IRLML2502GPBF Datasheet

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Parameter

Typ.

Max.

Units

R

θJA

Maximum Junction-to-Ambient

ƒ

75

100

°C/W

IRLML2502GPbF

HEXFET

®

 Power MOSFET

These N-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely

low  on-resistance per silicon area.  This benefit, combined

with the fast switching speed and ruggedized device design

that HEXFET

®

 power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device

for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce

a HEXFET Power MOSFET with the industry's smallest

footprint.  This package, dubbed the Micro3

™, is ideal for

applications where printed circuit board space is at a

premium.  The low profile (<1.1mm) of the Micro3 allows it

to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards. The thermal

resistance and power dissipation are the best available.

Thermal Resistance

V

DSS

 = 20V

R

DS(on)

 = 0.045

Ω

l

Ultra Low On-Resistance

l

N-Channel MOSFET

SOT-23 Footprint

l

Low Profile (<1.1mm)

l

Available in Tape and Reel

l

Fast Switching

l

Lead-Free

l

Halogen-Free

Description

09/25/12

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1

Parameter

Max.

Units

V

DS

Drain- Source Voltage

20

V

I

D

 @ T

A

 = 25°C

Continuous Drain Current, V

GS

 @ 4.5V

4.2

I

D

 @ T

A

= 70°C

Continuous Drain Current, V

GS

 @ 4.5V

3.4

A

I

DM

Pulsed Drain Current 



33

P

@T

A

 = 25°C

Power  Dissipation

1.25

P

@T

A

 = 70°C

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

V

GS

Gate-to-Source Voltage

 ± 12

V

T

J, 

T

STG

Junction and Storage Temperature Range

-55  to + 150

°C

Absolute Maximum Ratings

W

Micro3

D

S

G

3

1

2

PD - 96163A

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IRLML2502GPbF

2

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

 Repetitive rating;  pulse width limited by

     max. junction temperature. ( See fig. 11 )

Notes:

‚

 Pulse width ≤ 300μs; duty cycle ≤ 2%.

ƒ

  Surface mounted on FR-4 board,  t ≤  5sec.

S

D

G

Electrical Characteristics  @ T

J

 = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage

20

–––

–––

V

ΔV

(BR)DSS

/

ΔT

Breakdown Voltage Temp. Coefficient

–––

0.01

–––

V/°C

R

DS(on)

Static Drain-to-Source On-Resistance

–––

0.035

0.045

Ω

–––

0.050

0.080

V

GS(th)

Gate Threshold Voltage

0.60

–––

1.2

V

ΔV

GS(th)

Gate Threshold Voltage Coefficient

–––

 -3.2

–––

mV/°C

gfs

Forward Transconductance

5.8

–––

–––

S

I

DSS

Drain-to-Source Leakage Current

–––

–––

1.0

–––

–––

25

I

GSS

Gate-to-Source Forward Leakage

–––

–––

100

Gate-to-Source Reverse Leakage

–––

–––

-100

Q

g

Total Gate Charge 

–––

8.0

12

Q

gs

Gate-to-Source Charge

–––

1.8

2.7

Q

gd

Gate-to-Drain ("Miller") Charge

–––

1.7

2.6

t

d(on)

Turn-On Delay Time

–––

7.5

–––

t

r

Rise Time

–––

10

–––

t

d(off)

Turn-Off Delay Time

–––

54

–––

t

f

Fall Time

–––

26

–––

C

iss

Input Capacitance

–––

740

–––

C

oss

Output Capacitance

–––

90

–––

C

rss

Reverse Transfer Capacitance

–––

66

–––

Source-Drain Rating and  Characteristics

        Parameter

Min.

Typ.

Max.

Units

I

S

Continuous Source Current 

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)c

V

SD

Diode Forward Voltage

–––

–––

1.2

V

t

rr

Reverse Recovery Time

–––

16

24

ns

Q

rr

Reverse Recovery Charge

–––

8.6

13

nC

MOSFET symbol

nA

ns

A

pF

nC

V

DS

 = 10V

V

GS

 = 12V

V

GS

 = -12V

Conditions

V

GS

 = 0V, I

D

 = 250uA

Reference to 25°C, I

D

 = 1.0mA 

V

GS

 = 4.5V, I

D

 = 4.2A d

–––

–––

33

–––

–––

1.3

Conditions

R

= 10

Ω 

d

ƒ = 1.0MHz

T

J

 = 25°C, I

F

 = 1.3A

di/dt = 100A/μs d

T

J

 = 25°C, I

S

 = 1.3A, V

GS

 = 0V d

showing  the
integral reverse

p-n junction diode.

R

= 6

Ω

V

DS

 = 10V, I

D

 = 4.0A

V

DS

 = 16V, V

GS

 = 0V, T

J

 = 70°C

μA

V

GS

 = 5.0V d

I

D

 = 1.0A

V

GS

 = 0V

V

DS

 = 15V

I

D

 = 4.0A

V

DS

 = V

GS

, I

D

 = 250μA

V

GS

 = 2.5V, I

D

 = 3.6A d

V

DS

 = 16V, V

GS

 = 0V

V

DD

 = 10V

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3

Fig 4.  Normalized On-Resistance

Vs. Temperature

Fig 2.  Typical Output Characteristics

Fig 1.  Typical Output Characteristics

Fig 3.  Typical Transfer Characteristics

-60 -40 -20

0

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T  , Junction Temperature (  C)

R            , Drain-to-Source On Resistance

(Normalized)

J

D

S

(on)

°

V

=

I =

GS

D

4.5V

4.0A

 1

 10

 100

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 25 C

J

°

TOP

BOTTOM

VGS

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

2.25V

V     , Drain-to-Source Voltage (V)

I   ,  D

rain-to-S

ource C

urrent (A

)

DS

D

2.25V

 1

 10

 100

0.1

 1

 10

 100

20μs PULSE WIDTH

T  = 150 C

J

°

TOP

BOTTOM

VGS

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

2.25V

V     , Drain-to-Source Voltage (V)

I   ,  D

rain-to-S

ource C

urrent (A

)

DS

D

2.25V

 10

 100

2.0

2.4

2.8

3.2

3.6

4.0

V      = 15V
20μs PULSE WIDTH

DS

V     , Gate-to-Source Voltage (V)

I   ,  D

rain-to-S

ource C

urrent (A

)

GS

D

T  = 25  C

J

°

T  = 150  C

J

°

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4

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Fig 8.  Maximum Safe Operating Area

Fig 6.  Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5.  Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7.  Typical Source-Drain Diode

Forward Voltage

0

4

8

12

16

0

2

4

6

8

10

Q   , Total Gate Charge (nC)

V     , Gate-to-Source Voltage (V)

G

GS

I =

D

4.0A

V

= 10V

DS

0.1

 1

 10

 100

0.4

0.6

0.8

1.0

1.2

1.4

V     ,Source-to-Drain Voltage (V)

I     , Reverse Drain Current (A)

SD

SD

V      = 0 V 

GS

T  = 25  C

J

°

T  = 150  C

J

°

0.1

 1

 10

 100

 1000

0.1

 1

 10

 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

 Single Pulse

 T

 T

= 150  C

= 25  C

°

°

J

A

V     , Drain-to-Source Voltage (V)

I   , Drain Current (A)I   , Drain Current (A)

DS

D

10us

100us

1ms

10ms

 1

 10

 100

0

200

400

600

800

1000

1200

V     , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C      SHORTED

GS
iss

gs

gd ,

ds

rss

gd

oss

ds

gd

C

rss

C

oss

C

iss

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5

Fig 10.  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9.  Maximum Drain Current Vs.

Case Temperature

25

50

75

100

125

150

0.0

1.0

2.0

3.0

4.0

T   , Case Temperature (  C)

I   , Drain Current (A)

°

C

D

0.1

 1

 10

 100

 1000

0.00001

0.0001

0.001

0.01

0.1

 1

 10

Notes:

1. Duty factor D = t   / t
2. Peak T = P

x  Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t  , Rectangular Pulse Duration (sec)

Ther

m

al

 R

esponse

(Z

        )

1

th

JA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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6

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Fig 12.   On-Resistance Vs. Drain Current

Fig 11.   On-Resistance Vs. Gate Voltage

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

VGS, Gate -to -Source Voltage  ( V )

0.02

0.03

0.04

0.05

R

D

S

(o

n)

 ,

  D

ra

in

-t

-S

ou

rc

V

ol

ta

ge

 (

 Ω

 )

Id = 4.0A

0

10

20

30

40

iD , Drain Current ( A )

0.00

0.10

0.20

0.30

R

D

S

 (

 o

, D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

( Ω

 )

VGS = 4.5V

VGS = 2.5V

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.5

0.7

0.9

1.1

1.3

V

G

S

(t

h)

,  

G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 50μA

ID = 250μA

Fig 13.   Threshold Voltage Vs. Temperature

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7

Micro3 (SOT-23/TO-236AB) Part Marking Information

Micro3 (SOT-23) Package Outline

Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

e

E1

E

D

A

B

0.15 [0.006]

e1

1

2

3

M C B A

5

6

6

5

NOTES:

b

A1

3X

A

A2

A

B

C

M

0.20 [0.008]

0.10 [0.004] C

C

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES 
  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS 
  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

0.89

1.12

SYMBOL

MAX

MIN

A1

b

0.01

0.10

c

0.30

0.50

D

0.08

0.20

E

2.80

3.04

E1

2.10

2.64

e

1.20

1.40

A

0.95

BSC

L

0.40

0.60

0

8

MILLIMETERS

A2

0.88

1.02

e1

1.90

BSC

REF

0.54

L1

BSC

0.25

L2

BSC

REF

%6&

INCHES

8

0

%6&

0.0004

MIN

MAX

DIMENSIONS

0.972

1.900

Recommended Footprint

0.802

0.950

2.742

3X L

c

L2

H 4

L1

 7

F =  IRLML6401

A

2001

A

27

Notes: This part marking information applies to devices  produced after 02/26/2001

LOT CODE

LEAD FREE

DATE CODE

E =  IRLML6402

X =  PART NUMBER CODE REFERENCE:

D =  IRLML5103

C =  IRLML6302

B =  IRLML2803

A =  IRLML2402

W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

W =  (27-52) IF PRECEDED BY A LETTER

Y

8

2008

3

2003

1

2001

YEAR

2002

2

5

2005

2004

4

2007

2006

7

6

2010

0

2009

9

YEAR

Y

C

03

WORK

WEEK

01

02

A

W

B

04

D

24

26

25

X

Z

Y

WORK

WEEK

W

H =  IRLML5203

G =  IRLML2502

K

H

G

F

E

D

C

B

2006

2003

2002

2005

2004

2008

2007

2010

2009

J

29

28

30

C

B

D

50

X

I  =  IRLML0030
J =  IRLML2030

L =  IRLML0060
M =  IRLML0040

K =  IRLML0100

N =  IRLML2060
P =  IRLML9301
R =  IRLML9303

Cu WIRE

HALOGEN FREE

PART NUMBER

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Data and specifications subject to change without notice.

Micro3™ Tape & Reel Information

Dimensions  are  shown  in  millimeters  (inches)

2.05 ( .080 )
1.95 ( .077 )

TR

FEED DIRECTION

4.1 ( .161 )
3.9 ( .154 )

1.6 ( .062 )
1.5 ( .060 )

1.85 ( .072 )
1.65 ( .065 )

3.55 ( .139 )
3.45 ( .136 )

1.1 ( .043 )
0.9 ( .036 )

4.1 ( .161 )
3.9 ( .154 )

0.35 ( .013 )
0.25 ( .010 )

8.3 ( .326 )
7.9 ( .312 )

1.32 ( .051 )
1.12 ( .045 )

9.90 ( .390 )
8.40 ( .331 )

  178.00
( 7.008 )
    MAX.

NOTES:
1.  CONTROLLING DIMENSION : MILLIMETER.
2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.
     

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/2012

Maker
Infineon Technologies
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