20001889F.book

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 2004-2016 Microchip Technology Inc.

DS20001889F-page 1

MCP111/112

Features

• Ultra-Low Supply Current: 1.75 µA (Max.)

• Precision Monitoring Options Of:

- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V, 

4.38V and 4.63V

• Resets Microcontroller in a Power-Loss Event

• Active-Low V

OUT

 Pin:

MCP111 Active-Low, Open-Drain

MCP112 Active-Low, Push-Pull

• Available in SOT23-3, TO-92, SC-70 and

SOT-89-3 Packages

• Temperature Range:

- Extended: -40°C to +125°C

(except MCP1XX-195)

- Industrial: -40°C to +85°C (MCP1XX-195 Only)

• Pb-Free Devices

Applications

• Critical Microcontroller and Microprocessor 

Power-Monitoring Applications

• Computers

• Intelligent Instruments

• Portable Battery-Powered Equipment

General Description

The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has stabilized at the appropriate level
for reliable system operation. These devices also
operate as protection from brown-out conditions when
the system supply voltage drops below the specified
threshold voltage level. Eight different trip voltages are
available. 

Package Types

Block Diagram

3-Pin SOT23-3/SC-70

V

DD

V

OUT

M

C

P

111

/1

1

2

1

2

 

3

V

SS

V

SS

V

OUT

3-Pin TO-92

V

DD

1

3

2

V

DD

V

SS

V

OUT

3-Pin SOT-89

V

DD

MCP111/112

V

DD

Comparator

+

Output

Driver

V

OUT

Band Gap
Reference

V

SS

DEVICE FEATURES

Device

Output

Reset Delay 

(typ.)

SOT-23/SC70 

Package Pin Out 

(Pin # 1, 2, 3)

Comment

Type

Pull-up Resistor

MCP111

Open-drain

External

No

V

OUT

, V

SS

, V

DD

MCP112

Push-pull

No

No

V

OUT

, V

SS

, V

DD

MCP102

Push-pull

No

120 ms

RST, V

DD

, V

SS

 

See MCP102/103/121/131 Data Sheet 
(DS20001906)

MCP103

Push-pull

No

120 ms

V

SS

, RST, V

DD

 

See MCP102/103/121/131 Data Sheet 
(DS20001906)

MCP121

Open-drain

External

120 ms

RST, V

DD

, V

SS

 

See MCP102/103/121/131 Data Sheet 
(DS20001906)

MCP131

Open-Drain

Internal (~95 k

)

120 ms

RST, V

DD

, V

SS

 

See MCP102/103/121/131 Data Sheet 
(DS20001906)

Micropower Voltage Detector

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MCP111/112

DS20001889F-page 2

 2004-2016 Microchip Technology Inc.

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings†

V

DD

...................................................................................7.0V

Input current (V

DD

) .......................................................10 mA

Output current (RST) ....................................................10 mA

Rated Rise Time of V

DD

.............................................100V/µs

All inputs and outputs (except RST) w.r.t. V

SS

.............................................................. -0.6V to (V

DD

 + 1.0V)

RST output w.r.t. V

SS

....................................... -0.6V to 13.5V

Storage temperature ..................................... 65°C to + 150°C

Ambient temp. with power applied ...............-40°C to + 125°C

Maximum Junction temp. with power applied ............... 150°C

ESD protection on all pins

2 kV

† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 (only MCP111),

T

A

 = -40°C to +125°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Operating Voltage Range

V

DD

1.0

5.5

V

Specified V

DD

 Value to V

OUT

 low

V

DD

1.0

V

RST

 = 10 µA, V 

RST

 < 0.2V

Operating Current

I

DD

< 1

1.75

µA

V

DD

 Trip Point

MCP1XX-195

V

TRIP

1.872

1.900

1.929

V

T

A

 = +25°C (

Note 1

)

1.853

1.900

1.948

V

T

A

 = -40°C to +85°C (

Note 2

)

MCP1XX-240

2.285

2.320

2.355

V

T

A

 = +25°C (

Note 1

)

2.262

2.320

2.378

V

Note 2

MCP1XX-270

2.591

2.630

2.670

V

T

A

 = +25°C (

Note 1

)

2.564

2.630

2.696

V

Note 2

MCP1XX-290

2.857

2.900

2.944

V

T

A

 = +25°C (

Note 1

)

2.828

2.900

2.973

V

Note 2

MCP1XX-300

2.886

2.930

2.974

V

T

A

 = +25°C (

Note 1

)

2.857

2.930

3.003

V

Note 2

MCP1XX-315

3.034

3.080

3.126

V

T

A

 = +25°C (

Note 1

)

3.003

3.080

3.157

V

Note 2

MCP1XX-450

4.314

4.380

4.446

V

T

A

 = +25°C (

Note 1

)

4.271

4.380

4.490

V

Note 2

MCP1XX-475

4.561

4.630

4.700

V

T

A

 = +25°C (

Note 1

)

4.514

4.630

4.746

V

Note 2

V

DD

 Trip Point Tempco

T

TPCO

±100

ppm/°

C

Note

1:

Trip point is ±1.5% from typical value.

2:

Trip point is ±2.5% from typical value.

3:

This specification allows this device to be used in PIC

®

 microcontroller applications that require the In-Circuit Serial 

Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This 
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V

OUT

). The total 

time that the V

OUT

 pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the V

OUT

 

pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C 
to 70°C (+25°C preferred). For additional information, please refer to 

Figure 2-28

.

4:

This parameter is established by characterization and is not 100% tested.

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 2004-2016 Microchip Technology Inc.

DS20001889F-page 3

MCP111/112

Threshold Hysteresis
min. = 1%, max = 6%)

MCP1XX-195

V

HYS

0.019

0.114

V

T

A

 = +25°C

MCP1XX-240

0.023

0.139

V

MCP1XX-270

0.026

0.158

V

MCP1XX-290

0.029

0.174

V

MCP1XX-300

0.029

0.176

V

MCP1XX-315

0.031

0.185

V

MCP1XX-450

0.044

0.263

V

MCP1XX-475

0.046

0.278

V

V

OUT

 Low-level Output Voltage

V

OL

0.4

V

I

OL 

= 500 µA, V

DD 

= V

TRIP(MIN)

V

OUT

 High-level Output Voltage

V

OH

V

DD

 – 0.6

V

I

OH

 = 1 mA, For only MCP112 

(push-pull output)

Open-drain High Voltage on Output

V

ODH

 —

13.5 

(3)

 

V

MCP111 only,
V

DD

 = 3.0V, Time voltage > 

5.5V applied 

 100s, 

current into pin limited to 
2 mA, +25°C operation 
recommended 

Note 3

Note 4

Open-drain Output Leakage Current 
(MCP111 only)

I

OD

0.1

µA

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 (only MCP111),

T

A

 = -40°C to +125°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Note

1:

Trip point is ±1.5% from typical value.

2:

Trip point is ±2.5% from typical value.

3:

This specification allows this device to be used in PIC

®

 microcontroller applications that require the In-Circuit Serial 

Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This 
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V

OUT

). The total 

time that the V

OUT

 pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the V

OUT

 

pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C 
to 70°C (+25°C preferred). For additional information, please refer to 

Figure 2-28

.

4:

This parameter is established by characterization and is not 100% tested.

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MCP111/112

DS20001889F-page 4

 2004-2016 Microchip Technology Inc.

FIGURE 1-1:

Timing Diagram.

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 

(only MCP111), T

A

 = -40°C to +125°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

V

DD

 Detect to V

OUT

 Inactive

t

RPU

90

µs

Figure 1-1

 and C

L

 = 50 pF

(

Note 1

)

V

DD

 Detect to V

OUT

 Active

t

RPD

130

µs

V

DD

 ramped from V

TRIP(MAX)

 + 

250 mV down to V

TRIP(MIN)

 – 

250 mV, per 

Figure 1-1

,

C

L

 = 50 pF (

Note 1

)

V

OUT

 Rise Time After V

OUT 

Active

t

RT

5

µs

For V

OUT

 10% to 90% of final 

value per 

Figure 1-1

, C

L

 = 50 pF

(

Note 1

)

Note 1:

These parameters are for design guidance only and are not 100% tested.

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 

(MCP111 only), T

A

 = -40°C to +125°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Specified Temperature Range

T

A

-40

+85

°C

MCP1XX-195

Specified Temperature Range

T

A

-40

+125

°C

Except MCP1XX-195

Maximum Junction Temperature

T

J

+150

°C

Storage Temperature Range

T

A

-65

+150

°C

Package Thermal Resistances

Thermal Resistance, 3L-SOT23

JA

336

°C/W

Thermal Resistance, 3L-SC-70

JA

340

°C/W

Thermal Resistance, 3L-TO-92

JA

131.9

°C/W

Thermal Resistance, 3L-SOT-89

JA

110

°C/W

1V

1V

V

TRIP

V

DD

V

OUT

t

RPU

V

OH

t

RT

t

RPD

V

OL

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DS20001889F-page 5

MCP111/112

2.0

TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 (only MCP111;

see Figure 4-1), T

A

 = -40°C to +125°C.

FIGURE 2-1:

I

DD 

vs. Temperature 

(MCP111-195).

FIGURE 2-2:

I

DD

 vs. Temperature 

(MCP112-300).

FIGURE 2-3:

I

DD

 vs. Temperature 

(MCP112-475).

FIGURE 2-4:

I

DD

 vs. V

DD

 (MCP111-195).

FIGURE 2-5:

I

DD

 vs. V

DD

 (MCP112-300).

FIGURE 2-6:

I

DD

 vs. V

DD

 (MCP112-475).

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

-40

-20

0

20

40

60

80

100

120

140

Temperature (°C)

I

DD

 (uA)

1.7V

1.0V

2.1V

2.8V

4.0V

5.0V

5.5V

MCP111-195

0

0.2

0.4

0.6

0.8

1

1.2

-40

-20

0

20

40

60

80

100

120

140

Temperature (°C)

I

DD

 (uA)

1.7V

1.0V

2.1V

2.8V

4.0V

5.0V

MCP112-300

5.5V

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

-40

-20

0

20

40

60

80

100

120

140

Temperature (°C)

I

DD

 (uA)

1.7V

1.0V

2.1V

2.8V

4.0V

5.0V

5.5V

MCP112-475

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.0

2.0

3.0

4.0

5.0

6.0

V

DD 

(V)

I

DD

 (uA)

-40°C

+25°C

+85°C

+125°C

MCP111-195

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.0

2.0

3.0

4.0

5.0

6.0

V

DD 

(V)

I

DD

 (uA)

MCP112-300

-40°C

+25°C

+85°C

+125°C

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.0

2.0

3.0

4.0

5.0

6.0

V

DD 

(V)

I

DD

 (uA)

MCP112-475

-40°C

+25°C

+85°C

+125°C

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MCP111/112

DS20001889F-page 6

 2004-2016 Microchip Technology Inc.

Note: Unless otherwise indicated, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 (only MCP111;

see Figure 4-1), T

A

 = -40°C to +125°C.

FIGURE 2-7:

V

TRIP

 and V

HYST

 vs. 

Temperature (MCP111-195).

FIGURE 2-8:

V

TRIP

 and V

HYST

 vs. 

Temperature (MCP112-300).

FIGURE 2-9:

V

TRIP

 and V

HYST

 vs. 

Temperature (MCP112-475).

FIGURE 2-10:

V

OL

 vs. I

OL

 

(MCP111-195  @ V

DD

 = 1.7V).

FIGURE 2-11:

V

OL

 vs. I

OL

 

(MCP112-300  @ V

DD

 = 2.7V).

FIGURE 2-12:

V

OL

 vs. I

OL

 

(MCP112-475  @ V

DD

 = 4.4V).

1.895

1.900

1.905

1.910

1.915

1.920

1.925

1.930

1.935

1.940

1.945

1.950

-60

-10

40

90

140

Temperature (°C)

V

TR

IP

 (V

)

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

0.050

Hyst (V

)

V

TRIP

, V decreasing

V

TRIP

, V increasing

V

HYS

, Hysteresis

MCP111-195
max temp is
+85°C

2.900

2.920

2.940

2.960

2.980

3.000

3.020

3.040

-60

-10

40

90

140

Temperature (°C)

V

TR

IP

 (V

)

0.082

0.084

0.086

0.088

0.090

0.092

0.094

0.096

0.098

0.100

Hyst (V

)

MCP112-300

V

TRIP

, V decreasing

V

TRIP

, V increasing

V

HYS

, Hysteresis

4.580

4.600

4.620

4.640

4.660

4.680

4.700

4.720

4.740

4.760

4.780

4.800

-60

-20

20

60

100

140

Temperature (°C)

V

TR

IP

 (V

)

0.100

0.110

0.120

0.130

0.140

0.150

0.160

0.170

0.180

Hyst (V

)

MCP112-475

V

TRIP

, V decreasing

V

TRIP

, V increasing

V

HYS

, Hysteresis

0.000

0.020

0.040

0.060

0.080

0.100

0.120

0.00

0.25

0.50

0.75

1.00

I

OL

 (mA)

V

OL

 (V

)

-40°C

+25°C

+85°C

+125°C

MCP111-195
V

DD

 = 1.7V

0.000

0.010

0.020

0.030

0.040

0.050

0.060

0.070

0.080

0.00

0.25

0.50

0.75

1.00

I

OL

 (mA)

V

OL

 (V

)

MCP112-300
V

DD

 = 2.7V

-40°C

+25°C

+85°C

+125°C

0.000

0.010

0.020

0.030

0.040

0.050

0.00

0.25

0.50

0.75

1.00

I

OL

 (mA)

V

OL

 (V

)

MCP112-475
V

DD

 = 4.4V

-40°C

+25°C

+85°C

+125°C

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DS20001889F-page 7

MCP111/112

Note: Unless otherwise indicated, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 (only MCP111;

see Figure 4-1), T

A

 = -40°C to +125°C.

FIGURE 2-13:

V

OL

 vs. Temperature 

(MCP111-195 @ V

DD

 = 1.7V).

FIGURE 2-14:

V

OL

 vs. Temperature 

(MCP112-300 @ V

DD

 = 2.7V).

FIGURE 2-15:

V

OL

 vs. Temperature 

(MCP112-475 @ V

DD

 = 4.4V).

FIGURE 2-16:

V

OH

 vs. I

OH

 

(MCP112-300 @ V

DD

 = 3.1V).

FIGURE 2-17:

V

OH

 vs. I

OH

 

(MCP112-475 @ V

DD

 = 4.8V).

FIGURE 2-18:

Typical Transient Response 

(25 °C).

0.000

0.020

0.040

0.060

0.080

0.100

0.120

-40

0

40

80

120

Temperature (°C)

V

OL

 (V

)

I

OL

 = 0.00 mA

MCP111-195
V

DD

 = 1.7 V

I

OL

 = 0.25 mA

I

OL

 = 0.50 mA

I

OL

 = 0.75 mA

I

OL

 = 1.00 mA

0.000

0.010

0.020

0.030

0.040

0.050

0.060

0.070

0.080

-40

0

40

80

120

Temperature (°C)

V

OL

 (V

)

MCP112-300
V

DD

 = 2.7V

I

OL

 = 0.00 mA

I

OL

 = 0.25 mA

I

OL

 = 0.50 mA

I

OL 

= 0.75 mA

I

OL

 = 1.00 mA

0.000

0.010

0.020

0.030

0.040

0.050

-40

0

40

80

120

Temperature (°C)

V

OL

 (V

)

I

OL

 = 0.00 mA

I

OL

 = 0.25 mA

I

OL

 = 0.50 mA

I

OL

 = 0.75 mA

I

OL

 = 1.00 mA

MCP112-475
V

DD

 = 4.4V

2.900

2.950

3.000

3.050

3.100

3.150

0.00

0.25

0.50

0.75

1.00

I

OL

 (mA)

V

OH

 (V

)

-40 °C

+25 °C

+85 °C

+125 °C

MCP112-300
V

DD

 = 3.1V

4.680

4.700

4.720

4.740

4.760

4.780

4.800

4.820

0.00

0.25

0.50

0.75

1.00

I

OL

 (mA)

V

OH

 (V

)

MCP112-475
V

DD

 = 4.8V

-40 °C

+25 °C

+85 °C

+125 °C

0

100

200

300

400

500

600

0.001

0.01

0.1

1

10

V

TRIP

(min) - V

DD

Transi

ent

 D

u

rat

ion (

µ

s)

MCP111-195

MCP112-475

MCP112-300

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background image

MCP111/112

DS20001889F-page 8

 2004-2016 Microchip Technology Inc.

Note: Unless otherwise indicated, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 (only MCP111;

see Figure 4-1), T

A

 = -40°C to +125°C.

FIGURE 2-19:

t

RPD

 vs. Temperature 

(MCP111-195).

FIGURE 2-20:

t

RPD

 vs. Temperature 

(MCP112-300).

FIGURE 2-21:

t

RPD

 vs. Temperature 

(MCP112-475).

FIGURE 2-22:

t

RPU

 vs. Temperature 

(MCP111-195).

FIGURE 2-23:

t

RPU

 vs. Temperature 

(MCP112-300).

FIGURE 2-24:

t

RPU

 vs. Temperature 

(MCP112-475).

0

50

100

150

200

250

300

350

-40

-15

10

35

60

85

110

Temperature (°C)

t

RPD

 (µs)

V

DD

 decreasing from:

V

TRIP(max)

 + 0.25V to V

TRIP(min)

 - 0.25V

V

DD

 decreasing from:

5V - 1.7V

V

DD

 decreasing from:

5V - 0V

MCP111-195

0

20

40

60

80

100

120

140

160

-40

-15

10

35

60

85

110

Temperature (°C)

t

RPD

 (µ

s

)

V

DD

 decreasing from:

V

TRIP(max)

 + 0.25V to V

TRIP(min)

 - 0.25V

V

DD

 decreasing from:

5V - 2.7V

V

DD

 decreasing from:

5V - 0V

MCP112-300

0

50

100

150

200

250

-40

-15

10

35

60

85

110

Temperature (°C)

t

RPD

 (µs)

V

DD

 decreasing from:

V

TRIP(max)

 + 0.25V to V

TRIP(min)

 - 0.25V

V

DD

 decreasing from:

5V - 4.4V

V

DD

 decreasing from:

5V - 0V

MCP112-475

0

50

100

150

200

250

300

350

400

-40

-15

10

35

60

85

110

Temperature (°C)

t

RPU

 (µ

s

)

V

DD

 increasing from:

0V - 2.1V

V

DD

 increasing

from: 0V - 5.5V

V

DD

 increasing from:

0V - 2.8V

V

DD

 increasing

from:  0V - 4.0V

MCP111-195

0

20

40

60

80

100

120

140

-40

-15

10

35

60

85

110

Temperature (°C)

t

RPU

 (µs)

V

DD

 increasing from:

0V - 3.1V

V

DD

 increasing from:

0V - 5.5V

V

DD

 increasing from:

0V - 3.3V

V

DD

 increasing from:

0V - 4.0V

MCP112-300

0

50

100

150

200

250

-40

-15

10

35

60

85

110

Temperature (°C)

t

RPU

 (µs)

V

DD

 increasing from:

0V - 4.9V

V

DD

 increasing from:

0V - 5.0V

V

DD

 increasing from:

0V - 5.5V

MCP112-475

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background image

 2004-2016 Microchip Technology Inc.

DS20001889F-page 9

MCP111/112

Note: Unless otherwise indicated, all limits are specified for V

DD

 = 1V to 5.5V, R

PU

 = 100 k

 (only MCP111;

see Figure 4-1), T

A

 = -40°C to +125°C.

FIGURE 2-25:

t

RT

 vs. Temperature 

(MCP111-195).

FIGURE 2-26:

t

RT

 vs. Temperature 

(MCP112-300).

FIGURE 2-27:

t

RT

 vs. Temperature 

(MCP112-475).

FIGURE 2-28:

Open-Drain Leakage 

Current vs. Voltage Applied to V

OUT

 Pin 

(MCP111-195).

20

25

30

35

40

45

50

55

60

-40

-15

10

35

60

85

110

Temperature (°C)

t

RT

 (µ

s

)

V

DD

 increasing from:

0V - 2.1V

V

DD

 increasing from:

0V - 5.5V

V

DD

 increasing from:

0V - 2.8V

V

DD

 increasing

from: 0V - 4.0V

MCP111-195

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

-40

-15

10

35

60

85

110

Temperature (°C)

t

RT

 (µs)

V

DD

 increasing from:

0V - 3.1V

V

DD

 increasing from:

0V - 5.5V

V

DD

 increasing from:

0V - 3.3V

V

DD

 increasing from:

0V - 4.0V

MCP112-300

0.0800

0.0900

0.1000

0.1100

0.1200

0.1300

0.1400

0.1500

-40

-15

10

35

60

85

110

Temperature (°C)

t

RT

 (µs)

V

DD

 increasing from:

0V - 4.8V

V

DD

 increasing from:

0V - 5.5V

V

DD

 increasing from:

0V - 4.9V

V

DD

 increasing from:

0V - 5.0V

MCP112-475

1.E-13

1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

0

1

2

3

4

5

6

7

8

9 10 11 12 13 14

Pull-Up Voltage (V)

Op

en

-D

rai

n

 L

eak

ag

e (A

)

125°C

25°C

- 40°C

10m

100µ

1m

10µ

10n

100n

1n

100p

1p

10p

100f

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MCP111/112

DS20001889F-page 10

 2004-2016 Microchip Technology Inc.

3.0

PIN DESCRIPTION

The descriptions of the pins are listed in 

Table 3-1

.

TABLE 3-1:

PIN FUNCTION TABLE

Pin Number

Symbol

Function

SOT-23-3

SC-70

SOT-89-3

T0-92

1

1

1

V

OUT

Output State
V

DD

 Falling:

H = V

DD

 > V

TRIP

L = V

DD

 < V

TRIP

V

DD

 Rising:

H = V

DD

 > V

TRIP

 + V

HYS

L = V

DD

 < V

TRIP

 + V

HYS

2

3

3

V

SS

Ground reference

3

2

2

V

DD

Positive power supply

4

V

DD

Positive power supply

Maker
Microchip Technology Inc.
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