AUIRF7207Q
1
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Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
V
DSS
-20V
R
DS(on)
max
0.06
I
D
-5.4A
Parameter Max.
Units
V
DS
Drain-to-Source Voltage
-20
V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
-5.4
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ -10V
-4.3
I
DM
Pulsed Drain Current -43
P
D
@T
A
= 25°C
Power Dissipation
2.5
W
P
D
@T
A
= 70°C
Power Dissipation
1.6
Linear Derating Factor
0.02
W/°C
V
GS
Gate-to-Source Voltage
± 12
V
V
GSM
Gate-to-Source Voltage Single Pulse tp<10µs
-16
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 140 mJ
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
Features
Advanced Process Technology
Low On-Resistance
Logic Level Gate Drive
P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
Description
Specifically designed for Automotive applications, this cellular design
of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JA
Junction-to-Ambient
–––
50
°C/W
Base part number
Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7207Q
SO-8
Tape and Reel
2500 AUIRF7207QTR
HEXFET
®
Power MOSFET
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
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Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– -0.011 –––
V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.06
V
GS
= -4.5V, I
D
= -5.4A
––– ––– 0.125
V
GS
= -2.7V, I
D
= -2.7A
V
GS(th)
Gate Threshold Voltage
-0.7
–––
-1.6
V
V
DS
= V
GS
, I
D
= -250µA
gfs Forward
Transconductance
8.3
–––
–––
S
V
DS
= -10V, I
D
= -5.4A
I
DSS
Drain-to-Source Leakage Current
––– ––– -1.0
µA
V
DS
= -16V, V
GS
= 0V
––– ––– -25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– -100
nA
V
GS
= 12V
Gate-to-Source Reverse Leakage
–––
–––
100
V
GS
= -12V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter
Min.
Typ.
Max.
Units
Conditions
Q
g
Total Gate Charge
–––
15
22
nC
I
D
= -5.4A
Q
gs
Gate-to-Source Charge –––
2.2
3.3
V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge
–––
5.7
8.6
V
GS
= -4.5V
t
d(on)
Turn-On Delay Time
–––
11
–––
ns
V
DD
= -10V
t
r
Rise Time
–––
24
–––
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
–––
43
–––
R
G
= 6.0
t
f
Fall Time
–––
41
–––
R
D
= 10
C
iss
Input Capacitance
–––
780
–––
pF
V
GS
= 0V
C
oss
Output Capacitance
–––
410
–––
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
–––
200
–––
ƒ = 1.0 MHz
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
–––
–––
-3.1
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
–––
–––
-43
A
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
-1.0
V
T
J
= 25°C, I
S
= -3.1A, V
GS
= 0V
dv/dt Peak
Diode
Recovery
–––
5.0
–––
V/ns
T
J
= 175°C, I
S
= -3.1A, V
DS
= -20V
t
rr
Reverse Recovery Time
––– 42 63 ns T
J
= 25°C, I
F
= -3.1A
Q
rr
Reverse Recovery Charge
––– 50 75 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 9.6mH, R
G
= 25
, I
AS
= -5.4A.
I
SD
-5.4A, di/dt -79A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width
300µs; duty cycle 2%.
When mounted on 1 inch square copper board, t<10 sec.
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Fig. 2 Typical Output Characteristics
1
10
100
0
400
800
1200
1600
-V , Drain-to-Source Voltage (V)
C,
Ca
p
a
ci
ta
n
ce
(
p
F)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
Fig. 3
Typical Transfer Characteristics
0
5
10
15
20
25
30
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V
,
G
a
te
-t
o-So
u
rc
e
V
o
ltag
e (
V
)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-5.4A
V
=-10V
DS
Fig. 4
Normalized On-Resistance vs. Temperature
1
10
100
2.0
3.0
4.0
5.0
6.0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I
,
D
ra
in
-t
o
-So
u
rc
e C
urre
nt
(A
)
GS
D
T = 25 C
J
°
T = 150 C
J
°
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1
10
100
0.1
1
10
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I
, D
rain
-t
o
-So
u
rc
e C
u
rre
nt
(A
)
DS
D
-2.25V
1
10
100
0.1
1
10
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V , Drain-to-Source Voltage (V)
-I
,
D
ra
in
-t
o-S
ou
rc
e
C
u
rre
n
t (A
)
DS
D
-2.25V
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature
( C)
R
,
D
rai
n-
to
-S
o
ur
ce O
n R
e
si
st
an
ce
(N
or
m
a
liz
e
d)
J
DS
(o
n)
°
V
=
I =
GS
D
-10V
-5.4A
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25
50
75
100
125
150
0
100
200
300
400
Starting T , Junction Temperature
( C)
E
,
Sing
le Pul
se Av
al
anc
he
Energy
(m
J)
J
AS
°
ID
TOP
BOTTOM
-2.4A
-4.3A
-5.4A
Fig 8. Maximum Safe Operating Area
Fig 10. Maximum Avalanche Energy vs. Drain Current
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature
( C)
-I
,
D
rai
n
C
u
rr
en
t (
A
)
°
C
D
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
0.1
1
10
100
0.4
0.6
0.7
0.9
1.1
1.2
1.4
-V ,Source-to-Drain Voltage (V)
-I
, R
e
ve
rs
e
D
ra
in
C
u
rr
e
n
t (A
)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I
,
D
rai
n C
ur
ren
t (
A
)
I
, D
ra
in
C
u
rr
e
n
t (
A
)
DS
D
100us
1ms
10ms
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
al
R
es
pon
se
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(T HERMAL RESPONSE)
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Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
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Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
F O O T P R I N T
8 X 0 . 7 2 [ . 0 2 8 ]
6 . 4 6 [ . 2 5 5 ]
3 X 1 . 2 7 [ . 0 5 0 ]
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
N O T E S :
1 . D I M E N S I O N I N G & T O L E R A N C I N G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2 . C O N T R O L L I N G D I M E N S I O N : M I L L I M E T E R
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S [ I N C H E S ] .
5 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
6 D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .
7 D I M E N S I O N I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O
A S U B S T R A T E .
M O L D P R O T R U S I O N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] .
8 X 1 . 7 8 [ . 0 7 0 ]
e 1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
M IN
M AX
M ILLIM ETERS
IN C H ES
M IN
M AX
D IM
8°
e
c
.0075
.0098
0.19
0.25
.025 BASIC
0.635 BASIC
8
7
5
6
5
D
B
E
A
e
6X
H
0.25 [ .010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [ .010]
C A B
e1
A
A1
8X b
C
0.10 [ .004]
4
3
1
2
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
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SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
AUIRF7207Q
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Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
ESD
Machine Model
Class M1B (+/- 100V)
†
AEC-Q101-002
Human Body Model
Class H1A (+/- 500V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†
AEC-Q101-005
RoHS Compliant
Yes
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
4/3/2014
Added "Logic Level Gate Drive" bullet in the features section on page 1
11/16/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.