AUIRF7342Q
V
DSS
-55V
R
DS(on)
max.
0.105
I
D
-3.4A
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
Features
Advanced Planar Technology
Low
On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
1
2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
V
DS
Drain-Source
Voltage
-55 V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
-3.4
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ -10V
-2.7
I
DM
Pulsed Drain Current -27
P
D
@T
A
= 25°C
Maximum Power Dissipation 2.0
W
P
D
@T
A
= 70°C
Maximum Power Dissipation
1.3
Linear Dearating Factor
0.016
mW°/C
V
GS
Gate-to-Source Voltage
± 20
V
V
GSM
Gate-to-Source Voltage Single Pulse tp < 10µs 30
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 114
mJ
dv/dt
Peak Diode Recovery dv/dt 5.0
V/ns
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
°C/W
R
JA
Junction-to-Ambient –––
62.5
SO-8
AUIRF7342Q
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRF7342Q
SO-8
Tape and Reel
4000
AUIRF7342QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
AUIRF7342Q
2
2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 20mH, R
G
= 25
, I
AS
= -3.4A. (See Fig. 8)
I
SD
-3.4A, di/dt 150A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300µs; duty cycle 2%.
When mounted on 1" square copper board , t
10sec.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
––– –––
V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– -0.054 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 0.095 0.105
V
GS
= -10V, I
D
= -3.4A
––– 0.150 0.170
V
GS
= -4.5V, I
D
= -2.7A
V
GS(th)
Gate Threshold Voltage
-1.0
––– -3.0
V V
DS
= V
GS
, I
D
= -250µA
gfs
Forward Trans conductance
3.3
––– –––
S V
DS
= -10V, I
D
= -3.1A
I
DSS
Drain-to-Source Leakage Current
––– ––– -2.0
µA
V
DS
= -55V, V
GS
= 0V
––– ––– -25
V
DS
= -55V,V
GS
= 0V,T
J
=55°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage
–––
––– 100
V
GS
= 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
26
38
nC
I
D
= -3.1A
Q
gs
Gate-to-Source Charge –––
3.0
4.5
V
DS
= -44V
Q
gd
Gate-to-Drain Charge
–––
8.4
13
V
GS
= -10V, See Fig.10
t
d(on)
Turn-On Delay Time
–––
14
22
ns
V
DD
= -28V
t
r
Rise Time
–––
10
15
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
–––
43
64
R
G
= 6.0
t
f
Fall Time
–––
22
32
R
D
= 16
C
iss
Input Capacitance
–––
690 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
210 –––
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
–––
86
–––
ƒ = 1.0MHz, See Fig.9
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– -2.0
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -27
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
––– -1.2
V T
J
= 25°C,I
S
= -2.0A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
54
80
ns T
J
= 25°C ,I
F
= -2.0A,
Q
rr
Reverse Recovery Charge
–––
85
130
nC di/dt = 100A/µs
AUIRF7342Q
3
2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
0.1
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP -15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
BOTTOM
-3.0V
60µs PULSE WIDTH
Tj = -40°C
-3.0V
0.1
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
VGS
TOP -15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
BOTTOM
-3.0V
60µs PULSE WIDTH
Tj = 25°C
-3.0V
0.1
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
, D
ra
in
-t
o-
S
ou
rc
e
C
u
rr
en
t (
A
)
-3.0V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP -15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
BOTTOM
-3.0V
Fig. 4
Typical Transfer Characteristics
1
2
3
4
5
6
7
-VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
-I
D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 150°C
VDS = -25V
60µs PULSE WIDTH
AUIRF7342Q
4
2015-9-30
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig. 7 Typical On-Resistance Vs. Gate Voltage
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R
, D
ra
in
-to-
S
ourc
e O
n R
es
is
ta
nc
e
(No
rma
liz
ed)
J
DS(
on
)
°
V
=
I =
GS
D
-10V
-3.4 A
25
50
75
100
125
150
0
50
100
150
200
250
300
Starting T , Junction Temperature
( C)
E
, Si
ngl
e
Pu
ls
e
A
vala
nche Ener
gy
(m
J)
J
AS
°
ID
TOP
BOTTOM
-1.5A
-2.7A
-3.4A
AUIRF7342Q
5
2015-9-30
Fig. 11 Typical Source-Drain Diode
Forward Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig. 12 Maximum Safe Operating Area
Fig 10. Typical Gate Charge Vs.
Gate-to-Source
Voltage
1
10
100
0
240
480
720
960
1200
-V , Drain-to-Source Voltage (V)
C
, C
apa
ci
ta
nc
e
(pF
)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V
,
G
a
te-t
o
-S
o
u
rc
e
V
o
lta
ge
(V
)
G
GS
I =
D
-3.1A
V
= -12V
DS
V
= -30V
DS
V
= -48V
DS
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
-VSD, Source-to-Drain Voltage (V)
1.0
10
100
-I
S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
VGS = 0V
TJ = -40°C
TJ = 25°C
TJ = 150°C
1
10
100
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
-I
D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
AUIRF7342Q
6
2015-9-30
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 13.
Maximum Drain Current vs.
Ambient Temperature
25
50
75
100
125
150
TA , Ambient Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-I
D
,
D
ra
in
C
ur
re
nt
(
A
)
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Th
er
m
al
R
e
sp
on
se
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7342Q
7
2015-9-30
SO-8 Part Marking Information
SO-8 Package Outline
(Dimensions are shown in millimeters (inches)
e 1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
M IN
M AX
M ILLIM ETERS
IN C H ES
M IN
M AX
D IM
8°
e
c
.0075
.0098
0.19
0.25
.025 BASIC
0.635 BASIC
8
7
5
6
5
D
B
E
A
e
6X
H
0.25 [ .010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [ .010]
C A B
e1
A
A1
8X b
C
0.10 [ .004]
4
3
1
2
F O O T P R I N T
8 X 0 . 7 2 [ . 0 2 8 ]
6 . 4 6 [ . 2 5 5 ]
3 X 1 . 2 7 [ . 0 5 0 ]
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
N O T E S :
1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .
5 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .
7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O
A S U B S T R A T E .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] .
8 X 1 . 7 8 [ . 0 7 0 ]
AUIRF7342Q
8
2015-9-30
SO-8 Tape and Reel (
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
AUIRF7342Q
9
2015-9-30
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
ESD
Machine Model
Class M2 (+/- 200V)
†
AEC-Q101-002
Human Body Model
Class H1A (+/- 500V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1125V)
†
AEC-Q101-005
RoHS Compliant
Yes
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/30/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
3/27/2014
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
† Highest passing voltage.