A Microchip Technology Company
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 29 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 23 dBm
– ~3% added EVM up to 21 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 23 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~23%/210 mA @ P
OUT
= 22 dBm for 802.11g
– ~25%/240 mA @ P
OUT
= 23 dBm for 802.11b
• Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
• Low idle current
– ~70 mA I
CQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
SST12LP14A is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for high-power applications with good
power-added efficiency while operating over the 2.4-2.5 GHz frequency band, it
typically provides 29 dB gain with 23% power-added efficiency at 22 dBm.
SST12LP14A has excellent linearity while meeting 802.11g spectrum mask at 23
dBm. The excellent on-chip power detector provides a reliable solution to board-
level power control. SST12LP14A is offered in 16-contact VQFN package.
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
2
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Product Description
SST12LP14A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14A can be easily configured for high-power applications with good power-added effi-
ciency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 29 dB gain with 23%
power-added efficiency @ P
OUT
= 22 dBm for 802.11g and 25% power-added efficiency @ P
OUT
= 23
dBm for 802.11b.
The SST12LP14A has excellent linearity, typically ~3% added EVM at 21 dBm output power with
54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LP14A can
also be configured for high-efficiency operation (typically 85 mA total power consumption at 17 dBm
linear 54 Mbps 802.11g output power) which is desirable in embedded applications such as in hand-
held units.
The SST12LP14A also features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes
the SST12LP14A controllable by an on/off switching signal directly from the baseband chip. These fea-
tures coupled with low operating current make the SST12LP14A ideal for the final stage power amplifi-
cation in battery-powered 802.11b/g/n WLAN transmitter applications.
SST12LP14A has an excellent on-chip, single-ended power detector, which features a wide dynamic-
range (>15 dB) with dB-wise linear operation and high stability over temperature (< +/-0.3 dB 0°C to
+85°C), frequency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1
output VSWR all phases). The excellent on-chip power detector provides a reliable solution to board-
level power control.
The SST12LP14A is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table
1 for pin descriptions.
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
3
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
2
5
6
8
16
VCC1
15
1
14
NC
NC
4
9
11
12
10
13
NC
VCCb
VREF
VREF
NC
VCC2
RFOUT
RFOUT
Det
NC
3
RFIN
RFIN
NC
Bias Circuit
7
1300 B1.0
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 16-contact VQFN
Pin Descriptions
Table 1: Pin Description
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground
with several low inductance, low resistance vias
NC
1
No Connection
Unconnected pin
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
NC
4
No Connection
Unconnected pin
VCCb
5
Power Supply
PWR
Supply voltage for bias circuit
VREF
6
PWR
1
st
and 2
nd
stage idle current control
VREF
7
PWR
1
st
and 2
nd
stage idle current control
NC
8
No Connection
Unconnected pin
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
VCC2
12
Power Supply
PWR
Power supply, 2
nd
stage
NC
13
No Connection
Unconnected pin
NC
14
No Connection
Unconnected pin
NC
15
No Connection
Unconnected pin
VCC1
16
Power Supply
PWR
Power supply, 1
st
stage
T1.0 75045
5
6
8
16
VCC1
15
14
NC
NC
9
11
12
10
13
NC
VCCb
VREF
VREF
NC
VCC2
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
NC
7
1300 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
5
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 18 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pins 2 and 3 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 5, 12, and 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pins 6 and 7 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
V
DD
Industrial
-40°C to +85°C
3.3V
T2.1 75045
Table 3: DC Electrical Characteristics
Symbol
Parameter
Min.
Typ
Max. Unit Test Conditions
V
CC
Supply Voltage at pins 5, 12, 16
3.0
3.3
4.2
V
I
CC
Supply Current
for 802.11g, 22 dBm
210
mA
for 802.11b, 23 dBm
230
mA
I
CQ
Idle current for 802.11g to meet EVM<4% @ 21dBm
70
mA
I
OFF
Shut down current
0.1
µA
V
REG
Reference Voltage for, with 110
resistor
2.75
2.85
2.95
V
T3.1 75045
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
6
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Table 4: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2400
2485
MHz
P
OUT
Output power
@ PIN = -6 dBm 11b signals
22
dBm
@ PIN = -7 dBm 11g signals
21
dBm
G
Small signal gain
28
29
dB
G
VAR1
Gain variation over band (2400~2485 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
22
23
dBm
Meet 11g OFDM 54 Mbps spectrum mask
22
23
dBm
Added EVM @ 21 dBm output with 11g OFDM 54 Mbps signal
3
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without external filters
-40
dBc
T4.2 75045
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
7
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise specified
Figure 3: S-Parameters
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 11.0
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 11.0
Frequency (GHz)
S11
(dB)
Frequency (GHz)
S21
(dB)
S22
(dB)
Frequency (GHz)
S12
(dB)
Frequency (GHz)
1300
S-Parms.0.0
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
8
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, 54 Mbps 802.11g OFDM signal
Figure 4: EMV versus Output Power using Sequence plus Equalizer Channel Estimation
Figure 5: Power Gain versus Output Power
0
1
2
3
4
5
6
7
8
9
10
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
EVM (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1300 F3.0
14
16
18
20
22
24
26
28
30
32
34
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
Power Gain (dB)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1300 F4.0
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
9
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Figure 6: Total Current Consumption for 802.11g operation versus Output Power
Figure 7: PAE versus Output Power
60
80
100
120
140
160
180
200
220
240
260
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
Supply Current (mA)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1300 F5.0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
PAE (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1300 F6.0
©2012 Silicon Storage Technology, Inc.
DS75045A
02/12
10
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14A
Data Sheet
A Microchip Technology Company
Figure 8: 802.11g Spectrum Mask at 23 dBm
Figure 9: CH1 Detector Characteristics Over Temperature with 2:1 Output VSWR All
Phases
-70
-60
-50
-40
-30
-20
-10
0
10
2.3 5
2.4 0
2.45
2.50
2.55
Freq = 2.412 GHZ
Freq = 2.442 GHz
Freq = 2.484 GHz
Frequency (GHz)
1300
AmpVSFreq.0.0
Amplitude
(dB)
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
0
2
4
6
8
10
12
14
16
18
20
22
24
Freq = 2.412 GHz (0 C)
Output Power (dBm)
Detector
V
olta
g
e
(V)
1300
CH1
OFDM.0.0
Freq = 2.412 GHz (25 C)
Freq = 2.412 GHz (85 C)
Freq = 2.412 GHz (Min)
Freq = 2.412 GHz (Max)