2000-2011 Microchip Technology Inc.
DS21294E-page 1
MCP3002
Features
• 10-bit resolution
• ±1 LSB maximum DNL
• ±1 LSB maximum INL
• Analog inputs programmable as single-ended or
pseudo-differential pairs
• On-chip sample and hold
• SPI serial interface (modes 0,0 and 1,1)
• Single supply operation: 2.7V - 5.5V
• 200 ksps max sampling rate at V
DD
= 5V
• 75 ksps max sampling rate at V
DD
= 2.7V
• Low power CMOS technology:
- 5 nA typical standby current, 2 µA maximum
- 550 µA maximum active current at 5V
• Industrial temperature range: -40°C to +85°C
• 8-pin MSOP, PDIP, SOIC and TSSOP packages
Applications
• Sensor Interface
• Process Control
• Data Acquisition
• Battery Operated Systems
Functional Block Diagram
Description
The MCP3002 is a successive approximation 10-bit
analog-to-digital (A/D) converter with on-board sample
and hold circuitry.
The MCP3002 is programmable to provide a single
pseudo-differential input pair or dual single-ended
inputs. Differential Nonlinearity (DNL) and Integral
Nonlinearity (INL) are both specified at ±1 LSB. Com-
munication with the device is done using a simple serial
interface compatible with the SPI protocol. The device
is capable of conversion rates of up to 200 ksps at 5V
and 75 ksps at 2.7V.
The MCP3002 operates over a broad voltage range,
2.7V to 5.5V. Low-current design permits operation with
a typical standby current of 5 nA and a typical active
current of 375 µA.
The MCP3002 is offered in 8-pin MSOP, PDIP, TSSOP
and 150 mil SOIC packages.
Package Types
Comparator
Sample
and
Hold
10-Bit SAR
DAC
Control Logic
CS/SHDN
V
SS
V
DD
CLK
D
OUT
Shift
Register
CH0
Channel
Mux
Input
CH1
D
IN
MCP
3
00
2
1
2
3
4
8
7
6
5
CH0
CH1
V
SS
CS/SHDN
V
DD
/V
REF
CLK
D
OUT
D
IN
MSOP, PDIP, SOIC, TSSOP
2.7V Dual Channel 10-Bit A/D Converter
with SPI Serial Interface
MCP3002
DS21294E-page 2
2000-2011 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
..................................................................................7.0V
All Inputs and Outputs w.r.t. V
SS
............. -0.6V to V
DD
+ 0.6V
Storage Temperature.....................................-65°C to +150°C
Ambient temperature with power applied.......-65°C to +150°C
ESD Protection On All Pins (HBM)
4 kV
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
All parameters apply at V
DD
= 5V, T
A
= -40°C to +85°C, f
SAMPLE
= 200 ksps and f
CLK
= 16*f
SAMPLE
, unless otherwise
noted.
Typical values apply for V
DD
= 5V, T
A
= +25°C, unless otherwise noted.
PARAMETER
SYM
MIN
TYP
MAX
UNITS
CONDITIONS
Conversion Rate:
Conversion Time
T
CONV
—
—
10
clock
cycles
Analog Input Sample Time
T
SAMPLE
1.5
clock
cycles
Throughput Rate
F
SAMPLE
—
—
200
75
ksps
ksps
V
DD
= 5V
V
DD
= 2.7V
DC Accuracy:
Resolution
10
bits
Integral Nonlinearity
INL
—
±0.5
±1
LSB
Differential Nonlinearity
DNL
—
±0.25
±1
LSB
No missing codes over
temperature
Offset Error
—
—
±1.5
LSB
Gain Error
—
—
±1
LSB
Dynamic Performance:
Total Harmonic Distortion
THD
—
-76
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Signal to Noise and Distortion
(SINAD)
SINAD
—
61
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Spurious Free Dynamic Range
SFDR
—
78
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Analog Inputs:
Input Voltage Range for CH0 or
CH1 in Single-ended Mode
V
SS
—
V
DD
V
Input Voltage Range for IN+ in
Pseudo-Differential Mode
IN+
IN-
—
V
DD
+IN-
Input Voltage Range for IN- in
Pseudo-Differential Mode
IN-
V
SS
-100
—
V
SS
+100
mV
Leakage Current
—
0.001
±1
µA
Switch Resistance
R
SS
—
1K
—
See
Figure 4-1
Sample Capacitor
C
SAMPLE
—
20
—
pF
See
Figure 4-1
Note 1: This parameter is established by characterization and not 100% tested.
2: The sample cap will eventually lose charge, especially at elevated temperatures, therefore f
CLK
10 kHz for
temperatures at or above 70°C.
2000-2011 Microchip Technology Inc.
DS21294E-page 3
MCP3002
Digital Input/Output:
Data Coding Format
Straight Binary
High Level Input Voltage
V
IH
0.7 V
DD
—
—
V
Low Level Input Voltage
V
IL
—
—
0.3 V
DD
V
High Level Output Voltage
V
OH
4.1
—
—
V
I
OH
= -1 mA, V
DD
= 4.5V
Low Level Output Voltage
V
OL
—
—
0.4
V
I
OL
= 1 mA, V
DD
= 4.5V
Input Leakage Current
I
LI
-10
—
10
µA
V
IN
= V
SS
or V
DD
Output Leakage Current
I
LO
-10
—
10
µA
V
OUT
= V
SS
or V
DD
Pin Capacitance
(All Inputs/Outputs)
C
IN
, C
OUT
—
—
10
pF
V
DD
= 5.0V (
Note 1
)
T
A
= 25°C, f = 1 MHz
Timing Parameters:
Clock Frequency
f
CLK
—
—
—
—
3.2
1.2
MHz
MHz
V
DD
= 5V (
Note 2
)
V
DD
= 2.7V (
Note 2
)
Clock High Time
t
HI
140
—
—
ns
Clock Low Time
t
LO
140
—
—
ns
CS Fall To First Rising CLK
Edge
t
SUCS
100
—
—
ns
Data Input Setup Time
t
SU
50
—
—
ns
Data Input Hold Time
t
HD
50
—
—
ns
CLK Fall To Output Data Valid
t
DO
—
—
—
—
125
200
ns
ns
V
DD
= 5V, see
Figure 1-2
V
DD
= 2.7V, see
Figure 1-2
CLK Fall To Output Enable
t
EN
—
—
125
200
ns
ns
V
DD
= 5V, see
Figure 1-2
V
DD
= 2.7V, see
Figure 1-2
CS Rise To Output Disable
tDIS
—
—
100
ns
See Test Circuits,
Figure 1-2
Note 1
CS Disable Time
t
CSH
310
—
—
ns
D
OUT
Rise Time
t
R
—
—
100
ns
See Test Circuits,
Figure 1-2
Note 1
D
OUT
Fall Time
t
F
—
—
100
ns
See Test Circuits,
Figure 1-2
Note 1
Power Requirements:
Operating Voltage
V
DD
2.7
—
5.5
V
Operating Current
I
DD
—
—
525
300
650
—
µA
V
DD
= 5.0V, D
OUT
unloaded
V
DD
= 2.7V, D
OUT
unloaded
Standby Current
I
DDS
—
0.005
2
µA
CS = V
DD
= 5.0V
ELECTRICAL CHARACTERISTICS (CONTINUED)
All parameters apply at V
DD
= 5V, T
A
= -40°C to +85°C, f
SAMPLE
= 200 ksps and f
CLK
= 16*f
SAMPLE
, unless otherwise
noted.
Typical values apply for V
DD
= 5V, T
A
= +25°C, unless otherwise noted.
PARAMETER
SYM
MIN
TYP
MAX
UNITS
CONDITIONS
Note 1: This parameter is established by characterization and not 100% tested.
2: The sample cap will eventually lose charge, especially at elevated temperatures, therefore f
CLK
10 kHz for
temperatures at or above 70°C.
MCP3002
DS21294E-page 4
2000-2011 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
FIGURE 1-1:
Serial Timing.
Electrical Specifications: Unless otherwise indicated, V
DD
= +2.7V to +5.5V, V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+85
°C
Operating Temperature Range
T
A
-40
—
+85
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 8L-MSOP
JA
—
211
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
89.5
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
149.5
—
°C/W
Thermal Resistance, 8L-TSSOP
JA
—
139
—
°C/W
CS
CLK
D
IN
MSB IN
t
SU
t
HD
t
SUCS
t
CSH
t
HI
t
LO
D
OUT
t
EN
t
DO
t
R
t
F
LSB
MSB OUT
t
DIS
NULL BIT
2000-2011 Microchip Technology Inc.
DS21294E-page 5
MCP3002
FIGURE 1-2:
Test Circuits.
V
IH
t
DIS
CS
D
OUT
Waveform 1*
D
OUT
Waveform 2†
90%
10%
* Waveform 1 is for an output with internal
conditions such that the output is high, unless dis-
abled by the output control.
† Waveform 2 is for an output with internal
conditions such that the output is low, unless dis-
abled by the output control.
Voltage Waveforms for t
DIS
Test Point
1.4V
D
OUT
Load Circuit for t
R
, t
F
, t
DO
3 kΩ
C
L
= 30 pF
Test Point
D
OUT
Load Circuit for t
DIS
and t
EN
3 kΩ
30 pF
t
DIS
Waveform 2
t
DIS
Waveform 1
CS
CLK
D
OUT
t
EN
1
2
B9
Voltage Waveforms for t
EN
t
EN
Waveform
V
DD
V
DD
/2
V
SS
3
4
D
OUT
t
R
Voltage Waveforms for t
R
, t
F
CLK
D
OUT
t
DO
Voltage Waveforms for t
DO
t
F
V
OH
V
OL
MCP3002
DS21294E-page 6
2000-2011 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CHARACTERISTICS
Note: Unless otherwise indicated, V
DD
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 16* f
SAMPLE
, T
A
= +25°C.
FIGURE 2-1:
Integral Nonlinearity (INL)
vs. Sample Rate.
FIGURE 2-2:
Integral Nonlinearity (INL)
vs. Code.
FIGURE 2-3:
Integral Nonlinearity (INL)
vs. Temperature.
FIGURE 2-4:
Integral Nonlinearity (INL)
vs. Sample Rate (V
DD
= 2.7V).
FIGURE 2-5:
Integral Nonlinearity (INL)
vs. Code (V
DD
= 2.7V).
FIGURE 2-6:
Integral Nonlinearity (INL)
vs. Temperature (V
DD
= 2.7V).
Note:
The graphs provided following this note are a statistical summary based on a limited number of samples
and are provided for informational purposes only. The performance characteristics listed herein are not
tested or guaranteed. In some graphs, the data presented may be outside the specified operating range
(e.g., outside specified power supply range) and therefore outside the warranted range.
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0
25
50
75 100 125 150 175 200 225 250
Sample Rate (ksps)
IN
L
(
L
S
B
)
Positive INL
Negative INL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
128
256
384
512
640
768
896 1024
Digital Code
INL
(
L
S
B
)
V
DD
= 5V
f
SAMPLE
= 200 ksps
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
Temperature (°C)
INL
(
L
S
B
)
Positive INL
Negative INL
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0
25
50
75
100
Sample Rate (ksps)
IN
L
(
L
S
B
)
Positive INL
Negative INL
V
DD
= 2.7V
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
128
256
384
512
640
768
896 1024
Digital Code
IN
L
(
L
S
B
)
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
Temperature (°C)
INL
(
L
S
B
)
Positive INL
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
Negative INL
2000-2011 Microchip Technology Inc.
DS21294E-page 7
MCP3002
Note: Unless otherwise indicated, V
DD
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 16* f
SAMPLE
, T
A
= +25°C.
FIGURE 2-7:
Integral Nonlinearity (INL)
vs. V
DD.
FIGURE 2-8:
Differential Nonlinearity
(DNL) vs. Sample Rate.
FIGURE 2-9:
Differential Nonlinearity
(DNL) vs. Code (Representative Part).
FIGURE 2-10:
Differential Nonlinearity
(DNL) vs. V
DD.
FIGURE 2-11:
Differential Nonlinearity
(DNL) vs. Sample Rate (V
DD
= 2.7V).
FIGURE 2-12:
Differential Nonlinearity
(DNL) vs. Code (Representative Part,
V
DD
= 2.7V).
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
DD
(V)
IN
L
(L
S
B
)
Positive INL
Negative INL
All points taken at f
SAMPLE
= 200 ksps except
V
DD
= 2.7V, f
SAMPLE
= 75 ksps
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0
25
50
75
100 125 150 175 200 225 250
Sample Rate (ksps)
DN
L (L
S
B
)
Positive DNL
Negative DNL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
128
256
384
512
640
768
896 1024
Digital Code
DNL
(
L
S
B
)
V
DD
= 5V
f
SAMPLE
= 200 ksps
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VDD (V)
DNL
(
L
S
B
)
Positive DNL
Negative DNL
All points taken at f
SAMPLE
= 200 ksps except
V
DD
= 2.7V, f
SAMPLE
= 75 ksps
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0
25
50
75
100
Sample Rate (ksps)
DNL
(L
S
B
)
Positive DNL
Negative DNL
V
DD
= 2.7V
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
128
256
384
512
640
768
896 1024
Digital Code
DN
L
(
L
S
B
)
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
MCP3002
DS21294E-page 8
2000-2011 Microchip Technology Inc.
Note: Unless otherwise indicated, V
DD
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 16* f
SAMPLE
, T
A
= +25°C.
FIGURE 2-13:
Differential Nonlinearity
(DNL) vs. Temperature.
FIGURE 2-14:
Gain Error vs. V
DD
.
FIGURE 2-15:
Gain Error vs. Temperature.
FIGURE 2-16:
Differential Nonlinearity
(DNL) vs. Temperature (V
DD
= 2.7V).
FIGURE 2-17:
Offset Error vs. V
DD
.
FIGURE 2-18:
Offset Error vs.
Temperature.
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
Temperature (°C)
DN
L
(
L
S
B
)
Positive DNL
Negative DNL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
DD
(V)
G
a
in
Er
ro
r (
L
SB
)
All points taken at f
SAMPLE
= 200 ksps except
V
DD
= 2.7V, f
SAMPLE
= 75 ksps
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
-50
-25
0
25
50
75
100
Temperature (°C)
G
a
in
Err
o
r (
L
SB
)
V
DD
= 5V
f
SAMPLE
= 200 ksps
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
Temperature (°C)
DNL
(
L
S
B
)
Positive DNL
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
Negative DNL
0.0
0.2
0.4
0.6
0.8
1.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
DD
(V)
O
ff
s
e
t E
rro
r
(L
SB
)
All points taken at f
SAMPLE
= 200 ksps except
V
DD
= 2.7V, f
SAMPLE
= 75 ksps
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-50
-25
0
25
50
75
100
Temperature (°C)
O
ff
s
e
t Er
ro
r (
L
SB
)
V
DD
= 5V
f
SAMPLE
= 200 ksps
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
2000-2011 Microchip Technology Inc.
DS21294E-page 9
MCP3002
Note: Unless otherwise indicated, V
DD
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 16* f
SAMPLE
, T
A
= +25°C.
FIGURE 2-19:
Signal-to-Noise Ratio
(SNR) vs. Input Frequency.
FIGURE 2-20:
Total Harmonic Distortion
(THD) vs. Input Frequency.
FIGURE 2-21:
Effective Number of Bits
(ENOB) vs. V
DD
.
FIGURE 2-22:
Signal-to-Noise and
Distortion (SINAD) vs. Input Frequency.
FIGURE 2-23:
Signal-to-Noise and
Distortion (SINAD) vs. Signal Level.
FIGURE 2-24:
Effective Number of Bits
(ENOB) vs. Input Frequency.
0
10
20
30
40
50
60
70
80
1
10
100
Input Frequency (kHz)
S
NR (
d
B
)
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= 5V
f
SAMPLE
= 200 ksps
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
1
10
100
Input Frequency (kHz)
T
HD (
d
B)
V
DD
= 5V
f
SAMPLE
= 200 ksps
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
9.4
9.5
9.6
9.7
9.8
9.9
10.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
DD
(V)
EN
O
B
All points at f
SAMPLE
= 200 ksps
except V
DD
= 2.7V, f
SAMPLE
= 75 ksps
0
10
20
30
40
50
60
70
80
1
10
100
Input Frequency (kHz)
S
INAD
(
d
B)
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= 5V
f
SAMPLE
= 200 ksps
0
10
20
30
40
50
60
70
80
-40
-35
-30
-25
-20
-15
-10
-5
0
Input Signal Level (dB)
S
INAD
(
d
B)
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= 5V
f
SAMPLE
= 200 ksps
8.0
8.5
9.0
9.5
10.0
1
10
100
Input Frequency (kHz)
EN
O
B
(rm
s
)
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= 5V
f
SAMPLE
= 200 ksps
MCP3002
DS21294E-page 10
2000-2011 Microchip Technology Inc.
Note: Unless otherwise indicated, V
DD
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 16* f
SAMPLE
, T
A
= +25°C.
FIGURE 2-25:
Spurious Free Dynamic
Range (SFDR) vs. Input Frequency.
FIGURE 2-26:
Frequency Spectrum of
10 kHz input (Representative Part).
FIGURE 2-27:
Frequency Spectrum of
1 kHz input (Representative Part, V
DD
= 2.7V).
FIGURE 2-28:
I
DD
vs. V
DD
.
FIGURE 2-29:
I
DD
vs. Clock Frequency.
FIGURE 2-30:
I
DD
vs. Temperature.
0
10
20
30
40
50
60
70
80
90
100
1
10
100
Input Frequency (kHz)
S
F
DR (dB)
V
DD
= 5V
f
SAMPLE
= 200 ksps
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
20000
40000
60000
80000
100000
Frequency (Hz)
Am
pli
tu
d
e (
d
B)
V
DD
= 5V
f
SAMPLE
= 200 ksps
f
INPUT
= 10.976 kHz
4096 points
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
50
00
1
000
0
15
0
00
2
000
0
2
500
0
3
000
0
3
500
0
Frequency (Hz)
Am
p
lit
u
d
e (d
B)
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
f
INPUT
= 1.00708 kHz
4096 points
0
100
200
300
400
500
600
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
DD
(V)
I
DD
(µ
A
)
All points at f
CLK
= 3.2 MHz
except at V
DD
= 2.5V, f
CLK
= 1.2 MHz
0
50
100
150
200
250
300
350
400
450
500
550
600
10
100
1000
10000
Clock Frequency (kHz)
I
DD
(µ
A
)
V
DD
= 5V
V
DD
= 2.7V
0
100
200
300
400
500
600
-50
-25
0
25
50
75
100
Temperature (°C)
I
DD
(µ
A)
V
DD
= 5V
f
CLK
= 3.2 MHz
V
DD
= 2.7V
f
CLK
= 1.2 MHz