AUIRF1324S-7P
G D S
Gate Drain
Source
Base Part Number
Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF1324S-7P
D
2
Pak 7 Pin
Tube
50
AUIRF1324S-7P
V
DSS
24V
R
DS(on)
typ.
0.8m
max.
1.0m
I
D (Silicon Limited)
429A
I
D (Package Limited)
240A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
1
2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at
www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
429
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
303
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
240
I
DM
Pulsed Drain Current 1640
P
D
@T
C
= 25°C
Maximum Power Dissipation
300
W
Linear Derating Factor
2.0
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 230
mJ
I
AR
Avalanche Current
See Fig.14,15, 18a, 18b
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak
Diode
Recovery
1.6
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Symbol Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case –––
0.50
°C/W
R
JA
Junction-to-Ambient –––
40
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
D
2
Pak 7 Pin
AUIRF1324S-7P
2
2015-9-30
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.018mH, R
G
= 25
, I
AS
= 160A, V
GS
=10V. Part not recommended for use above
this value.
I
SD
160A, di/dt 600A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
24
––– –––
V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.023 ––– V/°C Reference to 25°C, I
D
= 5mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 0.80 1.0
m
V
GS
= 10V, I
D
= 160A
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Trans conductance
190
––– –––
S V
DS
= 15V, I
D
= 160A
R
G
Gate Resistance
–––
3.0
–––
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=24V, V
GS
= 0V
––– ––– 250
V
DS
=19V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage
–––
––– 200
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
–––
––– -200
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge
–––
180 252
nC
I
D
= 75A
Q
gs
Gate-to-Source Charge
–––
47
–––
V
DS
= 12V
Q
gd
Gate-to-Drain Charge
–––
58
–––
V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) –––
122
–––
t
d(on)
Turn-On Delay Time
–––
19
–––
ns
V
DD
= 16V
t
r
Rise Time
–––
240 –––
I
D
= 160A
t
d(off)
Turn-Off Delay Time
–––
86
–––
R
G
= 2.7
t
f
Fall Time
–––
93
–––
V
GS
= 10V
C
iss
Input Capacitance
––– 7700 –––
pF
V
GS
= 0V
C
oss
Output Capacitance
––– 3380 –––
V
DS
= 19V
C
rss
Reverse Transfer Capacitance
––– 1930 –––
ƒ = 1.0MHz, See Fig. 5
C
oss eff.(ER)
Effective Output Capacitance (Energy Related) ––– 4780 –––
V
GS
= 0V, V
DS
= 0V to 19V
C
oss eff.(TR)
Effective Output Capacitance (Time Related)
––– 4970 –––
V
GS
= 0V, V
DS
= 0V to 19V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
––– ––– 429
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 1640
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
–––
–––
1.3
V T
J
= 25°C,I
S
= 160A,V
GS
= 0V
t
rr
Reverse Recovery Time
––– 71 107
ns
T
J
= 25°C V
DD
= 20V
––– 74 110
T
J
= 125°C I
F
= 160A,
Q
rr
Reverse Recovery Charge
––– 83 120
nC
T
J
= 25°C di/dt = 100A/µs
––– 92 140
T
J
= 125°C
I
RRM
Reverse Recovery Current
–––
2.0
–––
A T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF1324S-7P
3
2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance vs. Temperature
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
, D
ra
in
-t
o-
S
o
ur
ce
C
ur
re
nt
(
A
)
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
4.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
2
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VDS = 15V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120140160180
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(o
n)
,
D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
N
or
m
al
iz
ed
)
ID = 160A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
10000
100000
C
, C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
50
100
150
200
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
, G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(
V
)
VDS= 19V
VDS= 12V
ID= 75A
AUIRF1324S-7P
4
2015-9-30
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 12. Maximum Avalanche Energy vs. Drain Current
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
I S
D
, R
ev
er
se
D
ra
in
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
0
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(
A
)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
50
100
150
200
250
300
350
400
450
I D
,
D
ra
in
C
ur
re
nt
(
A
)
Limited By Package
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
-60 -40 -20 0 20 40 60 80 100 120140160 180
TJ , Temperature ( °C )
24
25
26
27
28
29
30
31
32
V
(B
R
)D
S
S
, D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(
V
)
Id = 5mA
-5
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
ne
rg
y
(µ
J)
Fig 9. Maximum Drain Current vs. Case Temperature
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
1000
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 45A
80A
BOTTOM 160A
AUIRF1324S-7P
5
2015-9-30
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Avalanche Current vs. Pulse width
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
°
C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
I (sec)
0.02070
0.000010
0.08624
0.000070
0.24491
0.001406
0.15005
0.009080
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
iRi
Ci=
iRi
C
C
4
4
R
4
R
4
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
AUIRF1324S-7P
6
2015-9-30
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at
www.infineon.com
)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during
avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
E
A
R
,
A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 160A
Fig 16. Threshold Voltage vs. Temperature
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(t
h)
, G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(
V
)
ID = 250µA
ID = 1.0mA
ID = 1.0A
AUIRF1324S-7P
7
2015-9-30
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Fig 19a. Switching Time Test Circuit
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
R G
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 19b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
AUIRF1324S-7P
8
2015-9-30
D
2
Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))
D
2
Pak - 7 Pin Part Marking Information
YWWA
XX
XX
Date Code
Y= Year
WW= Work Week
AUF1324S-7P
Lot Code
Part Number
IR Logo
AUIRF1324S-7P
9
2015-9-30
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (
www.infineon.com
).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D
2
-Pak 7 Pin
MSL1
ESD
Machine Model
Class M4
†
AEC-Q101-002
Human Body Model
Class H3A
†
AEC-Q101-001
Charged Device Model
Class C3
†
AEC-Q101-005
RoHS Compliant
Yes
Moisture Sensitivity Level
Revision History
Date Comments
9/30/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated typo on GFS on page 2.