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OPRIET
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A Microchip Technology Company
©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 28 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 23.5 dBm
– ~2.5% added EVM up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~30.8%/220 mA @ P
OUT
= 23.5 dBm for both 802.11g
and 802.11b
• Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
• Low idle current
– ~70 mA I
CQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 12-contact XQFN – 2mm x 2mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. It is easily configured for high-power applications with excel-
lent (30.8%) power-added efficiency, operating over the 2.4- 2.5 GHz frequency band
and meeting 802.11 b/g spectrum mask at 23.5 dBm. The SST12LP07A has excellent
linearity, typically ~2.5% added EVM at 20 dBm output power, which is essential for 54
Mbps 802.g/n operation. The Power Amplifier has an excellent on-chip, single-ended
power detector, providing a reliable solution to board-level power control. The
SST12LP07A is offered in a 12-contact XQFN package.
PR
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
2
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Product Description
The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.
The SST12LP07A can be easily configured for high-power applications with good power-added effi-
ciency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 28 dB gain with
30.8% power-added efficiency @ P
OUT
= 23.5 dBm for both 802.11g and 802.11b.
The SST12LP07A has excellent linearity, typically ~2.5% added EVM at 20 dBm output power which is
essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm.
The SST12LP07A also features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes
the SST12LP07A controllable by an on/off switching signal directly from the baseband chip. These fea-
tures coupled with low operating current make the SST12LP07A ideal for the final stage power amplifi-
cation in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP07A has an excellent on-chip, single-ended power detector, which features wide-range
(>15 dB) with dB-wise linearization. The excellent on-chip power detector provides a reliable solution
to board-level power control.
The SST12LP07A is offered in 12-contact XQFN package. See Figure 2 for pin assignments and Table
1 for pin descriptions.
PR
OPRIET
AR
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
3
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
12
NC
11
10
NC
VCC1
7
9
8
VCCb
VREF
DET
NC
RFOUT/VCC2
NC
NC
2
1
3
RFIN
NC
4
5
6
1391 B1.2
Bias Circuit
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 12-contact XQFN
Pin Descriptions
Table 1: Pin Description
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
Low-inductance GND pad
NC
1
No Connection
Unconnected pin
RFIN
2
I
RF input, DC decoupled
NC
3
No Connection
Unconnected pin
VCCb
4
Power Supply
PWR
Supply voltage for bias circuit
VREF
5
PWR
1
st
and 2
nd
stage idle current control
Det
6
O
On-chip power detector
NC
7
No Connection
Unconnected pin
VCC2/RFOUT
8
Power Supply
PWR/O
Power Supply, 2
nd
stage / RF output
NC
9
No Connection
Unconnected pin
NC
10
No Connection
Unconnected pin
VCC1
11
Power Supply
PWR
Power supply, 1
st
stage
NC
12
No Connection
Unconnected pin
T1.0 75035
12
NC
11
10
NC
VCC1
7
9
8
VCCb
VREF
DET
NC
RFOUT/VCC2
NC
NC
2
1
3
RFIN
NC
4
5
6
1391 P1.1
Top View
(Contacts
facing down)
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 10 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pin 2 (P
IN
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 4, 8, and 11 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pin 5 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
)
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
V
CC
Industrial
-40°C to +85°C
3.3V
T2.1 75035
Table 3: DC Electrical Characteristics at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 4, 8, 11
3.0
3.3
4.2
V
I
CC
Supply Current
for 802.11g, 23.5 dBm
220
mA
for 802.11b, 23.5 dBm
220
mA
I
CQ
Idle current for 802.11g to meet EVM ~2.5% @ 20 dBm
70
mA
V
REG
Reference Voltage for, with 130
resistor
2.75
2.85
2.95
V
T3.1 75035
PR
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
6
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Table 4: AC Electrical Characteristics for Configuration at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2412
2484
MHz
G
Small signal gain
27
28
dB
G
VAR1
Gain variation over band (2412–2484 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
23
dBm
Meet 11g OFDM 54 Mbps spectrum mask
23
dBm
Added EVM @ 20 dBm output with 11g OFDM 54 Mbps signal
2.5
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without external filters
-40
dBc
T4.2 75035
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
7
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise specified
Figure 3: S-Parameters
S11 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S11
(dB)
Frequency (GHz)
S21
(dB)
S22
(dB)
Frequency (GHz)
S12
(dB)
Frequency (GHz)
1391 S-Parms.1.0
S12 versus Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
S21 versus Frequency
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
S22 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, 54 Mbps 802.11g OFDM Signal
Figure 4: EVM versus Output Power
Figure 5: Power Gain versus Output Power
EVM versus Output Power
0
1
2
3
4
5
6
7
8
9
10
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
EVM (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1391 F1.0
1391 F2.0
Power Gain versus Output Power
20
22
24
26
28
30
32
34
36
38
40
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Power Gain (dB)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Figure 6: Total Current Consumption for 802.11g operation versus Output Power
Figure 7: PAE versus Output Power
1391 F3.0
Supply Current versus Output Power
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Supply Current (mA)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1391 F4.0
PAE versus Output Power
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
PAE (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
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©2012 Silicon Storage Technology, Inc.
DS75035B
05/12
10
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
A Microchip Technology Company
Figure 8: Detector Characteristics versus Output Power
Figure 9: 802.11g Spectrum Mask at 23.5 dBm, Total Current 220 mA
1391 F5.0
Detector Voltage versus Output Power
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Detector Voltage (V)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
-70
-60
-50
-40
-30
-20
-10
0
10
2.3 5
2.4 0
2.45
2.50
2.55
Freq = 2.412 GHZ
Freq = 2.442 GHz
Freq = 2.484 GHz
Frequency (GHz)
1391 F6.0
Amplitude
(dB)