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Sense & Control
Datasheet
Rev.1.0, 2010-09-20
TLE4966-3K
High Sensitivity Automotive Hall Switch with direction detection
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Edition 2010-09-20
Published by
Infineon Technologies AG
81726 Munich, Germany
©
2010
Infineon Technologies AG
All Rights Reserved.
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Datasheet
3
Rev.1.0, 2010-09-20
TLE4966-3K
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Last Trademarks Update 2008-11-17
Revision History: 2010-09-20, Rev.1.0
Previous Revision:
Page
Subjects (major changes since last revision)
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Datasheet
4
Rev.1.0, 2010-09-20
TLE4966-3K
Trademarks of Infineon Technologies AG . . . . . . . . . . . . . . . . . . . . . . 3
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.3
Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Electrical and Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Field Direction Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Timing Diagrams for the Speed and Direction Output . . . . . . . . . . . . . 11
7
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.1
Package Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.2
Distance between Chip and Package Surface . . . . . . . . . . . . . . . . . . . . . . 13
7.3
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
PCB Footprint for PG-TSOP-6-6-5 . . . . . . . . . . . . . . . . . . . . . . . . . . 14
![background image](/sites/default/files/pdfhtml_infineon/Infineon-TLE4966_3K-DS-v01_00-en005.png)
Product Name
Product Type
Ordering Code
Package
TLE4966-3K
Double Hall Switch
SP000835522
PG-TSOP-6-6-5
High Sensitivity Automotive Hall Switch with direction
detection
TLE4966-3K
Datasheet
5
Rev.1.0, 2010-09-20
1
Overview
1.1
Features
•
2.7V to 24V supply voltage operation
•
Operation from unregulated power supply
•
High sensitivity and high stability
of the magnetic switching points
•
High resistance to mechanical stress
by Active Error Compensation
•
Reverse battery protection (-18V)
•
Superior temperature stability
•
Peak temperatures up to 195°C
•
Low jitter (typ. 1
μs)
•
Digital output signals
•
Excellent matching of the 2 Hall probes
•
Hall plate distance 1.45mm
•
Speed and direction output signal
•
SMD package PG-TSOP-6-6-5
1.2
Functional Description
The TLE4966-3K is an integrated circuit dual Hall-effect sensor designed specifically for highly accurate
applications which use a rotating pole wheel. Precise magnetic switching points and high temperature stability are
achieved by active compensation circuits and chopper techniques on chip. The sensor provides a speed output
at Q2 with the status (high or low) corresponding to the magnetic field value. For positive magnetic fields (south
pole) exceeding the threshold B
OP
the output is low, whereas for negative magnetic fields (north pole) lower than
B
RP
the output switches to high. The output Q1 can be either high or low depending on the direction of rotation of
the pole wheel. This direction information is calculated internally.
![background image](/sites/default/files/pdfhtml_infineon/Infineon-TLE4966_3K-DS-v01_00-en006.png)
Datasheet
6
Rev.1.0, 2010-09-20
TLE4966-3K
Overview
1.3
Pin Configuration (top view)
Figure 1
Pin Definition and Center of Sensitive Area
Table 1
Pin Definitions and Functions
Pin No.
Symbol
Function
1
Q2
Speed
2
GND
Recommended connection to GND
3
Q1
Direction
4
V
DD
Supply voltage
5
GND
Recommended connection to GND
6
GND
Ground
AEA03645
66
Year (y) = 0...9
Month (m) = 1...9,
O - October
N - November
D - December
s
y
m
1
2
3
4
5
PG-TSOP6-6-5
± 0.15
0.73
± 0.15
0.8
6
1.45
Center of
Sensitive Area
speed
direction
![background image](/sites/default/files/pdfhtml_infineon/Infineon-TLE4966_3K-DS-v01_00-en007.png)
Datasheet
7
Rev.1.0, 2010-09-20
TLE4966-3K
General
2
General
2.1
Block Diagram
Figure 2
Block Diagram
2.2
Circuit Description
The chopped Dual Hall Switch comprises two Hall probes, bias generator, compensation circuits, oscillator, and
output transistors.
The bias generator provides currents for the Hall probes and the active circuits. Compensation circuits stabilize the
temperature behavior and reduce influence of technology variations.
The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall
probes caused by molding and soldering processes and other thermal stresses in the package. This chopper
technique together with the threshold generator and the comparator ensures high accurate magnetic switching
thresholds.
Voltage Regulator
(reverse polarity protected)
Oscillator
& Sequencer
Bias and
Compensation
Circuits
Filter
Filter
Amplifier
Amplifier
Direction
Detection
Chopped
Hall
Probe
ESD
V
DD
Q2
Comparator
with
Hysteresis
Q1
GND
Chopped
Hall
Probe
![background image](/sites/default/files/pdfhtml_infineon/Infineon-TLE4966_3K-DS-v01_00-en008.png)
Datasheet
8
Rev.1.0, 2010-09-20
TLE4966-3K
Maximum Ratings
2.3
Application Circuit
It is recommended to use a series resistor R
S
with 200
Ω and a capacitor of C
S
= 4.7nF for protection against
overvoltage and transients on the supply line
. Pull-up resistors R
L
are required for the output pins Q
1
and Q
2
.
C
S
Q
1
Q
2
GND
T
L
E
49
66-
3K
V
DD
R
S
R
L
R
L
V
S
Figure 3
Application Circuit
3
Maximum Ratings
Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 2
Absolute Maximum Ratings
T
j
= -40°C to 150°C
Parameter
Symbol
Limit Values
Unit
Conditions
min.
max.
Supply voltage
V
DD
V
S
V
S
-18
-18
-18
18
24
26
V
for 1 h,
R
S
≥ 200 Ω
for 5 min,
R
S
≥ 200 Ω
Supply current
through protection
device
I
DD
-50
50
mA
Output voltage
V
Q
-0.7
-0.7
18
26
V
for 5 min @ R
L
= 1.2 k
Ω (pull up resistor)
Continuous output
current
I
Q
-50
50
mA
Junction
temperature
T
j
–
–
–
–
155
165
175
195
°C
for 2000 h (not additive)
for 1000 h (not additive)
for 168 h (not additive)
for 3 x 1 h (additive)
Storage
temperature
T
S
-40
150
°C
Magnetic flux
density
B
–
unlimited mT
![background image](/sites/default/files/pdfhtml_infineon/Infineon-TLE4966_3K-DS-v01_00-en009.png)
Table 3
ESD Protection
1)
1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method
3015.7
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
ESD voltage
V
ESD
–
±4
kV
HBM
, R
= 1.5 k
Ω,
C
= 100 pF
T
A
= 25°C
Datasheet
9
Rev.1.0, 2010-09-20
TLE4966-3K
Operating Range
4
Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4966-3K.
All parameters specified in the following sections refer to theses operating conditions unless otherwise mentioned.
Table 4
Operating Range
Parameter
Symbol
Limit Values
Unit
Conditions
min.
typ.
max.
Supply voltage
V
DD
V
S
V
S
2.7
–
–
–
–
–
18
24
26
V
1 h with
R
S
≥ 200 Ω
for 5 min
R
S
≥ 200 Ω
Output voltage
V
Q
-0.7
–
18
V
Junction temperature
T
j
-40
–
–
–
150
175
°C
for 168 h
Output current
I
Q
0
–
10
mA
![background image](/sites/default/files/pdfhtml_infineon/Infineon-TLE4966_3K-DS-v01_00-en010.png)
Datasheet
10
Rev.1.0, 2010-09-20
TLE4966-3K
Electrical and Magnetic Parameters
5
Electrical and Magnetic Parameters
Product characteristics involve the spread of values guaranteed within the specified voltage and temperature
range. Typical characteristics are the median of the production and correspond to V
D
= 12V and T
A
= 25°C.
Table 5
Electrical Characteristics
1)
1) over operating range, unless otherwise specified. Typical values correspond to
V
DD
= 12 V and
T
A
= 25°C
Parameter
Symbol
Limit Values
Unit
Conditions
min.
typ.
max.
Supply current
I
DD
4
5.2
7
mA
V
DD
= 2.7 V ... 18 V
Reverse current
I
SR
0
0.2
1
mA
V
DD
= -18 V
Output saturation voltage
V
QSAT
–
0.3
0.6
V
I
Q
= 10 mA
Output leakage current
I
QLEAK
–
0.05
10
μA
for
V
Q
= 18 V
Output fall time
t
f
–
0.2
1
μs
R
L
= 1.2 k
Ω;
C
L
< 50 pF
see:
Figure 4
on
Page 11
Output rise time
t
r
–
0.2
1
μs
Chopper frequency
f
OSC
–
320
–
kHz
Switching frequency
f
SW
0
–
15
2) To operate the sensor at the max. switching frequency, the magnetic signal amplitude must be 1.4 times higher than for
static fields. This is due to the -3 dB corner frequency of the low pass filter in the signal path.
2)
kHz
Delay time
3) Systematic delay between magnetic threshold reached and output switching
3)
t
d
–
13
–
μs
Count Signal Delay
t
dc
50
200
1000
ns
see:
Figure 5
on
Page 12
Output jitter
4) Jitter is the unpredictable deviation of the output switching delay
4)
t
QJ
–
1
–
μs
RMS
Typ. value for square wave signal 1 kHz
Repeatability of magnetic
thresholds
5)
B
REP
is equivalent to the noise constant
5)
B
REP
–
40
–
μT
RMS
Typ. value for
Δ
B
/
Δ
t
> 12 mT/ms
Power-on time
6) Time from applying
V
DD
≥ 2.7 V to the sensor until the output state is valid
6)
t
PON
–
13
–
μs
V
DD
≥ 2.7 V
Distance of hall plates
d
HALL
–
1.45
–
mm
Thermal resistance
7) Thermal resistance from junction to ambient
Calculation of the ambient temperature (PG-TSOP-6-6-5 example)
e.g. for V
DD
= 12.0 V, I
DDtyp
= 5.5 mA, V
QSATtyp
= 0.3 V and 2 x I
Q
= 10 mA
:
Power Dissipation: P
DIS
= 72.0 mW.
In T
A
= T
j
– (R
thJA
× P
DIS
) = 175°C – (100 K / W
× 0.072 W)
Resulting max. ambient temperature: T
A
= 167.8°C
7)
R
thJA
–
100
–
K/W
PG-TSOP-6-6-5