![background image](/sites/default/files/pdfhtml_microchip/21527c001.png)
© 2007 Microchip Technology Inc.
DS21527C-page 1
Features
• Extremely Low Supply Current for Longer Battery
Life
• Select Mode™ Operation: Selectable Output
Voltages for High Design Flexibility
• Very Low Dropout Voltage
• 10
μsec (Typ.) Wake-Up Time from SHDN
• Maximum 150mA Output Current per Output
• High Output Voltage Accuracy
• Power-Saving Shutdown Mode
• RESET Output Can Be Used as a Low Battery
Detector or Processor Reset Generator
• Over Current Protection and Over Temperature
Shutdown
• Space Saving 8-Pin MSOP Package
Applications
• Load Partitioning
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Pagers and Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
Device Selection Table
NOTE: “R” denotes the suffix for the 2.63V RESET threshold.
“B” indicates V
OUT1
= 1.8V (fixed).
“D” indicates V
OUT2
= 2.8V, 3.0V (selectable).
Other output voltages are available. Please contact Microchip
Technology Inc. for details.
Package Type
General Description
The TC1306 combines two CMOS Low Dropout Regu-
lators and a Microprocessor Monitor in a space saving
8-Pin MSOP package. Designed specifically for battery
operated systems, total supply current is typically
120
μA at full load, 20 to 60 times lower than in bipolar
regulators.
The TC1306 features selectable output voltages for
higher design flexibility. The dual-state SELECT input
pin allows the user to select V
OUT2
from 2 different
values (2.8V and 3.0V). V
OUT1
supplies a fixed 1.8V
voltage.
An active low RESET is asserted when the output
voltage V
OUT2
falls below the 2.63V reset voltage
threshold. The RESET output remains low for 300msec
(typical) after V
OUT2
rises above reset threshold. When
the shutdown control (SHDN1) is low, the regulator
output voltage V
OUT1
falls to zero and RESET output
remains valid. When the shutdown control (SHDN2) is
low, the regulator output voltage V
OUT2
falls to zero and
RESET output is low.
Other key features for the device include ultra low noise
operation, fast response to step changes in load and
very low dropout voltage (typically 125mV at full load).
The device also incorporates both over temperature
and over current protection. Each regulator is stable
with an output capacitor of only 1
μF and has a
maximum output current of 150mA.
Typical Application
Part Number
Package
Junction
Temperature
Range
TC1306R-BDVUA 8-Pin MSOP -40°C to +125°C
SHDN2
V
IN
V
OUT2
V
OUT1
1
GND
SELECT
2
3
4
8
7
6
5
SHDN1
RESET
TC1306
8-Pin MSOP
V
OUT2
V
OUT1
RESET
TC1306
3.3
µF
3.3
µF
1
2
3
4
8
7
6
5
V
IN
GND
SELECT
SHDN1
SHDN2
TC1306
Dual 150mA CMOS LDO With Select Mode™ Operation,
Shutdown and RESET Output
Obsolete Device
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TC1306
DS21527C-page 2
© 2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ......... V
IN
+0.3V to -0.3V
Operating Temperature Range.... -40°C < T
J
< +125°C
Storage Temperature Range ..............-65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1306 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V
IN
= V
R
+ 1V, I
L
= 100
μA, C
L
= 3.3
μF, SHDN1 > V
IH
, SHDN2 > V
IH
, T
A
= 25°C, unless otherwise noted.
Boldface type specifications apply for junction temperature of -40°C to +125°C. Applies to both V
OUT1
and V
OUT2
.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
Input Operating Voltage
2.7
—
6.0
V
Note 1
I
OUT
MAX
Maximum Output Current
150
—
—
mA
Per Channel
V
OUT
Output Voltage (V
OUT1
and V
OUT2
)
V
R
– 2.5%
V
R
± 0.5% V
R
+ 2.5%
V
Note 2
TCV
OUT
V
OUT
Temperature Coefficient
—
—
20
40
—
—
ppm/°C Note 3
ΔV
OUT
/
ΔV
IN
Line Regulation
—
0.05
0.35
%
(V
R
+ 1V) < V
IN
< 6V
ΔV
OUT
/V
OUT
Load Regulation
—
0.3
2
%
I
L
= 0.1mA to I
OUT
MAX
(Note 4)
V
IN –
V
OUT
Dropout Voltage
—
2
45
85
125
—
120
240
360
mV
I
L
= 100
μA
I
L
= 50mA
I
L
= 100mA
I
L
= 150mA, (Note 5)
I
IN
Supply Current
—
120
200
μA
SHDN1, SHDN2 = V
IH
, I
L
= 0
I
INSD
Shutdown Supply Current
—
0.05
0.5
μA
SHDN1, SHDN2 = 0V
PSRR
Power Supply Rejection Ratio
—
55
—
dB
F
RE
≤ 120Hz
I
OUTSC
Output Short Circuit Current
—
450
—
mA
V
OUT
= 0V
ΔV
OUT
ΔP
D
Thermal Regulation
—
0.04
—
V/W
Notes 6, 7
t
WK
Wake Up Time
(from Shutdown Mode)
—
10
—
μsec
V
IN
= 5V
C
IN
= 1
μF, C
OUT
= 4.7
μF
I
L
= 30mA, (See Figure 4-1)
ts
Settling Time
(from Shutdown Mode)
—
40
—
μsec
V
IN
= 5V
C
IN
= 1
μF, C
OUT
= 4.7
μF
I
L
= 30mA, (See Figure 4-1)
Note 1:
The minimum V
IN
has to meet two conditions: V
IN
≥ 2.7 and V
IN
= V
R
+ V
DROPOUT
.
2:
V
R
is the regulator output voltage setting. For example: V
R
= 2.8V, 3.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 msec.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 Thermal Considerations section of this data sheet for more details.
T
C
V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
6
V
OUT
x
ΔT
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© 2007 Microchip Technology Inc.
DS21527C-page 3
TC1306
TC1306 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: V
IN
= V
R
+ 1V, I
L
= 100
μA, C
L
= 3.3
μF, SHDN1 > V
IH
, SHDN2 > V
IH
, T
A
= 25°C, unless otherwise
noted. Boldface type specifications apply for junction temperature of -40°C to +125°C. Applies to both V
OUT1
and V
OUT2
.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
T
SD
Thermal Shutdown Die
Temperature
—
160
—
°C
ΔT
SD
Thermal Shutdown Hysteresis
—
15
—
°C
eN
Output Noise
—
200
—
nV
√Hz F = 10kHz
SHDN Input
V
IH
SHDN Input High Threshold
65
—
—
%V
IN
V
IN
= 2.7V to 6.0V
V
IL
SHDN Input Low Threshold
—
—
15
%V
IN
V
IN
= 2.7V to 6.0V
SELECT Input
V
SELH
SELECT Input HIgh Threshold
65
—
—
%V
IN
V
IN
= 2.7V to 6.0V
V
SELL
SELECT Input Low Threshold
—
—
15
%V
IN
V
IN
= 2.7V to 6.0V
RESET Output
V
IN
MIN
Minimum V
IN
Operating Voltage
1.0
1.2
—
—
6.0
6.0
V
T
A
= 0°C to +70°C
T
A
= -40°C to +125°C
V
TH
Reset Threshold
2.59
2.55
2.63
—
2.66
2.70
V
T
A
= +25°C
T
A
= -40°C to +125°C
Reset Threshold Tempco
—
30
—
ppm/°C
V
OUT2
to Reset Delay
—
100
—
μsec
V
OUT2
= V
TH
to (V
TH
– 100mV)
Reset Active Time-out Period
140
300
560
msec
V
OL
RESET Output Voltage Low
—
—
—
—
—
—
0.3
0.4
0.3
V
V
OUT2
= V
TH
MIN
, I
SINK
= 1.2mA
V
OUT2
= V
TH
MIN
, I
SINK
= 3.2mA
V
OUT2
> 1.0V, I
SINK
= 50
μA
V
OH
RESET Output Voltage High
0.8 V
OUT2
V
OUT2
– 1.5
—
—
—
—
V
V
OUT2
> V
TH
MAX
,
I
SOURCE
= 500
μA
V
OUT2
> V
TH
MAX
,
I
SOURCE
= 800
μA
Note 1:
The minimum V
IN
has to meet two conditions: V
IN
≥ 2.7 and V
IN
= V
R
+ V
DROPOUT
.
2:
V
R
is the regulator output voltage setting. For example: V
R
= 2.8V, 3.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 msec.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 Thermal Considerations section of this data sheet for more details.
T
C
V
OUT
= (V
OUT
MAX
– V
OUT
MIN
) x 10
6
V
OUT
x
ΔT
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TC1306
DS21527C-page 4
© 2007 Microchip Technology Inc.
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
3.0
DETAILED DESCRIPTION
The TC1306 is a precision fixed output voltage
regulator that contains two fully independent 150mA
outputs. The device also features separate shutdown
modes for low-power operation. The Select Mode™
operation allows the user to select V
OUT2
from two
different values (2.8V, 3.0V), therefore providing high
design flexibility. V
OUT1
supplies a fixed 1.8V output
voltage. The CMOS construction of the TC1306 results
in a very low supply current, which does not increase
with load changes. In addition, V
OUT
remains stable
and within regulation at no load currents.
The TC1306 also features an integrated microproces-
sor supervisor that monitors the V
OUT2
output. The
active low RESET signal is asserted when the voltage
of V
OUT2
falls below the reset voltage threshold
(2.63V). The RESET output remains low for 300msec
(typical) after V
OUT2
rises above the reset threshold.
The RESET output of the TC1306 is optimized to reject
fast transient glitches on the monitored output line.
Pin No.
(8-Pin MSOP)
Symbol
Description
1
V
IN
Power supply input.
2
GND
Ground terminal.
3
SELECT
SELECT control for setting V
OUT2
. SELECT = Low for V
OUT2
= 2.8V, SELECT = High for
V
OUT2
= 3.0V.
4
SHDN1
Shutdown control input for V
OUT1
. Regulator 1 is fully enabled when a logic high is applied to
this input. Regulator 1 enters shutdown when a logic low is applied to this input. During
shutdown, regulator output voltage falls to zero, RESET output remains valid.
5
SHDN2
Shutdown control input for V
OUT2
. Regulator 2 is fully enabled when a logic high is applied to
this input. Regulator 2 enters shutdown when a logic low is applied to this input. During
shutdown, regulator output voltage falls to zero, RESET output is low.
6
V
OUT1
Regulated voltage output 1.
7
V
OUT2
Regulated voltage output 2.
8
RESET
RESET Output. RESET = Low when V
OUT2
is below the Reset Threshold Voltage.
RESET = High when V
OUT2
is above the Reset Threshold Voltage.
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© 2007 Microchip Technology Inc.
DS21527C-page 5
TC1306
4.0
TYPICAL APPLICATIONS
4.1
Input and Output Capacitor
The TC1306 is stable with a wide range of capacitor
values and types. A capacitor with a minimum value of
1
μF from V
OUT
to Ground is required. The output
capacitor should have an effective series resistance
(ESR) of 0.1
Ω to 10Ω for a 1μF capacitor and 0.01Ω to
10
Ω for a 10μF capacitor. A 1μF capacitor should be
connected from the V
IN
to GND if there is more than 10
inches of wire between the regulator and the AC filter
capacitor, or if a battery is used as the power source.
Aluminum electrolytic or tantalum capacitor types can
be used. (Since many aluminum electrolytic capacitors
freeze at approximately -30°C, solid tantalums are
recommended for applications operating below -20°C).
When operating from sources other than batteries,
supply-noise rejection and transient response can be
improved by increasing the value of the input and
output capacitors and employing passive filtering
techniques.
4.2
Shutdown Mode
Applying a logic high to each of the shutdown pins turns
on the corresponding output. Each regulator enters
shutdown mode when a logic low is applied to the
corresponding input. During shutdown mode, output
voltage falls to zero, and regulator supply current is
reduced to 0.5
μA (max). If shutdown mode is not
necessary, the pins should be connected to V
IN
.
4.3
Select Mode™ Operation
The Select Mode™ operation is a dual-state input that
allows the user to select V
OUT2
from two different
values. By applying a logic low to the SELECT pin,
V
OUT2
is set to supply a 2.8V output voltage. A logic
high signal at the SELECT pin sets V
OUT2
to 3.0V. This
output voltage functionality provides high design
flexibility and minimizes cost associated with inventory,
time-to-market and new device qualifications.
4.4
Turn On Response
The turn on response is defined as two separate
response categories, Wake Up Time (t
WK
) and Settling
Time (t
S
).
The TC1306 has a fast Wake Up Time (10
μsec typical)
when released from shutdown. See Figure 4-1 for the
Wake Up Time designated as t
WK
. The Wake Up Time
is defined as the time it takes for the output to rise to 2%
of the V
OUT
value after being released from shutdown.
The total turn on response is defined as the Settling
Time (t
S
), see Figure 4-1. Settling Time (inclusive with
t
WK)
is defined as the condition when the output is
within 2% of its fully enabled value (40
μsec typical)
when released from shutdown. The settling time of the
output voltage is dependent on load conditions, output
voltage and V
OUT
(RC response).
FIGURE 4-1:
WAKE-UP RESPONSE
TIME
t
S
t
WK
98%
2%
SHDN
V
IL
V
OUT
V
IH
![background image](/sites/default/files/pdfhtml_microchip/21527c006.png)
TC1306
DS21527C-page 6
© 2007 Microchip Technology Inc.
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die exceeds approximately 160°C.
The regulator remains off until the die temperature
drops to approximately 145°C.
Thermal shutdown is intended to protect the device
under transient accidental (fault) overload conditions.
Thermal Shutdown may not protect the LDO while
operating above junction temperatures of 125°C
continuously. Sufficient thermal evaluation of the
design needs to be conducted to ensure that the
junction temperature does not exceed 125°C.
5.2
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation.
EQUATION 5-1:
The maximum allowable power dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (T
A
MAX
), the maximum allowable die
temperature (125°C), and the thermal resistance from
junction-to-air (
θ
JA
). The MSOP-8 package has a
θ
JA
of
approximately 200°C/W when mounted on a four layer
FR4 dielectric copper clad PC board.
EQUATION 5-2:
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits. For example:
Given:
V
IN
MAX
= 3.8V ± 5%
V
OUT1
MIN
= 1.8V ± 2.5%
V
OUT2
MIN
= 3.0V ± 2.5%
I
LOAD1
MAX
= 60mA
I
LOAD2
MAX
= 120mA
T
J
MAX
= 125°C
T
A
MAX
= 55°C
θ
JA
= 200°C/W
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
P
D
≈ [(V
IN
MAX
– V
OUT1
MIN
)] x I
LOAD1
MAX
+ [(V
IN
MAX
– V
OUT2
MIN
)] x I
LOAD2
MAX
[(3.8 x 1.05) – (1.8 x .975)] x 60 x 10
-3
+ [(3.8 x 1.05) – (3.0 x .975)] x 120 x 10
-3
= 256mW
Maximum allowable power dissipation:
In this example, the TC1306 dissipates a maximum of
262mW; below the allowable limit of 350mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits. For example, the maximum allowable
V
IN
is found by substituting the maximum allowable
power dissipation of 350mW into Equation 5-1, from
which V
IN
MAX
= 4.5V.
5.3
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower
θ
JA
and therefore
increase the maximum allowable power dissipation
limit.
Where:
P
D
≈ (V
IN
MAX
– V
OUT1
MIN
)I
LOAD1
MAX
+
P
D
V
IN
MAX
V
OUT1
MIN
I
LOAD1
MAX
= Worst case actual power dissipation
= Minimum regulator output voltage1
= Maximum output (load) current1
= Maximum voltage on V
IN
(V
IN
MAX
– V
OUT2
MIN
)I
LOAD2
MAX
V
OUT2
MIN
I
LOAD2
MAX
= Minimum regulator output voltage2
= Maximum output (load) current2
P
D
MAX
= (T
J
MAX
– T
A
MAX
)
θ
JA
Where all terms are previously defined.
P
D
= (T
J
MAX
– T
A
MAX
)
θ
JA
= (125 – 55)
200
= 350mW
![background image](/sites/default/files/pdfhtml_microchip/21527c007.png)
© 2007 Microchip Technology Inc.
DS21527C-page 7
TC1306
6.0
TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
V
DD
= 6.0V, I
L
= 100
µA
V
DD
= 6.0V, I
L
= 100
µA
1.81
1.80
1.79
1.78
1.77
1.76
1.75
1.74
2.505
2.500
2.495
2.490
2.485
2.480
2.475
2.470
2.465
2.460
3.000
2.995
2.990
2.985
2.980
2.975
2.970
2.965
2.960
2.955
2.950
V
OUT1
at Various V
DD
and
Load vs. Temperature
V
OUT
(V)
V
OUT2
(V)
V
DD
= 6.0V, I
L
= 100
µA Load
V
DD
= 2.8V,
I
L
= 150mA Load
V
DD
= 6.0V, I
L
= 100mA Load
TEMPERATURE (
°C)
-40
-20
5
125
105
80
55
30
TEMPERATURE (
°C)
-40
-20
5
125
105
80
55
30
TEMPERATURE (
°C)
-40
-20
5
125
105
80
55
30
V
OUT2
(V)
V
OUT2
at Various V
DD
/
Load Current vs. Temperature
(Select = GND)
V
OUT2
at Various V
DD
/
Load Current vs. Temperature
(Select = V
DD
)
V
DD
= 3.8V, I
L
= 150mA
V
DD
= 3.8V, I
L
= 100mA
V
DD
= 3.8V, I
L
= 50mA
V
DD
= 3.8V, I
L
= 100
µA
V
DD
= 4.0V, I
L
= 100
µA
V
DD
= 3.8V, I
L
= 50mA
V
DD
= 3.8V, I
L
= 100mA
V
DD
= 4.0V, I
L
= 150mA
LOAD REG (%)
LOAD REG (%)
3 3.5 4 4.5 5 5.5 6
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
160
140
120
100
80
60
40
20
0
Load Regulation 1 vs.
Temperature
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
I
DD
vs. V
DD
(Select = GND)
Load Regulation 2 vs.
Temperature (Select = GND)
I
DD
(
µ
A)
TEMPERATURE (
°C)
-40
-20
5
125
105
80
55
30
TEMPERATURE (
°C)
-40
-20
5
125
105
80
55
30
V
DD
(V)
125
°C
-40
°C
25
°C
% Load Reg #1, I
L
= 0.1 to 150mA
I
L
= 0.1 to 150mA
LOAD REGULATION (%)
LOAD CURRENT (mA)
DROPOUT VOLTAGE (V)
0 25 50 75 100 125 150
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
DROPOUT VOLTAGE (V)
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Load Regulation 2 vs.
Temperature (Select = V
DD
)
Dropout Voltage vs.
Load Current (Select = GND)
Dropout Voltage vs.
Load Current (Select = V
DD
)
TEMPERATURE (
°C)
-40
-20
5
125
105
80
55
30
I
L
= 0.1 to 150mA
-40
°C
25
°C
125
°C
-40
°C
25
°C
LOAD CURRENT (mA)
0 25 50 75 100 125 150
125
°C
![background image](/sites/default/files/pdfhtml_microchip/21527c008.png)
TC1306
DS21527C-page 8
© 2007 Microchip Technology Inc.
6.0
TYPICAL CHARACTERISTICS (CONTINUED)
f (Hz)
10
100
1k
10k
100 1M
-100
-80
-60
-40
-20
0
IOUT = 150mA
COUT = 10µF Ceramic
VINDC = 4V
VINAC = 100mVP-P
VOUTDC = 3V
PSRR (dB)
Power Supply Rejection Ratio vs. Frequency
f (Hz)
10
100
1k
10k
100 1M
-100
-80
-60
-40
-20
0
IOUT = 150mA
COUT = 10µF Tantalum
VINDC = 4V
VINAC = 100mVP-P
VOUTDC = 3V
PSRR (dB)
Power Supply Rejection Ratio vs. Frequency
f (Hz)
10
100
1k
10k
100 1M
-100
-80
-60
-40
-20
0
IOUT = 100µA
COUT = 10µF Tantalum
VINDC = 4V
VINAC = 100mVP-P
VOUTDC = 3V
PSRR (dB)
Power Supply Rejection Ratio vs. Frequency
10
0.1
0.001
0.01
f (Hz)
0.01
0.1
1
10
1000
100
Noise (μV/√HZ)
V
OUT2
C
OUT1
= C
OUT2
= 4.7
m
F,
I
LOAD
= 100mA, V
IN
= 4.0V
V
OUT1
= V
OUT2
= 3.0V
V
OUT1
Output Noise
1
![background image](/sites/default/files/pdfhtml_microchip/21527c009.png)
© 2007 Microchip Technology Inc.
DS21527C-page 9
TC1306
6.0
TYPICAL CHARACTERISTICS (CONTINUED)
Output V
olta
g
e
(1V / div)
SHDN
(5V / div)
Time (200ms / div)
Shutdown Response
I
LOAD = 100
μA
V
IN
= 4.0V
V
OUT =
3.0V
C
OUT =
10
μF
Thermal Shutdown Response
V
OUT
V
IN
= 6.0V
V
OUT =
2.8V
C
IN =
1
μF
C
OUT =
1
μF
Time (500ms / div)
3.6V
4.6V
Output Voltage
(50mV / div)
Input Voltage
(2V / div)
Output Voltage
(50mV / div)
Time (500ms / div)
V
OUT2
V
OUT1
Line Transient Response
C
OUT1 =
C
OUT2 = 1μF Tantalum
R
LOAD = 30kΩ
V
IN
Thermal Shutdown Response
V
OUT
V
IN
= 6.0V
V
OUT =
1.8V
C
IN =
1
μF
C
OUT =
1
μF
Time (500ms / div)
Thermal Shutdown Response
V
OUT
V
IN
= 6.0V
V
OUT =
3.0V
C
IN =
1
μF
C
OUT =
1
μF
Time (500ms / div)
3.6V
4.6V
Output Voltage
(50mV / div)
Input Voltage
(2V / div)
Output Voltage
(50mV / div)
Time (500ms / div)
V
OUT2
V
OUT1
Line Transient Response
C
OUT1
= C
OUT2
= 10
μF Ceramic
R
LOAD
= 30k
Ω
V
IN
![background image](/sites/default/files/pdfhtml_microchip/21527c010.png)
TC1306
DS21527C-page 10
© 2007 Microchip Technology Inc.
6.0
TYPICAL CHARACTERISTICS (CONTINUED)
Output Voltage
(20mV / div)
Output Voltage
(20mV / div)
Output Current
Load Transient Response
Time (500ms / div)
V
OUT2
V
OUT1
V
IN
= 5.5V
R
LOAD
= 30k
Ω
R
L
= 30
Ω
C
OUT1
= C
OUT2
= 10
μF Ceramic
100mA
100
μA
Load Transient Response
Output Voltage 2
(50mV / div)
Output Voltage 1
(20mV / div)
Output Current
Time (500ms / div)
V
OUT2
V
OUT1
V
IN
= 5.5V
R
LOAD
= 30k
Ω
R
L
= 30
Ω
C
OUT1
= C
OUT2
= 10
μF Ceramic
100mA
100
μA
V
OUT2
V
OUT1
/Shdn1 = /Shdn2
3.0V
1.8V
Output Voltage 1
(1V / div)
Time (20ms / div)
Wake-Up Response
Output Voltage 2
(1V / div)
C
OUT1
= C
OUT2
= 1
μF Tantalum
V
IN
= 5.5V
R
LOAD
= 30k
Ω
Output Voltage
(20mV / div)
Output Current
Output Voltage
(20mV / div)
Time (500ms / div)
V
OUT2
V
OUT1
Thermal Shutdown Response
V
IN
= 5.5V
R
LOAD
= 30k
Ω
R
L
= 30
Ω
C
OUT1
= C
OUT2
= 1
μF Tantalum
100mA
100
μA
Output Voltage 2
(50mV / div)
Output Current
Output Voltage 1
(20mV / div)
Time (500ms / div)
V
OUT2
V
OUT1
V
IN
= 5.5V
R
LOAD
= 30k
Ω
R
L
= 30
Ω
C
OUT1
= C
OUT2
= 1
μF Tantalum
100mA
100
μA
Thermal Shutdown Response