AUIRF6215S Product Datasheet

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AUIRF6215S 

Absolute Maximum Ratings 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress 
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not 
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance 
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless 
otherwise specified. 

Features 

  Advanced Planar Technology 

 Low 

On-Resistance 

 P-Channel 

MOSFET 

  Dynamic dv/dt Rating 
  175°C Operating Temperature 

 Fast 

Switching 

  Fully Avalanche Rated 

  Repetitive Avalanche Allowed up to Tjmax 

  Lead-Free, RoHS Compliant 

  Automotive Qualified *  

Description 

Specifically designed for Automotive applications, this cellular design of 
HEXFET® Power MOSFETs utilizes the latest processing techniques to 
achieve low on-resistance per silicon area. This benefit combined with the 
fast switching speed and ruggedized device design that HEXFET power 
MOSFETs are well known for, provides the designer with an extremely 
efficient and reliable device for use in Automotive and a wide variety of other 
applications. 

 

2015-11-13 

HEXFET® is a registered trademark of Infineon. 
*Qualification standards can be found at 

www.infineon.com

 

AUTOMOTIVE GRADE 

HEXFET

® 

Power MOSFET 

V

DSS 

-150V 

R

DS(on)

   max. 

0.29

 

I

D  

-13A 

 

D

2

Pak 

AUIRF6215S 

G D  S 

Gate Drain Source 

Base part number 

Package Type 

Standard Pack 

Orderable Part Number   

Form 

Quantity 

AUIRF6215S  

D

2

-Pak    

Tube  

50 

AUIRF6215S 

Tape and Reel Left  

800 

AUIRF6215STRL 

Symbol Parameter 

Max. 

Units 

I

D

 @ T

C

 = 25°C 

Continuous Drain Current, V

GS

 @ -10V  

-13 

I

D

 @ T

C

 = 100°C 

Continuous Drain Current, V

GS

 @ -10V  

-9.0 

I

DM 

Pulsed Drain Current  -44 

P

D

 @T

A

 = 25°C 

Maximum Power Dissipation   

3.8 

P

D

 @T

C

 = 25°C 

Maximum Power Dissipation   

110 

  

Linear Derating Factor 

0.71 

W/°C 

V

GS 

Gate-to-Source Voltage 

 ± 20 

E

AS  

Single Pulse Avalanche Energy (Thermally Limited)  310 

mJ  

I

AR 

Avalanche Current  -6.6 

E

AR 

Repetitive Avalanche Energy  11 

mJ 

dv/dt 

Peak Diode Recovery  -5.0 

V/ns 

T

J  

Operating Junction and 

-55  to + 175 

 

T

STG 

Storage Temperature Range 

  

°C 

  

Soldering Temperature, for 10 seconds (1.6mm from case) 

300 

 

W  

Thermal Resistance  

Symbol Parameter 

Typ. 

Max. 

Units 

R

JC

  

Junction-to-Case ––– 

1.4 

°C/W   

R

JA

  

Junction-to-Ambient ( PCB Mount, steady state)   

40 

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AUIRF6215S 

 

2015-11-13 

Notes:

 Repetitive rating;  pulse width limited by max. junction temperature. (See fig.11) 

  Limited by T

Jmax, 

starting  T

J

 = 25°C, L = 14mH, R

G

 = 25

, I

AS

 = -6.6A. (See fig.12) 

   I

SD

 

-6.6A, di/dt 620A/µs, V

DD

 

V

(BR)DSS

, T

J

 

 175°C. 

 Pulse width 

300µs; duty cycle  2%. 

  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application  

 

note #AN-994  



R

 is measured at T

J

 of approximately 90°C 

Static @ T

J

 = 25°C (unless otherwise specified) 

  

Parameter Min. 

Typ. 

Max. 

Units 

Conditions 

V

(BR)DSS 

Drain-to-Source Breakdown Voltage 

-150  –––  ––– 

V  V

GS

 = 0V, I

D

 = -250µA 

V

(BR)DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

–––  -0.20  –––  V/°C  Reference to 25°C, I

D

 = -1mA  

R

DS(on) 

    

Static Drain-to-Source On-Resistance     

––– ––– 0.29 



V

GS

 = -10V, I

D

 = -6.6A 

––– ––– 0.58 

V

GS

 = -10V, I

D

 = -6.6A,T

J

 =150°C 

V

GS(th) 

Gate Threshold Voltage 

-2.0  –––  -4.0 

V  V

DS

 = V

GS

, I

D

 = -250µA 

g

fs 

Forward Trans conductance 

3.6  –––  ––– 

S  V

DS

 = -25V, I

D

 = -6.6A 

I

DSS 

  

Drain-to-Source Leakage Current   

––– –––  -25 

µA 

V

DS

 = -150V, V

GS

 = 0V 

––– ––– -250 

V

DS

 = -120V,V

GS

 = 0V,T

J

 =150°C 

I

GSS 

  

Gate-to-Source Forward Leakage 

–––  –––  -100 

nA   

V

GS

 = -20V 

 

Gate-to-Source Reverse Leakage 

–––  –––  100 

V

GS

 = 20V 

Dynamic  Electrical Characteristics @ T

J

 = 25°C (unless otherwise specified) 

Q

Total Gate Charge  

–––  ––– 

66 

nC  

I

D

 = -6.6A 

Q

gs 

Gate-to-Source Charge 

–––  ––– 

8.1 

V

DS

 = -120V 

Q

gd 

Gate-to-Drain Charge 

–––  ––– 

35 

V

GS

 = -10V 

t

d(on) 

Turn-On Delay Time 

––– 

14 

––– 

ns 

V

DD

 = -75V 

t

Rise Time 

––– 

36 

––– 

I

D

 = -6.6A 

t

d(off) 

Turn-Off Delay Time 

––– 

53 

––– 

R

G

= 6.8



t

Fall Time 

––– 

37 

––– 

R

D

= 12

 

L

Internal Source Inductance 

–––  7.5 

––– 

nH   

Between lead,6mm (0.25in.) 
from package and center 
of die contact 

C

iss 

Input Capacitance 

–––  860  ––– 

pF  

V

GS

 = 0V 

C

oss 

Output Capacitance 

–––  220  ––– 

V

DS

 = -25V 

C

rss 

Reverse Transfer Capacitance 

–––  130  ––– 

ƒ = 1.0MHz, See Fig.5 

Diode Characteristics  

  

        Parameter 

Min.  Typ.  Max.  Units 

Conditions 

I

  

Continuous Source Current  

––– –––  -11 

MOSFET symbol 

(Body Diode) 

showing  the 

I

SM 

  

Pulsed Source Current 

––– –––  -44 

integral reverse 

(Body Diode)

p-n junction diode. 

V

SD 

Diode Forward Voltage 

–––  –––  -1.6 

V  T

J

 = 25°C,I

= -6.6A,V

GS

 = 0V 

t

rr  

Reverse Recovery Time  

–––  160  240 

ns   T

J

 = 25°C ,I

F

 = -6.6A  

Q

rr  

Reverse Recovery Charge  

–––  1.2 

1.7 

µC    di/dt = 100A/µs 

t

on 

Forward Turn-On Time 

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

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AUIRF6215S 

 

2015-11-13 

Fig. 2 Typical Output Characteristics 

Fig. 3 

Typical Transfer Characteristics

 

 

Fig. 1 Typical Output Characteristics 

Fig. 4 Normalized On-Resistance 

vs. Temperature 

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AUIRF6215S 

 

2015-11-13 

Fig 5.  Typical Capacitance vs. Drain-to-Source Voltage

 

 

Fig 8.  Maximum Safe Operating Area  

Fig 6.  Typical Gate Charge vs. Gate-to-Source Voltage

 

 

Fig. 7 Typical Source-to-Drain Diode 

 Forward Voltage 

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AUIRF6215S 

 

2015-11-13 

 

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case  

Fig 9.  Maximum Drain Current vs. 

 Case Temperature 

Fig 10a.  Switching Time Test Circuit 

Fig 10b.  Switching Time Waveforms 

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AUIRF6215S 

 

2015-11-13 

Fig 12c. Maximum Avalanche Energy vs. Drain Current 

Fig 12a.  Unclamped Inductive Test Circuit 

Fig 12b.  Unclamped Inductive Waveforms 

Fig 13b.  Gate Charge Test Circuit 

Fig 13a.   Gate Charge Waveform 

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AUIRF6215S 

 

2015-11-13 

 

Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs 

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AUIRF6215S 

 

2015-11-13 

 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

D

2

Pak (TO-263AB) Part Marking Information 

YWWA 

XX    

    XX 

Date Code 

Y= Year 

WW= Work Week 

AUF6215S 

Lot Code 

Part Number 

IR Logo 

D

2

Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) 

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AUIRF6215S 

 

2015-11-13 

D

2

Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

3

4

4

TRR

FEED DIRECTION

1.85 (.073)
1.65 (.065)

1.60 (.063)
1.50 (.059)

4.10 (.161)
3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)
10.70 (.421)

16.10 (.634)
15.90 (.626)

1.75 (.069)
1.25 (.049)

11.60 (.457)
11.40 (.449)

15.42 (.609)
15.22 (.601)

4.72 (.136)
4.52 (.178)

24.30 (.957)
23.90 (.941)

0.368 (.0145)
0.342 (.0135)

1.60 (.063)
1.50 (.059)

13.50 (.532)
12.80 (.504)

330.00
(14.173)
  MAX.

27.40 (1.079)
23.90 (.941)

60.00 (2.362)
      MIN.

30.40 (1.197)
      MAX.

26.40 (1.039)
24.40 (.961)

NOTES :
1.   COMFORMS TO EIA-418.
2.   CONTROLLING DIMENSION: MILLIMETER.
3.   DIMENSION MEASURED @ HUB.
4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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AUIRF6215S 

10 

 

2015-11-13 

 

†  Highest passing voltage. 

Published by 
Infineon Technologies AG 
81726 München, Germany 

© 

Infineon Technologies AG 2015 

All Rights Reserved. 
 
IMPORTANT NOTICE
 
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics 
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any 
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and 
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third 
party.  
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this 
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of 
the product of Infineon Technologies in customer’s applications.  
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of 
customer’s technical departments to evaluate the suitability of the product for the intended application and the 
completeness of the product information given in this document with respect to such application.   
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest 
Infineon Technologies office (

www.infineon.com

). 

WARNINGS 
Due to technical requirements products may contain dangerous substances. For information on the types in question 
please contact your nearest Infineon Technologies office. 
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized 
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a 
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.  

Qualification Information  

Qualification Level 

Automotive 

(per AEC-Q101)  

Comments: This part number(s) passed Automotive qualification. Infineon’s  
Industrial and Consumer qualification level is granted by extension of the higher 
Automotive level. 

D

2

-Pak  

MSL1  

ESD 

Machine Model  

Class M3 (+/- 400V)

 

 

AEC-Q101-002 

Human Body Model  

Class H1B (+/- 1000V)

 

 

AEC-Q101-001 

Charged Device Model 

Class C5 (+/- 1125V)

 

 

AEC-Q101-005 

RoHS Compliant 

Yes 

 Moisture Sensitivity Level       

Revision History  

Date Comments 

11/13/2015 



Updated datasheet with corporate template 



Corrected ordering table on page 1. 

Maker
Infineon Technologies