AUIRF7379Q
V
DSS
30V
R
DS(on)
typ.
0.038
I
D
5.8A
-30V
0.070
-4.3A
N-CH P-CH
max. 0.045
0.090
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Features
Advanced Planar Technology
Low
On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1
2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol
Parameter
Max.
Units
N-Channel P-Channel
V
DS
Drain-Source
Voltage
30
-30 V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
5.8
-4.3
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
4.6
-3.4
I
DM
Pulsed Drain Current 46
-34
P
D
@T
A
= 25°C
Maximum Power Dissipation
2.5
W
Linear Derating Factor
0.02
V
GS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt 5.0
-5.0
V/ns
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
W/°C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) –––
50
SO-8
AUIRF7379Q
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRF7379Q
SO-8
Tape and Reel
4000
AUIRF7379QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
AUIRF7379Q
2
2015-9-30
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch 30 ––– –––
V
V
GS
= 0V, I
D
= 250µA
P-Ch -30 ––– –––
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
N-Ch ––– 0.032 –––
V/°C
Reference to 25°C, I
D
= 1mA
P-Ch
–––
-0.037 –––
Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
N-Ch
––– 0.038 0.045
V
GS
= 10V, I
D
= 5.8A
––– 0.055 0.075
V
GS
= 4.5V, I
D
= 4.9A
P-Ch
––– 0.070 0.090
V
GS
= -10V, I
D
= -4.3A
––– 0.130 0.180
V
GS
= -4.5V, I
D
= -3.7A
V
GS(th)
Gate Threshold Voltage
N-Ch 1.0 ––– 3.0
V
V
DS
= V
GS
, I
D
= 250µA
P-Ch -1.0 ––– -3.0
V
DS
= V
GS
, I
D
= -250µA
gfs
Forward Trans conductance
N-Ch 5.2 ––– –––
S
V
DS
= 15V, I
D
= 2.4A
P-Ch 2.5 ––– –––
V
DS
= -24V, I
D
= -1.8A
I
DSS
Drain-to-Source Leakage Current
N-Ch ––– ––– 1.0
µA
V
DS
=24V, V
GS
= 0V
P-Ch ––– ––– -1.0
V
DS
= -24V,V
GS
= 0V
N-Ch ––– ––– 25
V
DS
=24V, V
GS
= 0V ,T
J
= 125°C
P-Ch ––– ––– -25
V
DS
= -24V,V
GS
= 0V,T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
N-P
–––
–––
± 100
nA
V
GS
= ± 20V
Gate-to-Source Reverse Leakage
N-P
–––
–––
± 100
V
GS
= ± 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
N-Ch ––– ––– 25
nC
N-Channel
P-Ch ––– ––– 25
I
D
= 2.4A, V
DS
= 24V,V
GS
= 10V
Q
gs
Gate-to-Source Charge
N-Ch ––– ––– 2.9
P-Ch ––– ––– 2.9
P-Channel
Q
gd
Gate-to-Drain Charge
N-Ch ––– ––– 7.9
I
D
= -1.8A,V
DS
= -24V,V
GS
= -10V
P-Ch –––
9.0
t
d(on)
Turn-On Delay Time
N-Ch ––– 6.8 –––
ns
N-Channel
P-Ch ––– 11 –––
V
DD
= 15V,I
D
= 2.4A,R
G
= 6.0
t
r
Rise Time
N-Ch ––– 21 –––
R
D
= 6.2
P-Ch ––– 17 –––
t
d(off)
Turn-Off Delay Time
N-Ch ––– 22 –––
P-Channel
P-Ch ––– 25 –––
V
DD
= -15V,I
D
= -1.8A,R
G
= 6.0
t
f
Fall Time
N-Ch ––– 7.7 –––
R
D
= 8.2
P-Ch ––– 18
L
D
Internal Drain Inductance
N-P
–––
4.0
–––
nH
Between lead,6mm (0.25in.)from
L
S
Internal
Source
Inductance
N-P
–––
6.0
–––
Package and center of die contact
C
iss
Input Capacitance
N-Ch ––– 520 –––
pF
N-Channel
P-Ch ––– 440 –––
V
GS
= 0V,V
DS
= 25V,ƒ = 1.0MHz
C
oss
Output Capacitance
N-Ch ––– 180 –––
P-Ch ––– 200 –––
P-Channel
C
rss
Reverse Transfer Capacitance
N-Ch ––– 72 –––
V
GS
= 0V,V
DS
= -25V,ƒ = 1.0MHz
P-Ch ––– 93 –––
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
I
S
Continuous Source Current (Body Diode)
N-Ch ––– ––– 3.1
A
P-Ch ––– ––– -3.1
I
SM
Pulsed Source Current
N-Ch ––– ––– 46
(Body Diode)
P-Ch ––– ––– -34
V
SD
Diode Forward Voltage
N-Ch ––– ––– 1.0
T
J
= 25°C,I
S
= 1.8A,V
GS
= 0V
P-Ch ––– ––– -1.0
T
J
= 25°C,I
S
= -1.8A,V
GS
= 0V
t
rr
Reverse Recovery Time
N-Ch ––– 47 71
ns
N-Channel
P-Ch ––– 53 80
T
J
= 25°C ,I
F
= 2.4A, di/dt = 100A/µs
Q
rr
Reverse Recovery Charge
N-Ch ––– 56 84
nC
P-Channel
P-Ch 66 99
T
J
= 25°C,I
F
= -1.8A, di/dt = 100A/µs
V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
N-Channel I
SD
2.4A, di/dt 73A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
P-Channel
I
SD
-1.8A, di/dt 90A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse
width
300µs; duty cycle 2%.
Surface mounted on FR-4 board , t
10sec.
AUIRF7379Q
3
2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Typical Source-Drain Diode
Forward Voltage
Fig. 1 Typical Output Characteristics
N-Channel
1
10
100
1000
0.1
1
10
100
I ,
D
rain-
to-S
our
ce C
urrent
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25°C
A
4.5V
J
1
10
100
1000
0.1
1
10
100
I
, D
rain-
to-S
our
ce C
ur
rent
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 150°C
A
4.5V
J
10
100
4
5
6
7
8
9
10
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I
, D
ra
in
-t
o
-S
ou
rc
e
C
u
rr
e
n
t (A
)
A
V = 15V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
, R
ev
ers
e D
ra
in
C
ur
re
nt (A)
SD
SD
A
AUIRF7379Q
4
2015-9-30
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
Fig. 7 Typical On-Resistance Vs. Gate Voltage
N-Channel
0.0
0.5
1.0
1.5
2.0
-60
-40
-20
0
20
40
60
80
100 120 140 160
J
T , Junction Temperature (°C)
R
,
Dra
in
-to
-S
ou
rc
e On
Resis
ta
nc
e
DS
(on
)
(N
or
ma
liz
ed)
V = 10V
GS
A
I = 4.0A
D
AUIRF7379Q
5
2015-9-30
Fig 8.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9.
Typical Gate Charge Vs.
Gate-to-Source
Voltage
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
N-Channel
0
200
400
600
800
1000
1
10
100
C, Capac
ita
nc
e (
pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
al
R
esponse
(Z
)
1
thJ
A
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7379Q
6
2015-9-30
P-Channel
Fig. 12 Typical Output Characteristics
Fig. 13
Typical Transfer Characteristics
Fig. 14 Typical Source-Drain Diode
Forward Voltage
Fig. 11 Typical Output Characteristics
1
10
100
0.1
1
10
100
D
DS
A
-I ,
D
ra
in
-to
-So
urce
C
urr
en
t (A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 25°C
J
1
10
100
0.1
1
10
100
D
DS
20µs PULSE WIDTH
T = 150°C
A
-I
,
D
ra
in
-to-S
ou
rc
e C
ur
ren
t
(A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
J
1
10
100
4
5
6
7
8
9
10
T = 25°C
T = 150°C
J
J
GS
D
A
-I
,
Dr
a
in-to
-S
o
urce Curr
e
nt
(
A
)
-V , Gate-to-Source Voltage (V)
V = -15V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.0
0.3
0.6
0.9
1.2
1.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I
, R
e
ve
rse
Dr
a
in
C
u
rr
e
n
t
(A)
-V , Source-to-Drain Voltage (V)
AUIRF7379Q
7
2015-9-30
Fig 15.
Normalized On-Resistance
Vs. Temperature
Fig 16.
Typical On-Resistance Vs.
Drain Current
Fig. 17 Typical On-Resistance Vs. Gate Voltage
P-Channel
0.0
0.5
1.0
1.5
2.0
-60 -40
-20
0
20
40
60
80
100 120 140 160
J
T , Junction Temperature (°C)
R
,
Dr
ai
n-
to
-So
ur
ce
O
n
R
es
is
ta
n
ce
DS
(o
n
)
(N
o
rma
lize
d)
A
V = -10V
GS
I = -3.0A
D
AUIRF7379Q
8
2015-9-30
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
P-Channel
Fig 18. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1
10
100
C, Ca
pa
ci
tan
ce
(
p
F
)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
al
R
esponse
(Z
)
1
thJ
A
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7379Q
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2015-9-30
SO-8 Part Marking Information
SO-8 Package Outline
(Dimensions are shown in millimeters (inches)
e 1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
M IN
M AX
M ILLIM ETERS
IN C H ES
M IN
M AX
D IM
8°
e
c
.0075
.0098
0.19
0.25
.025 BASIC
0.635 BASIC
8
7
5
6
5
D
B
E
A
e
6X
H
0.25 [ .010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [ .010]
C A B
e1
A
A1
8X b
C
0.10 [ .004]
4
3
1
2
F O O T P R I N T
8 X 0 . 7 2 [ . 0 2 8 ]
6 . 4 6 [ . 2 5 5 ]
3 X 1 . 2 7 [ . 0 5 0 ]
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
N O T E S :
1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .
5 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .
7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O
A S U B S T R A T E .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] .
8 X 1 . 7 8 [ . 0 7 0 ]
AUIRF7379Q
10
2015-9-30
SO-8 Tape and Reel (
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.