![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf001.png)
Base part number
Package Type
Standard Pack
Orderable Part Number
Form Quantity
IRG7P4263PbF TO-247AC Tube
25
IRGP4263PbF
IRG7P4263-EPbF TO-247AD
Tube
25
IRGP4263-EPbF
Absolute Maximum Ratings
Parameter Max.
Units
V
CES
Collector-to-Emitter Voltage
650
V
I
C
@ T
C
= 25°C
Continuous Collector Current
90
I
C
@ T
C
= 100°C
Continuous Collector Current
60
I
CM
Pulse Collector Current, V
GE
=20V 192
I
LM
Clamped Inductive Load Current, V
GE
=20V 192
V
GE
Continuous Gate-to-Emitter Voltage
±20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
300
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
150
T
J
Operating Junction and
-40 to +175
C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
A
Thermal Resistance
Parameter Min.
Typ.
Max.
Units
R
JC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) –––
–––
0.5
°C/W
R
CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
R
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
40
–––
V
CES
= 650V
I
C
= 60A, T
C
=100°C
t
SC
5.5µs, T
J(max)
= 175°C
V
CE(ON)
typ. = 1.7V
@ I
C
= 48A
G C E
Gate Collector
Emitter
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
Features
Benefits
Low V
CE(ON)
and switching losses
High efficiency in a wide range of applications and
switching frequencies
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching
performance and higher power capability
Positive V
CE (ON)
temperature coefficient
Excellent current sharing in parallel operation
5.5µs short circuit SOA
Enables short circuit protection scheme
Lead-free, RoHS compliant
Environmentally friendly
IRGP4263PbF
IRGP4263-EPbF
Insulated Gate Bipolar Transistor
E
C
G
n-channel
IRGP4263-EPbF
TO-247AD
G
E
C
G
C
E
IRGP4263PbF
TO247AC
1
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© 2014 International Rectifier
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August 21, 2014
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IRGP4263PbF/IRGP4263-EPbF
2
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August 21, 2014
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max.
Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
650
—
—
V
V
GE
= 0V, I
C
= 100µA
V
(BR)CES
/
Temperature Coeff. of Breakdown Voltage
— 505 —
mV/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage
— 1.7 2.1 V
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
— 2.1 —
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage
5.5
—
7.7
V
V
CE
= V
GE
, I
C
= 1.4mA
V
GE(th)
/
T
J
Threshold Voltage Temperature Coeff.
—
-23
—
mV/°C V
CE
= V
GE
, I
C
= 1.4mA (25°C-175°C)
gfe Forward
Transconductance
—
31
—
S
V
CE
= 50V, I
C
= 48A, PW = 20µs
I
CES
Collector-to-Emitter Leakage Current
— 1.0 25
µA
V
GE
= 0V, V
CE
= 650V
— 700 —
V
GE
= 0V, V
CE
= 650V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current
—
—
±100
nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ.
Max Units
Conditions
Q
g
Total Gate Charge (turn-on)
—
100
150
nC
I
C
= 48A
Q
ge
Gate-to-Emitter Charge (turn-on)
—
30
50
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on)
—
40
60
V
CC
= 600V
E
on
Turn-On Switching Loss
—
1.7
2.6
mJ
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
= 10
, L = 210µH, T
J
= 25°C
Energy losses include tail & diode
reverse recovery
E
off
Turn-Off Switching Loss
1.0
1.9
E
total
Total Switching Loss
2.7
4.5
t
d(on)
Turn-On delay time
—
70
90
ns
t
r
Rise time
—
60
80
t
d(off)
Turn-Off delay time
—
140
160
t
f
Fall time
—
30
50
E
on
Turn-On Switching Loss
—
2.9
—
mJ
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
= 10
, L = 210µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
E
off
Turn-Off Switching Loss
—
1.4
—
E
total
Total Switching Loss
4.3
t
d(on)
Turn-On delay time
—
55
—
ns
t
r
Rise time
—
60
—
t
d(off)
Turn-Off delay time
—
145
—
t
f
Fall time
—
65
—
C
ies
Input Capacitance
—
3000
—
V
GE
= 0V
C
oes
Output Capacitance
—
150
—
pF V
CC
= 30V
C
res
Reverse Transfer Capacitance
—
80
—
f = 1.0Mhz
RBSOA
Reverse Bias Safe Operating Area
T
J
= 175°C, I
C
= 192A
FULL SQUARE
V
CC
= 520V, Vp ≤ 650V
Rg = 10
, V
GE
= +20V to 0V
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
T
J
= 150°C,V
CC
= 400V, Vp ≤ 650V
Rg = 10
, V
GE
= +15V to 0V
µs
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 50µH, R
G
= 10
.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf003.png)
IRGP4263PbF/IRGP4263-EPbF
3
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0.1
1
10
100
f , Frequency ( kHz )
10
30
50
70
90
110
Lo
ad
C
ur
re
nt
(
A
)
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 150W
I
Square Wave:
V
CC
Diode as specified
10
100
1000
VCE (V)
1
10
100
1000
I C
(
A
)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 5- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
1
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
0.01
0.1
1
10
100
1000
I C
,
C
ol
le
ct
or
-t
o
-E
m
itt
er
C
ur
re
nt
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY V CE(on)
100µsec
DC
Fig. 4 - Forward SOA
T
C
= 25°C, T
J
175°C, V
GE
=15V
25
50
75
100
125
150
175
TC (°C)
0
20
40
60
80
100
I C
(
A
)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
25
50
75
100
125
150
175
TC (°C)
0
50
100
150
200
250
300
350
P
to
t
(W
)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf004.png)
IRGP4263PbF/IRGP4263-EPbF
4
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0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
8
10
12
14
16
18
20
VGE (V)
0
2
4
6
8
V
C
E
(
V
)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 8 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
8
10
12
14
16
18
20
VGE (V)
0
2
4
6
8
V
C
E
(
V
)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
8
10
12
14
16
18
20
VGE (V)
0
2
4
6
8
V
C
E
(
V
)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf005.png)
IRGP4263PbF/IRGP4263-EPbF
5
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IRGP4263PbF/IRGP4263-EPbF
Fig. 16 - Typ. Switching Time vs. RG
T
J
= 175°C; L = 0.210mH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
0
20
40
60
80
100
RG (
)
1
10
100
1000
10000
S
w
ic
hi
ng
T
im
e
(n
s)
tR
tdOFF
tF
tdON
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 175°C; L = 0.210mH; V
CE
= 400V, R
G
= 10
; V
GE
= 15V
4
6
8
10
12
14
16
18
20
VGE, Gate-to-Emitter Voltage (V)
0
20
40
60
80
100
120
140
160
180
200
I C
,
C
ol
le
ct
or
-t
o-
E
m
itt
er
C
ur
re
nt
(
A
)
TJ = 25°C
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
0
10 20 30 40 50 60 70 80 90 100
IC (A)
10
100
1000
S
w
ic
hi
ng
T
im
e
(n
s)
tR
tdOFF
tF
tdON
0 10 20 30 40 50 60 70 80 90 100 110
IC (A)
0
1
2
3
4
5
6
7
8
9
10
E
ne
rg
y
(m
J)
EOFF
EON
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 0.210mH; V
CE
= 400V, R
G
= 10
; V
GE
= 15V
0
20
40
60
80
100
120
RG ()
0
1
2
3
4
5
6
7
8
E
ne
rg
y
(m
J)
EOFF
EON
8
10
12
14
16
18
VGE (V)
5
10
15
20
25
30
35
T
im
e
(µ
s)
40
80
120
160
200
240
280
C
ur
re
n
t (
A
)
Tsc
Isc
Fig. 15 - Typ. Energy Loss vs. RG
T
J
= 175°C; L = 0.210mH; V
CE
= 400V, I
CE
= 48A; VGE = 15V
Fig. 17 - V
CE
vs. Short Circuit Time
V
cc
= 400V; T
C
= 150°C
![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf006.png)
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Fig. 20 Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 19 - Typical Gate Charge vs. V
GE
I
CE
= 48A
0
100
200
300
400
500
VCE (V)
10
100
1000
10000
C
ap
ac
ita
nc
e
(p
F
)
Cies
Coes
Cres
Fig. 18 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0
20
40
60
80
100
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
, G
at
e-
to
-E
m
itt
er
V
ol
ta
ge
(
V
)
VCES = 400V
VCES = 300V
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
iRi
Ci=
iRi
C
C
4
4
R
4
R
4
Ri
(°C/W)
i (sec)
0.0839
0.00012
0.0626
0.00012
0.2091
0.00425
0.1450
0.02510
![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf007.png)
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Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
G force
C sense
100K
DUT
0.0075µF
D1
22K
E force
C force
E sense
BVCES Filter
![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf008.png)
IRGP4263PbF/IRGP4263-EPbF
8
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Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
-10
0
10
20
30
40
50
60
-100
0
100
200
300
400
500
600
-2
0
2
4
6
I
CE
(A
)
V
CE
(V
)
time(µs)
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
tf
-10
0
10
20
30
40
50
60
70
80
-100
0
100
200
300
400
500
600
700
800
-3 -2 -1 0 1 2 3 4 5 6 7
I
CE
(A
)
V
CE
(V
)
time (µs)
TEST
CURRENT
90%
I
CE
5% V
CE
10%
I
CE
tr
Eon Loss
-100
0
100
200
300
400
500
-100
0
100
200
300
400
500
-2
0
2
4
6
8
Ic
e (
A
)
Vc
e (
V
)
Time (uS)
VCE
ICE
![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf009.png)
IRGP4263PbF/IRGP4263-EPbF
9
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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free"
WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
![background image](/sites/default/files/pdfhtml_infineon/irgp4263pbf010.png)
IRGP4263PbF/IRGP4263-EPbF
10
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TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
A S S E M B L Y
Y E A R 0 = 2 0 0 0
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
L O T C O D E 5 6 5 7
W IT H A S S E M B L Y
P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
0 3 5 H
5 6 5 7
W E E K 3 5
L IN E H
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
TO-247AD Part Marking Information