AUIRF7484Q
V
DSS
40V
R
DS(on)
max.
10m
I
D
14A
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Features
Advanced Planar Technology
Low
On-Resistance
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1
2015-11-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
A
= 25°C
Continuous Drain Current
14
A
I
D
@ T
A
= 70°C
Continuous Drain Current
11
I
DM
Pulsed Drain Current 110
P
D
@T
A
= 25°C
Maximum Power Dissipation 2.5
W
Linear Derating Factor
0.02
W/°C
V
GS
Gate-to-Source Voltage
± 8.0
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 230
mJ
I
AR
Avalanche Current
See Fig.19,20, 16b, 16c
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
°C/W
R
JL
Junction-to-Drain Lead
–––
20
R
JA
Junction-to-Ambient –––
50
SO-8
AUIRF7484Q
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRF7484Q
SO-8
Tape and Reel
4000
AUIRF7484QTR
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
AUIRF7484Q
2
2015-11-16
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
400µs; duty cycle 2%.
Surface mounted on 1" in square Cu board.
Starting T
J
= 25°C, L = 2.3mH, R
G
= 25
, I
AS
= 14A. (See Fig. 12)
Limited by T
Jmax
, see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
––– –––
V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.040 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
10
m
V
GS
= 7.0V, I
D
= 14A
V
GS(th)
Gate Threshold Voltage
1.0
–––
2.0
V V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
40
––– –––
S V
DS
= 10V, I
D
= 14A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=40V, V
GS
= 0V
––– ––– 250
V
DS
= 32V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 200
nA
V
GS
= 8.0V
Gate-to-Source Reverse Leakage
–––
––– -200
V
GS
= -8.0V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
69
100
nC
I
D
= 14A
Q
gs
Gate-to-Source Charge
–––
9.0
–––
V
DS
= 32V
Q
gd
Gate-to-Drain Charge
–––
16
–––
V
GS
= 7.0V
t
d(on)
Turn-On Delay Time
–––
9.3
–––
ns
V
DD
= 20V
t
r
Rise Time
–––
5.0
–––
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
–––
180 –––
R
G
= 6.2
t
f
Fall Time
–––
58
–––
V
GS
= 7.0V
C
iss
Input Capacitance
––– 3520 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
660 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
–––
76
–––
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 2.3
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 110
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.3
V T
J
= 25°C,I
S
= 2.3A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
59
89
ns T
J
= 25°C ,I
F
= 2.3A,
Q
rr
Reverse Recovery Charge
–––
110 170
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF7484Q
3
2015-11-16
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
100000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
1.8V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 7.5V
7.0V
4.5V
3.0V
2.5V
2.3V
2.0V
BOTTOM 1.8V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
1.8V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 7.5V
7.0V
4.5V
3.0V
2.5V
2.3V
2.0V
BOTTOM 1.8V
1.0
2.0
3.0
4.0
VGS, Gate-to-Source Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
)
TJ = 25°C
TJ = 150°C
VDS = 15V
20µs PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature
( C)
R
, D
ra
in
-to
-S
ou
rc
e
O
n R
e
si
sta
n
ce
(N
o
rm
a
lize
d)
J
D
S
(on)
°
V
=
I
=
GS
D
10V
14A
AUIRF7484Q
4
2015-11-16
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
, C
ap
ac
ita
nc
e(
pF
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
Q , Total Gate Charge (nC)
V , G
a
te
-t
o
-S
o
u
rc
e
V
o
lta
g
e
(
V
)
G
GS
I
=
D
14A
V
= 8V
DS
V
= 20V
DS
V
= 32V
DS
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
0.10
1
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 150°C
VGS = 0V
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
AUIRF7484Q
5
2015-11-16
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
0
3
6
9
12
15
T , Case Temperature
( C)
I
, Dr
a
in C
u
rr
e
nt
(
A
)
°
C
D
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Th
e
rm
a
l R
e
sp
o
n
se
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7484Q
6
2015-11-16
Fig 12.
Typical On-Resistance Vs.
Gate Voltage
Fig 13.
Typical On-Resistance Vs.
Drain Current
Fig 15. Typical Power Vs. Time
Fig. 14. Typical Threshold Voltage Vs. Junction
Temperature
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate -to -Source Voltage (V)
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
ID = 14A
0
20
40
60
80
100
120
ID , Drain Current (A)
8.60
8.70
8.80
8.90
9.00
9.10
9.20
9.30
9.40
R
D
S
(
on
)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
m
)
VGS = 7.0V
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( °C )
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 250µA
1.00
10.00
100.00
1000.00
Time (sec)
0
10
20
30
40
50
P
ow
er
(
W
)
AUIRF7484Q
7
2015-11-16
Fig 16a. Maximum Avalanche Energy
vs. Drain Current
Fig 17. Gate Charge Test Circuit
Fig 18. Basic Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
R G
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 16b. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 16c. Unclamped Inductive Waveforms
25
50
75
100
125
150
0
104
208
312
416
520
Starting Tj, Junction Temperature
( C)
E
, S
ingl
e P
ul
se A
val
an
che E
n
ergy
(
m
J)
AS
°
I D
TOP
BOTTOM
6.3A
11A
14A
AUIRF7484Q
8
2015-11-16
Fig 19. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 19, 20:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16b, 16c.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during
avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as
25°C in Figure 11, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 20. Maximum Avalanche Energy
vs. Temperature
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
tav (sec)
0.01
0.1
1
10
100
A
va
la
nc
he
C
ur
re
nt
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses
0.01
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
25
50
75
100
125
150
175
200
225
250
E
A
R
,
A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 14A
AUIRF7484Q
9
2015-11-16
SO-8 Part Marking Information
SO-8 Package Outline
(Dimensions are shown in millimeters (inches)
e 1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
M IN
M AX
M ILLIM ETERS
IN C H ES
M IN
M AX
D IM
8°
e
c
.0075
.0098
0.19
0.25
.025 BASIC
0.635 BASIC
8
7
5
6
5
D
B
E
A
e
6X
H
0.25 [ .010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [ .010]
C A B
e1
A
A1
8X b
C
0.10 [ .004]
4
3
1
2
F O O T P R I N T
8 X 0 . 7 2 [ . 0 2 8 ]
6 . 4 6 [ . 2 5 5 ]
3 X 1 . 2 7 [ . 0 5 0 ]
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
N O T E S :
1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .
5 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .
7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O
A S U B S T R A T E .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] .
8 X 1 . 7 8 [ . 0 7 0 ]
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
AUIRF7484Q
10
2015-11-16
SO-8 Tape and Reel (
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/