Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
A customized leadframe has been incorporated into the standard
SOT-23 package to produce a HEXFET Power MOSFET with
the industry's smallest footprint. This package, dubbed the
Micro3, is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
V
DSS
= 30V
R
DS(on)
= 0.25Ω
HEXFET
®
Power MOSFET
Description
l
Generation V Technology
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
l
Lead-Free
l
RoHS Compliant, Halogen-Free
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
mW
Linear Derating Factor
mW/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy
g
mJ
dv/dt
Peak diode Recovery dv/dt
d
V/ns
T
J ,
T
STG
Junction and Storage Temperature Range
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJA
Maximum Junction-to-Ambient
f
–––
230
°C/W
3.9
A
5.0
540
4.3
±20
Max.
1.2
0.93
7.3
-55 to + 150
D
S
G
3
1
2
Micro3
™
IRLML2803PbF
Form
Quantity
IRLML2803TRPbF
Micro3™ (SOT-23)
Tape and Reel
3000
IRLML2803TRPbF
Package Type
Standard Pack
Orderable Part Number
Base Part Number
1
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2
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IRLML2803PbF
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250µA
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
0.029 V/°C Reference to 25°C, I
D
= 1mA
0.25
V
GS
= 10V, I
D
= 0.91A
0.40
V
GS
= 4.5V, I
D
= 0.46A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
0.87
S
V
DS
= 10V, I
D
= 0.46A
1.0
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
3.3
5.0
I
D
= 0.91A
Q
gs
Gate-to-Source Charge
0.48 0.72
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
1.1
1.7
V
GS
= 10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
3.9
V
DD
= 15V
t
r
Rise Time
4.0
I
D
= 0.91A
t
d(off)
Turn-Off Delay Time
9.0
R
G
= 6.2Ω
t
f
Fall Time
1.7
R
D
= 16Ω, See Fig. 10
C
iss
Input Capacitance
85
V
GS
= 0V
C
oss
Output Capacitance
34
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
15
= 1.0MHz, See Fig. 5
Ω
µA
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25°C, I
S
= 0.91A, V
GS
= 0V
t
rr
Reverse Recovery Time
26
40
ns
T
J
= 25°C, I
F
= 0.91A
Q
rr
Reverse RecoveryCharge
22
32
nC
di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
7.3
0.54
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 0.91A, di/dt ≤ 120A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Limited by T
Jmax
, starting T
J
= 25°C, L = 9.4mH, R
G
= 25
Ω, I
AS
= 0.9A.
Surface mounted on FR-4 board, t ≤ 5sec.
3
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IRLML2803PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
0.1
1
10
20μs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
DI
, D
rai
n-
to
-S
ou
rc
e
C
ur
rent
(
A
)
0.1
1
10
0.1
1
10
A
DS
V , Drain-to-Source Voltage (V)
DI , D
ra
in
-to
-S
ou
rc
e C
urr
en
t (
A
)
20μs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.0
0.5
1.0
1.5
2.0
-60 -40
-20
0
20
40
60
80
100 120 140 160
J
T , Junction Temperature (°C)
R
, D
ra
in
-to
-S
ou
rc
e O
n R
es
is
ta
nc
e
DS
(o
n)
(N
or
m
al
iz
ed)
V = 10V
GS
A
I = 0.91A
D
0.1
1
10
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I
, Dra
in
-to
-S
o
urc
e
C
urre
n
t (A)
A
V = 10V
20μs PULSE WIDTH
DS
4
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IRLML2803PbF
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
20
40
60
80
100
120
140
160
1
10
100
C
, Ca
pa
ci
ta
nc
e (
pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0.0
1.0
2.0
3.0
4.0
5.0
Q , Total Gate Charge (nC)
G
V
, G
ate
-to
-S
ou
rc
e V
ol
ta
ge
(V
)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 0.91A
V = 24V
V = 15V
D
DS
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , R
ev
ers
e D
ra
in
C
urre
nt
(A
)
SD
SD
A
0.1
1
10
100
1
10
100
V , Drain-to-Source Voltage (V)
DS
I
, D
ra
in
C
urre
nt
(A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
1ms
10ms
A
A
J
100μs
10μs
5
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IRLML2803PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μF
50K
Ω
.2
μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
al
R
esponse
(Z
)
1
th
JA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
6
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IRLML2803PbF
Fig 13.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
*
V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
V
GS
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
0
2
4
6
8
10
12
14
16
18
E
A
S
, S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
I D
TOP
0.57A
0.75A
BOTTOM
0.90A
7
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IRLML2803PbF
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
0.08
0.88
0.01
0.89
0.95 BSC
MILLIME TERS
MIN
e
E
E1
D
L
A
A1
A2
c
M
O
B
S
Y
MIN
MAX
MAX
.036
.0375 BSC
DIME NSIONS
INCHES
b
0.30
bbb
0.15
.008
ccc
.006
0.25 BS C
L1
L
0.40
0.60
.0118 BSC
aaa
0.20
.004
0°
8°
8°
0°
2.80
1.20
0
E1
E
D
5
6
3
1
2
ccc
C B A
B
5
6
e
e1
A2
A
A1
bbb
C A B
3X b
aaa C
3 S URF
0
3X L
L1
H
4
7
2.10
e1
1.90 BSC
.075 BSC
.0119
.0032
.111
.083
.048
.055
.119
.103
.0196
.0078
.0039
.044
.0004
.035
.040
.0236
.0158
1.02
0.20
0.50
2.64
3.04
1.40
1.12
0.10
0.10
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
RECOMMENDED FOOTPRINT
3X
3X
NOT ES
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
4 DAT UM PLANE H IS LOCAT ED AT T HE MOLD PART ING LINE.
5 DAT UM A AND B T O BE DET ERMINED AT DAT UM PLANE H.
6 DIMENSIONS D AND E1 ARE MEASURED AT DAT UM PLANE H.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMET ER.
7 DIMENSION L IS T HE LEAD LENGTH FOR SOLDERING T O A SUBST RAT E.
8. OUT LINE CONFORMS T O JEDEC OUT LINE T O-236AB.
F = IRLML6401
A
2001
A
27
Notes: This part marking information applies to devices produced after 02/26/2001
ASSEMBLY LOT CODE
LEAD-FREE
DATE CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
8
2008
3
2003
1
2001
YEAR
2002
2
5
2005
2004
4
2007
2006
7
6
2010
0
2009
9
YEAR
Y
C
03
WORK
WEEK
01
02
A
W
B
04
D
24
26
25
X
Z
Y
WORK
WEEK
W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009
J
Y
51
29
28
30
C
B
D
50
X
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
P = IRLML9301
R = IRLML9303
Cu WIRE
HALOGEN FREE
PART NUMBER
52
Z
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
W = IRFML8244
V = IRLML6346
U = IRLML6344
T = IRLML6246
S = IRLML6244
Y = IRLML2246
X = IRLML2244
Z = IRFML9244
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package
8
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2014 International Rectifier
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April 24, 2014
IRLML2803PbF
Tape & Reel Information
SOT-23
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 )
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package
9
www.irf.com
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2014 International Rectifier
Submit Datasheet Feedback
April 24, 2014
IRLML2803PbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit
http://www.irf.com/whoto-call/
MS L1
(per JEDEC J-S TD-020D
††
)
RoHS compliant
Yes
Qualification information
†
Qualification level
Consumer
(per JEDEC JES D47F
††
guidelines)
Moisture Sensitivity Level
Micro3
™ (SOT-23)
† Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
††
Applicable version of JEDEC standard at the time of product release
Revision History
Date
Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
• Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
4/24/2014