AUIRF7313Q
V
DSS
30V
R
DS(on)
typ.
23m
I
D
6.9A
max.
29m
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Features
Advanced Planar Technology
Dual N Channel MOSFET
Low
On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
1
2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
V
DS
Drain-Source
Voltage
30 V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
6.9
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
5.8
I
DM
Pulsed Drain Current 58
P
D
@T
A
= 25°C
Maximum Power Dissipation
2.4
W
Linear Derating Factor
0.02
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 450
mJ
dv/dt
Peak Diode Recovery dv/dt 3.6
V/ns
T
J
Operating Junction and
-55 to + 175
°C
T
STG
Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
–––
20
R
JA
Junction-to-Ambient –––
62.5
°C/W
SO-8
AUIRF7313Q
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRF7313Q
SO-8
Tape and Reel
4000
AUIRF7313QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
AUIRF7313Q
2
2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, Starting T
J
= 25°C, L = 76mH, R
G
= 50
, I
AS
= 3.5A
V
GS
=10V. Part not recommended for use above this value.
I
SD
3.5A, di/dt 590A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle 2%.
When mounted on 1 inch square copper board.
R
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
––– –––
V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.03 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 23 29
m
V
GS
= 10V, I
D
= 6.9A
––– 32 46
V
GS
= 4.5V, I
D
= 5.5A
V
GS(th)
Gate Threshold Voltage
1.0
–––
3.0
V V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
7.5
––– –––
S V
DS
= 15V, I
D
= 3.5A
I
DSS
Drain-to-Source Leakage Current
––– ––– 1.0
µA
V
DS
= 24V, V
GS
= 0V
––– ––– 25
V
DS
= 24V,V
GS
= 0V,T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
––– -100
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
22
33
nC
I
D
= 3.5A
Q
gs
Gate-to-Source Charge –––
2.6
3.9
V
DS
= 15V
Q
gd
Gate-to-Drain Charge
–––
6.8
10
V
GS
= 10V
t
d(on)
Turn-On Delay Time
–––
3.7
–––
ns
V
DD
= 15V
t
r
Rise Time
–––
7.3
–––
I
D
= 3.5A
t
d(off)
Turn-Off Delay Time
–––
21
–––
R
G
= 6.8
t
f
Fall Time
–––
11
–––
V
GS
= 10V
C
iss
Input Capacitance
–––
755 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
310 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
–––
120 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 3.0
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 58
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.0
V T
J
= 25°C,I
S
= 3.5A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
27
40
ns T
J
= 25°C ,I
F
= 3.5A,
Q
rr
Reverse Recovery Charge
–––
43
65
nC di/dt = 100A/µs
AUIRF7313Q
3
2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
, D
ra
in
-t
o
-S
ou
rc
e
C
u
rr
en
t (
A
)
VGS
TOP 15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
BOTTOM
2.8V
60µs PULSE WIDTH Tj = 25°C
2.8V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
I D
, D
ra
in
-t
o
-S
ou
rc
e
C
u
rr
en
t (
A
)
VGS
TOP 15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
BOTTOM
2.8V
60µs PULSE WIDTH
Tj = 175°C
2.8V
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VDS = 15V
60µs PULSE WIDTH
-60
-20
20
60
100
140
180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 6.9A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 3.5A
AUIRF7313Q
4
2015-9-30
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Maximum Avalanche Energy vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
0.10
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µs
1ms
10ms
DC
25
50
75
100
125
150
175
TA , Ambient Temperature (°C)
0
1
2
3
4
5
6
7
I D
,
D
ra
in
C
ur
re
nt
(
A
)
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
400
800
1200
1600
2000
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 1.0A
1.6A
BOTTOM 3.5A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
T
he
rm
al
R
es
po
ns
e
(
Z
th
JA
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
AUIRF7313Q
5
2015-9-30
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 13. Typical On-Resistance Vs. Gate
Voltage
0
10
20
30
40
50
60
ID , Drain Current (A)
10
20
30
40
50
60
70
80
R
D
S
(
o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
m
)
VGS= 4.5V
VGS= 10V
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
10
20
30
40
50
60
70
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
TJ = 25°C
TJ = 125°C
ID = 3.5A
AUIRF7313Q
6
2015-9-30
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
R G
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 15a. Unclamped Inductive Test Circuit
Fig 15b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
1K
VCC
DUT
0
L
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
AUIRF7313Q
7
2015-9-30
SO-8 Part Marking Information
SO-8 Package Outline
(Dimensions are shown in millimeters (inches)
e 1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
M IN
M AX
M ILLIM ETERS
IN C H ES
M IN
M AX
D IM
8°
e
c
.0075
.0098
0.19
0.25
.025 BASIC
0.635 BASIC
8
7
5
6
5
D
B
E
A
e
6X
H
0.25 [ .010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [ .010]
C A B
e1
A
A1
8X b
C
0.10 [ .004]
4
3
1
2
F O O T P R I N T
8 X 0 . 7 2 [ . 0 2 8 ]
6 . 4 6 [ . 2 5 5 ]
3 X 1 . 2 7 [ . 0 5 0 ]
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
N O T E S :
1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .
5 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .
7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O
A S U B S T R A T E .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] .
8 X 1 . 7 8 [ . 0 7 0 ]
AUIRF7313Q
8
2015-9-30
SO-8 Tape and Reel (
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
AUIRF7313Q
9
2015-9-30
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
ESD
Machine Model
Class M1B (+/- 100V)
†
AEC-Q101-002
Human Body Model
Class H1A (+/- 500V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†
AEC-Q101-005
RoHS Compliant
Yes
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/30/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
3/27/2014
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 7.
Updated data sheet with new IR corporate template
† Highest passing voltage.