D
10V
2.8A
0.1
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , D
rain-to-Source C
urrent (A)
DS
D
4.5V
0.1
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , D
rain-to-S
ource C
urrent (A
)
DS
D
4.5V
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
100
200
300
400
500
600
700
V , Drain-to-Source Voltage (V)
C, Capaci
tance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.1
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
0
5
10
15
20
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.68 A
V
= 27V
DS
V
= 44V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
5
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AUIRFL024N
Q
G
Q
GS
Q
GD
V
G
Charge
+
-
V
DS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μF
50K
Ω
.2
μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10V
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
al
R
esponse
(Z
)
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
6
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 12a. Unclamped Inductive Test Circuit
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
10V
25
50
75
100
125
150
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E
,
S
ingl
e P
ul
se A
val
anche E
ner
gy (
m
J)
J
AS
°
ID
TOP
BOTTOM
1.3A
2.2A
2.8A
7
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SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
FL024N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
8
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AUIRFL024N
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
TYP.
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
4
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
9
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AUIRFL024N
Qualification standards can be found at International Rectifiers web site:
http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
Qualification Information
†
SOT-223
MSL1
RoHS Compliant
Yes
ESD
Machine Model
Class M2 (+/- 150V)
†††
AEC-Q101-002
Human Body Model
Class H1A (+/- 350V)
†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Moisture Sensitivity Level
10
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IMPORTANT NOTICE
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changes to its products and services at any time and to discontinue any product or services without notice.
Part numbers designated with the AU prefix follow automotive industry and / or customer specific
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