AUIRF7304Q
V
DSS
-20V
R
DS(on)
max.
0.090
I
D
-4.3A
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Features
Advanced Planar Technology
Low
On-Resistance
Dual P Channel MOSFET
Dynamic dv/dt Rating
Logic Level
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
1
2015-11-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ -4.5V
-4.7
A
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ -4.5V
-4.3
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ -4.5V
-3.4
I
DM
Pulsed Drain Current -17
P
D
@T
A
= 25°C
Maximum Power Dissipation 2.0
W
Linear Derating Factor
0.016
V
GS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt -5.0
V/ns
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
W°/C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
°C/W
R
JA
Junction-to-Ambient –––
62.5
SO-8
AUIRF7304Q
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRF7304Q
SO-8
Tape and Reel
4000
AUIRF7304QTR
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
AUIRF7304Q
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2015-11-16
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
I
SD
-2.2A, di/dt 50A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300µs; duty cycle 2%.
When mounted on 1 inch square copper board , t
sec.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
––– –––
V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– -0.012 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.090
V
GS
= -4.5V, I
D
= -2.2A
––– ––– 0.140
V
GS
= -2.7V, I
D
= -1.8A
V
GS(th)
Gate Threshold Voltage
-0.70 ––– -1.5
V V
DS
= V
GS
, I
D
= -250µA
gfs
Forward Trans conductance
4.0
––– –––
S V
DS
= -16V, I
D
= -2.2A
I
DSS
Drain-to-Source Leakage Current
––– ––– -1.0
µA
V
DS
= - 16V, V
GS
= 0V
––– ––– -25
V
DS
= -16V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– -100
nA
V
GS
= -12V
Gate-to-Source Reverse Leakage
–––
––– 100
V
GS
= 12V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
–––
22
nC
I
D
= -2.2A
Q
gs
Gate-to-Source Charge
–––
–––
3.3
V
DS
= -16V
Q
gd
Gate-to-Drain Charge
–––
–––
9.0
V
GS
= -4.5V, See Fig.6 & 12
t
d(on)
Turn-On Delay Time
–––
8.4
–––
ns
V
DD
= -10V
t
r
Rise Time
–––
26
–––
I
D
= -2.2A
t
d(off)
Turn-Off Delay Time
–––
51
–––
R
G
= 6.0
t
f
Fall Time
–––
33
–––
R
D
= 4.5
See Fig.10
L
D
Internal Drain Inductance
–––
4.0
–––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
–––
6.0
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
610 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
310 –––
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
–––
170 –––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– -2.5
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -17
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
––– -1.0
V T
J
= 25°C,I
S
= -1.8A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
56
84
ns T
J
= 25°C ,I
F
= -2.2A,
Q
rr
Reverse Recovery Charge
–––
71
110
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF7304Q
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2015-11-16
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
Vs. Temperature
Fig. 1 Typical Output Characteristics
0.1
1
10
100
0.01
0.1
1
10
100
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I
, Dra
in
-to
-S
ou
rc
e
Cu
rr
en
t (A
)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.1
1
10
100
0.01
0.1
1
10
100
D
DS
20µs PULSE WIDTH
T = 150°C
A
-I
, Dra
in-to
-S
ou
rc
e C
ur
ren
t (A
)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.1
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I
, D
ra
in-to-
S
ourc
e
Cu
rre
nt (
A
)
-V , Gate-to-Source Voltage (V)
V = -15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60
-40
-20
0
20
40
60
80
100 120 140 160
J
T , Junction Temperature (°C)
R
, D
rai
n-
to
-S
ou
rc
e On
R
es
ist
an
ce
DS
(o
n)
(N
or
m
al
ize
d)
A
I = -3.6A
D
V = -4.5V
GS
AUIRF7304Q
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2015-11-16
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-Drain Diode
Forward Voltage
0
500
1000
1500
1
10
100
C, C
ap
ac
ita
nc
e
(pF
)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
5
10
15
20
25
G
GS
A
FOR TEST CIRCUIT
SEE FIGURE 12
-V
, Ga
te
-t
o-
S
ou
rc
e V
olta
ge
(
V
)
Q , Total Gate Charge (nC)
I = -2.2A
V = -16V
D
DS
0.1
1
10
100
0.3
0.6
0.9
1.2
1.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I
, R
ev
er
se
Drain Cu
rr
en
t (A
)
-V , Source-to-Drain Voltage (V)
1
10
100
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I
,
D
rai
n C
urr
en
t (A
)
I , Dra
in
C
ur
re
nt (
A
)
DS
D
1ms
10ms
AUIRF7304Q
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2015-11-16
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature
( C)
-I
, Dra
in Cu
rr
en
t (A)
°
C
D
Fig 10b. Switching Time Waveforms
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Th
er
m
al
R
es
pon
se
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7304Q
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2015-11-16
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
Fig 13. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
AUIRF7304Q
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2015-11-16
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
SO-8 Part Marking Information
SO-8 Package Outline
(Dimensions are shown in millimeters (inches)
e 1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
M IN
M AX
M ILLIM ETERS
IN C H ES
M IN
M AX
D IM
8°
e
c
.0075
.0098
0.19
0.25
.025 BASIC
0.635 BASIC
8
7
5
6
5
D
B
E
A
e
6X
H
0.25 [ .010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [ .010]
C A B
e1
A
A1
8X b
C
0.10 [ .004]
4
3
1
2
F O O T P R I N T
8 X 0 . 7 2 [ . 0 2 8 ]
6 . 4 6 [ . 2 5 5 ]
3 X 1 . 2 7 [ . 0 5 0 ]
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
N O T E S :
1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .
5 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .
7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O
A S U B S T R A T E .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] .
8 X 1 . 7 8 [ . 0 7 0 ]
AUIRF7304Q
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2015-11-16
SO-8 Tape and Reel (
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
AUIRF7304Q
9
2015-11-16
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
ESD
Machine Model
Class M1B (+/- 100V)
†
AEC-Q101-002
Human Body Model
Class H0 (+/- 250V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†
AEC-Q101-005
RoHS Compliant
Yes
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
11/16/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
† Highest passing voltage.