2002-2012 Microchip Technology Inc.
DS21421E-page 1
TC4423/TC4424/TC4425
Features
• High Peak Output Current: 3A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 1800 pF in 25 ns
• Short Delay Times: <40 ns (typ)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 3.5 mA (Max)
- With Logic ‘0’ Input – 350 µA (Max)
• Low Output Impedance: 3.5
(typ)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• ESD Protected: 4 kV
• Pin compatible with the TC1426/TC1427/TC1428,
TC4426/TC4427/TC4428 and TC4426A/
TC4427A/TC4428A devices.
• Space-saving 8-Pin 6x5 DFN Package
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
General Description
The TC4423/TC4424/TC4425 devices are a family of
3A, dual-output buffers/MOSFET drivers. Pin compati-
ble with the TC1426/27/28, TC4426/27/28 and
TC4426A/27A/28A dual 1.5A driver families, the
TC4423/24/25 family has an increased latch-up current
rating of 1.5A, making them even more robust for
operation in harsh electrical environments.
As MOSFET drivers, the TC4423/TC4424/TC4425 can
easily charge 1800 pF gate capacitance in under
35 nsec, providing low enough impedances in both the
on and off states to ensure the MOSFET's intended
state will not be affected, even by large transients.
The TC4423/TC4424/TC4425 inputs may be driven
directly from either TTL or CMOS (2.4V to 18V). In
addition, the 300 mV of built-in hysteresis provides
noise immunity and allows the device to be driven from
slowly rising or falling waveforms.
Package Types
(1)
8-Pin DFN
(2)
NC
IN A
GND
IN B
2
3
4
5
6
7
8
1
8-Pin PDIP
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
TC4423
TC4424
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
TC4423 TC4424
NC
OUT A
OUT B
V
DD
TC4423
TC4424
TC4425
NC
OUT A
OUT B
V
DD
1
2
3
4
5
6
7
8
16
13
12
11
10
9
NC
IN A
NC
GND
GND
NC
IN B
NC
NC
OUT A
V
DD
V
DD
OUT B
OUT B
NC
OUT A
15
14
TC4423
TC4424
TC4425
16-Pin SOIC (Wide)
NC
OUT A
V
DD
V
DD
OUT B
OUT B
NC
OUT A
OUT A
V
DD
V
DD
OUT B
OUT B
NC
OUT A
TC4423 TC4424 TC4425
NC
TC4425
TC4425
NC
OUT A
OUT B
V
DD
TC4423 TC4424
NC
OUT A
OUT B
V
DD
TC4425
NC
OUT A
OUT B
V
DD
3A Dual High-Speed Power MOSFET Drivers
TC4423/TC4424/TC4425
DS21421E-page 2
2002-2012 Microchip Technology Inc.
Functional Block Diagram
(1)
Effective
Input C = 20 pF
(Each Input)
TC4423
Dual Inverting
TC4424
Dual Non-inverting
TC4425
One Inverting, One Non-inverting
Output
Input
GND
V
DD
300 mV
4.7V
Inverting
Non-inverting
Note 1: Unused inputs should be grounded.
750 µA
2002-2012 Microchip Technology Inc.
DS21421E-page 3
TC4423/TC4424/TC4425
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B
................................................ (V
DD
+ 0.3V) to (GND – 5V)
Package Power Dissipation (T
A
70°C)
DFN ......................................................................... Note 2
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
–1
—
1
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
Low Output Voltage
V
OL
—
—
0.025
V
Output Resistance, High
R
OH
—
2.8
5
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
3.5
5
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
3
—
A
Latch-Up Protection With-
stand Reverse Current
I
REV
—
>1.5
—
A
Duty cycle
2%, t 300 µsec.
Switching Time (Note 1)
Rise Time
t
R
—
23
35
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Fall Time
t
F
—
25
35
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Delay Time
t
D1
—
33
75
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Delay Time
t
D2
—
38
75
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Power Supply
Power Supply Current
I
S
—
—
1.5
0.15
2.5
0.25
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1:
Switching times ensured by design.
2:
Package power dissipation is dependent on the copper pad area on the PCB.
TC4423/TC4424/TC4425
DS21421E-page 4
2002-2012 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
–10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
Low Output Voltage
V
OL
—
—
0.025
V
Output Resistance, High
R
OH
—
3.7
8
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
4.3
8
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
3.0
—
A
Latch-Up Protection
Withstand Reverse Current
I
REV
—
>1.5
—
A
Duty cycle
2%, t 300 µsec
Switching Time (Note 1)
Rise Time
t
R
—
28
60
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Fall Time
t
F
—
32
60
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Delay Time
t
D1
—
32
100
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Delay Time
t
D2
—
38
100
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Power Supply
Power Supply Current
I
S
—
—
2.0
0.2
3.5
0.3
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1: Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
T
A
0
—
+70
°C
Specified Temperature Range (E)
T
A
–40
—
+85
°C
Specified Temperature Range (V)
T
A
–40
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
–65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
JA
—
33.2
—
°C/W
Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
JA
—
125
—
°C/W
Thermal Resistance, 16L-SOIC
JA
—
155
—
°C/W
2002-2012 Microchip Technology Inc.
DS21421E-page 5
TC4423/TC4424/TC4425
2.0
TYPICAL PERFORMANCE CURVES
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Rise and Fall Times vs.
Temperature.
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
FIGURE 2-6:
Propagation Delay vs. Input
Amplitude.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
4
6
8
10
12
14
16
18
2200 pF
100
80
60
40
20
0
1000 pF
3300 pF
1500 pF
4700 pF
470 pF
t
RISE
(nsec)
V
DD
(V)
100
1000
10,000
5V
10V
15V
100
80
60
40
20
0
t
RISE
(nsec)
C
LOAD
(pF)
Time (nsec)
32
30
28
26
24
22
20
18
-55
-35
5
25
45
65
85
105 125
-15
t
FALL
t
RISE
T
A
(°C)
t
FALL
t
RISE
C
LOAD
= 2200 pF
4
6
8
10
12
14
16
18
100
80
60
40
20
0
1000 pF
1500 pF
4700 pF
3300 pF
2200 pF
470 pF
t
FALL
(nsec)
V
DD
(V)
100
1000
10,000
5V
10V
15V
100
80
60
40
20
0
t
FALL
(nsec)
C
LOAD
(pF)
100
80
60
40
20
Delay Time (nsec)
Input (V)
0
1
2
3
4
5
6
7
8
9
10 11 12
t
D1
t
D2
C
LOAD
= 2200 pF
V
DD
= 10V
TC4423/TC4424/TC4425
DS21421E-page 6
2002-2012 Microchip Technology Inc.
Typical Performance Curves (Continued)
FIGURE 2-7:
Propagation Delay Time vs.
Supply Voltage.
FIGURE 2-8:
Quiescent Current vs.
Supply Voltage.
FIGURE 2-9:
Output Resistance
(Output High) vs. Supply Voltage.
FIGURE 2-10:
Propagation Delay Time vs.
Temperature.
FIGURE 2-11:
Quiescent Current vs.
Temperature.
FIGURE 2-12:
Output Resistance
(Output Low) vs. Supply Voltage.
50
45
40
35
30
25
20
4
6
8
10
12
14
16
18
Delay Time (nsec)
V
DD
(V)
C
LOAD
= 2200 pF
t
D1
t
D2
1
0.1
0.01
4
6
8
10
12
14
16
18
Both Inputs = 1
Both Inputs = 0
V
DD
(V)
I
QUIESCENT
(mA)
T
A
= 25°C
14
12
10
8
6
4
2
4
6
8
10
12
14
16
18
Typical @
T
A
= +25
°C
Worst Case
@ T
J
= +150
°C
V
DD
(V)
R
DS(ON)
(
Ω
)
50
45
40
35
30
25
20
Delay Time (nsec)
-55
-35
-15
5
25
45
65
85
105 125
t
D2
t
D1
C
LOAD
= 2200 pF
T
A
(°C)
-55
-35
-15
5
25
45
65
85
105 125
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Both Inputs = 1
Both Inputs = 0
T
A
(°C)
I
QUIESCENT
(mA)
14
12
10
8
6
4
2
4
6
8
10
12
14
16
18
Worst Case
@ T
J
= +150
°C
V
DD
(V)
Typical @
T
A
= +25
°C
R
DS(ON)
(
Ω
)
2002-2012 Microchip Technology Inc.
DS21421E-page 7
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
Note: Load on single output only
FIGURE 2-13:
Supply Current vs.
Capacitive Load.
FIGURE 2-14:
Supply Current vs.
Capacitive Load.
FIGURE 2-15:
Supply Current vs.
Capacitive Load.
FIGURE 2-16:
Supply Current vs.
Frequency.
FIGURE 2-17:
Supply Current vs.
Frequency.
FIGURE 2-18:
Supply Current vs.
Frequency.
100
1000
10,000
60
50
40
30
20
10
0
355 kHz
200 kHz
35.5 kHz
634 kHz
C
LOAD
(pF)
112.5 kHz
20 kHz
63.4 kHz
V
DD
= 18V
I
SUPPLY
(mA)
100
1000
10,000
2 MHz
1.125 MHz
634 kHz
355 kHz
200 kHz
112.5 kHz
63.4 kHz
20 kHz
90
80
70
60
50
40
30
20
10
0
I
SUPPLY
(mA)
C
LOAD
(pF)
V
DD
= 12V
100
1000
10,000
634 kHz
355 kHz
112.5 kHz
20 kHz
2 MHz
1.125 MHz
3.55 MHz
120
100
80
60
40
20
0
C
LOAD
(pF)
I
SUPPLY
(mA)
V
DD
= 6V
10,000 pF
Frequency (kHz)
60
50
40
30
20
10
0
10
100
1000
3300 pF
100 pF
1000 pF
I
SUPPLY
(mA)
V
DD
= 18V
10,000 pF
10
100
1000
Frequency (kHz)
90
80
70
60
50
40
30
20
10
0
100 pF
3300 pF
1000 pF
I
SUPPLY
(mA)
V
DD
= 12V
10
100
1000
Frequency (kHz)
1000 pF
4700 pF
100 pF
120
100
80
60
40
20
0
10,000 pF
2200 pF
I
SUPPLY
(mA)
V
DD
= 6V
TC4423/TC4424/TC4425
DS21421E-page 8
2002-2012 Microchip Technology Inc.
Typical Performance Curves (Continued)
FIGURE 2-19:
TC4423 Crossover Energy.
10-8
8
10-7
A • sec
0
2
4
6
8
10
12
14
16
18
6
4
2
8
6
4
2
10-9
V
IN
(V)
Note:
The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single driver, divide the
stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
2002-2012 Microchip Technology Inc.
DS21421E-page 9
TC4423/TC4424/TC4425
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
(1)
3.1
Inputs A and B
Inputs A and B are TTL/CMOS compatible inputs that
control outputs A and B, respectively. These inputs
have 300 mV of hysteresis between the high and low
input levels, allowing them to be driven from slow rising
and falling signals, and to provide noise immunity.
3.2
Outputs A and B
Outputs A and B are CMOS push-pull outputs that are
capable of sourcing and sinking 3A peaks of current
(V
DD
= 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. These outputs also
have a reverse current latch-up rating of 1.5A.
3.3
Supply Input (V
DD
)
V
DD
is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized low-
impedance path for the peak currents that are to be
provided to the load.
3.4
Ground (GND)
Ground is the device return pin. The ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak currents will flow out
the ground pin(s) when the capacitive load is being
discharged.
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other cop-
per plane on a printed circuit board to aid in heat
removal from the package.
8-Pin PDIP
8-Pin
DFN
16-Pin
SOIC
(Wide)
Symbol
Description
1
1
1
NC
No connection
2
2
2
IN A
Input A
—
—
3
NC
No connection
3
3
4
GND
Ground
—
—
5
GND
Ground
—
—
6
NC
No connection
4
4
7
IN B
Input B
—
—
8
NC
No connection
—
—
9
NC
No connection
5
5
10
OUT B
Output B
—
—
11
OUT B
Output B
6
6
12
V
DD
Supply input
—
—
13
V
DD
Supply input
7
7
14
OUT A
Output A
—
—
15
OUT A
Output A
8
8
16
NC
No connection
—
PAD
—
NC
Exposed Metal Pad
Note 1:
Duplicate pins must be connected for proper operation.
TC4423/TC4424/TC4425
DS21421E-page 10
2002-2012 Microchip Technology Inc.
4.0
APPLICATIONS INFORMATION
FIGURE 4-1:
Inverting Driver Switching
Time.
FIGURE 4-2:
Non-inverting Driver
Switching Time.
0.1 µF
+5V
10%
90%
10%
90%
10%
90%
18V
1 µF
WIMA
MKS-2
0V
0V
TC4423
(1/2 TC4425)
1
2
C
L
= 1800 pF
Input
Input
Output
t
D1
t
F
t
D2
Input: 100 kHz,
square wave,
Output
t
R
V
DD
= 18V
t
RISE
= t
FALL
10 ns
Ceramic
90%
Input
t
D1
t
F
t
D2
Output
t
R
10%
10%
10%
+5V
18V
0V
0V
90%
90%
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 ns
0.1 µF
1 µF
WIMA
MKS-2
TC4424
(1/2 TC4425)
1
2
C
L
= 1800 pF
Input
Output
V
DD
= 18V
Ceramic