AUIRF3315S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low
On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast
Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
1
2015-11-13
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
HEXFET
®
Power MOSFET
V
DSS
150V
R
DS(on)
max.
82m
I
D
21A
D
2
Pak
AUIRF3315S
S
D
G
G D S
Gate Drain Source
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
AUIRF3315S
D
2
-Pak
Tube
50
AUIRF3315S
Tape and Reel Left
800
AUIRF3315STRL
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
21
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
15
I
DM
Pulsed Drain Current 84
P
D
@T
A
= 25°C
Maximum Power Dissipation
3.8
P
D
@T
C
= 25°C
Maximum Power Dissipation
94
Linear Derating Factor
0.63
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 350
mJ
I
AR
Avalanche Current 12
A
E
AR
Repetitive Avalanche Energy 9.4
mJ
dv/dt
Peak Diode Recovery 2.5
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
W
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case –––
1.6
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state)
40
AUIRF3315S
2
2015-11-13
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 4.9mH, R
G
= 25
, I
AS
= 12A. (See fig.12)
I
SD
12A, di/dt 140A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
R
is measured at T
J
of approximately 90°C
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
150 ––– –––
V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.187 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– –––
82
m
V
GS
= 10V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage
2.0 –––
4.0
V V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V
DS
= 150V, V
GS
= 0V
––– ––– 250
V
DS
= 120V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage
––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
––– –––
95
nC
I
D
= 12A
Q
gs
Gate-to-Source Charge
––– –––
11
V
DS
= 120V
Q
gd
Gate-to-Drain Charge
––– –––
47
V
GS
= 10V
t
d(on)
Turn-On Delay Time
––– 9.6
–––
ns
V
DD
= 75V
t
r
Rise Time
–––
32
–––
I
D
= 12A
t
d(off)
Turn-Off Delay Time
–––
49
–––
R
G
= 5.1
t
f
Fall Time
–––
38
–––
R
D
= 5.9
L
D
Internal Drain Inductance
––– 4.5
–––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
––– 7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
––– 1300 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
––– 300 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
––– 160 –––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 21
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 84
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
––– –––
1.3
V T
J
= 25°C,I
S
= 12A,V
GS
= 0V
t
rr
Reverse Recovery Time
––– 174 260
ns T
J
= 25°C ,I
F
= 12A
Q
rr
Reverse Recovery Charge
––– 1.2
1.7
µC di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF3315S
3
2015-11-13
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
AUIRF3315S
4
2015-11-13
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
AUIRF3315S
5
2015-11-13
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
AUIRF3315S
6
2015-11-13
Fig 12c. Maximum Avalanche Energy vs. Drain Current
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
AUIRF3315S
7
2015-11-13
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRF3315S
8
2015-11-13
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
D
2
Pak (TO-263AB) Part Marking Information
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUIRF3315S
Lot Code
Part Number
IR Logo
D
2
Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
AUIRF3315S
9
2015-11-13
D
2
Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRF3315S
10
2015-11-13
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D
2
-Pak
MSL1
ESD
Machine Model
Class M4 (+/- 600V)
†
AEC-Q101-002
Human Body Model
Class H1C (+/- 2000V)
†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†
AEC-Q101-005
RoHS Compliant
Yes
Moisture Sensitivity Level
Revision History
Date Comments
11/13/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
Corrected typo in test condition current from “43A” to “12A” for VSD and trr/Qrr on page 2.