AUIRF4905
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low
On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast
Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
1
2015-11-9
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
HEXFET
®
Power MOSFET
V
DSS
-55V
R
DS(on)
max.
0.02
I
D
-74A
G D S
Gate Drain Source
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRF4905
TO-220
Tube
50
AUIRF4905
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
-74
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
-52
I
DM
Pulsed Drain Current -260
P
D
@T
C
= 25°C
Maximum Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 930
mJ
I
AR
Avalanche Current -38
A
E
AR
Repetitive Avalanche Energy 20
mJ
dv/dt
Peak Diode Recovery dv/dt -5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
TO-220
AUIRF4905
S
D
G
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case –––
0.75
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
–––
R
JA
Junction-to-Ambient
–––
62
AUIRF4905
2
2017-09-20
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Starting T
J
= 25°C, L = 1.3mH, R
G
= 25
, I
AS
= -38A. (See Figure 12)
I
SD
-38A, di/dt -270A/µs, V
DD
V
(BR)DSS
, T
J
175°C
Pulse width
300µs; duty cycle 2%.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– -0.05 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.02
V
GS
= -10V, I
D
= -38A
V
GS(th)
Gate Threshold Voltage
-2.0 –––
-4.0
V V
DS
= V
GS
, I
D
= -250µA
gfs
Forward Trans conductance
21
–––
–––
S V
DS
= -25V, I
D
= -38A
I
DSS
Drain-to-Source Leakage Current
––– ––– -25
µA
V
DS
= -55V, V
GS
= 0V
––– ––– -250
V
DS
= -44V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage
–––
–––
100
V
GS
= 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
–––
180
nC
I
D
= -38A
Q
gs
Gate-to-Source Charge
–––
–––
32
V
DS
= -44V
Q
gd
Gate-to-Drain Charge
–––
–––
86
V
GS
= -10V,See Fig 6 and 13
t
d(on)
Turn-On Delay Time
–––
18
–––
ns
V
DD
= -28V
t
r
Rise Time
–––
99
–––
I
D
= -38A
t
d(off)
Turn-Off Delay Time
–––
61
–––
R
G
= 2.5
t
f
Fall Time
–––
96
–––
R
D
= 0.72
See Fig. 10
L
D
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
––– 3400 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
––– 1400 –––
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
–––
640
–––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– -74
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -260
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
-1.6
V T
J
= 25°C,I
S
= -38A,V
GS
= 0V
t
rr
Reverse Recovery Time
–––
89
130
ns T
J
= 25°C ,I
F
= -38A
Q
rr
Reverse Recovery Charge
–––
230
350
nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF4905
3
2017-09-20
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig. 4 Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1
1
10
100
D
DS
20µs PULSE WIDTH
T = 25°C
c
A
-I
,
D
ra
in
-to
-S
ou
rc
e C
urren
t (A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
1
10
100
1000
0.1
1
10
100
D
DS
A
-I
, D
rai
n-
to-
S
our
ce
Cur
ren
t (
A
)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
1000
4
5
6
7
8
9
10
T = 25°C
J
GS
D
A
-I
,
D
rai
n-
to
-S
o
ur
ce C
ur
re
nt
(
A
)
-V , Gate-to-Source Voltage (V)
V = -25V
20µs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
J
T , Junction Temperature (°C)
R
,
Dra
in
-t
o-
S
ou
rc
e On
Re
si
st
an
ce
DS
(o
n)
(N
orm
al
iz
ed
)
A
V = -10V
GS
I = -64A
D
AUIRF4905
4
2017-09-20
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
7000
1
10
100
C,
Cap
ac
ita
nc
e
(p
F)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
40
80
120
160
200
G
GS
A
-V
, G
ate
-to
-S
ou
rce
V
ol
ta
ge
(
V
)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -38A
V = -44V
V = -28V
D
DS
DS
1
10
100
1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
T = 25°C
J
V = 0V
GS
SD
SD
A
-I
, R
ev
er
se D
rai
n Cur
re
nt
(A
)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I
,
D
rai
n C
ur
rent (
A
)
-V , Drain-to-Source Voltage (V)
DS
D
100µs
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
AUIRF4905
5
2017-09-20
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25
50
75
100
125
150
175
0
20
40
60
80
T , Case Temperature
( C)
I ,
D
ra
in
Cu
rr
en
t (A)
°
C
D
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Th
er
m
a
l R
e
spons
e
(Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF4905
6
2017-09-20
Fig 12c. Maximum Avalanche Energy vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
0
500
1000
1500
2000
2500
25
50
75
100
125
150
175
J
E
, S
ing
le
Pu
ls
e A
va
la
nc
he E
ne
rg
y (mJ
)
AS
A
Starting T , Junction Temperature (°C)
I
TOP -16A
-27A
BOTTOM -38A
D
AUIRF4905
7
2017-09-20
Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
AUIRF4905
8
2017-09-20
TO-220 Part Marking Information
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUIRF4905
Lot Code
Part Number
IR Logo
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
AUIRF4905
9
2017-09-20
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
3L-TO-220
N/A
ESD
Machine Model
Class M4 (+/- 425V)
†
AEC-Q101-002
Human Body Model
Class H2 (+/- 4000V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1125V)
†
AEC-Q101-005
RoHS Compliant
Yes
Revision History
Date Comments
09/20/2017
Updated datasheet with corporate template
Corrected typo error on package outline and part marking on page 8.