IRFH4213DPbF Produact Datasheet

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

HEXFET

® 

Power MOSFET 

Base part number 

Package Type 

Standard Pack 

Orderable Part Number 

 

 

Form 

Quantity 

  

IRFH4213DPbF 

PQFN 5mm x 6 mm 

Tape and Reel 

4000 

IRFH4213DTRPbF 

V

DSS 

25 

R

DS(on) 

max 

(@ V

GS 

= 10V) 

1.35

(@ V

GS 

= 4.5V) 

1.90 

Qg

 (typical) 

25 

nC 

I

D  

(@T

C (Bottom)

 = 25°C) 

100 A 

m



 

 

PQFN 5X6 mm 

Notes  through are on page 8 

Absolute Maximum Ratings 

 

 

 

  

Parameter Max. 

Units 

V

GS 

Gate-to-Source Voltage 

 ± 20 

I

D

 @ T

A

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V 

40 

I

D

 @ T

C(Bottom)

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V  

208 

I

D

 @ T

C(Bottom)

 = 100°C 

Continuous Drain Current, V

GS

 @ 10V  

131 

I

DM 

Pulsed Drain Current  400 

P

D

 @T

A

 = 25°C 

Power Dissipation  3.6 

P

D

 @T

C(Bottom)

 = 25°C 

Power Dissipation  

96 

  

Linear Derating Factor  0.029 

W/°C 

T

J  

Operating Junction and 

-55  to + 150 

°C 

T

STG 

Storage Temperature Range 

  

I

D

 @ T

C(Bottom)

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V  

(Source Bonding Technology Limited) 

100 

Applications  


Synchronous Rectifier MOSFET for Synchronous Buck Converters 

Features 

 

Benefits 

Low R

DSon

 (<1.35m

) 

 

Lower Conduction Losses 

Low Thermal Resistance to PCB (<1.3°C/W) 

 

Enable better thermal dissipation 

Low Profile (<0.9 mm)         

results in Increased Power Density 

Industry-Standard Pinout     



Multi-Vendor Compatibility 

Compatible with Existing Surface Mount Techniques                                              

 

Easier Manufacturing 

RoHS Compliant, Halogen-Free 

 

Environmentally Friendlier 

MSL1, Industrial Qualification 

 

Increased Reliability 

Schottky Intrinsic Diode with Low Forward Voltage 

 

Lower Switching Losses 

 

Fast

IR

FET™ 

IRFH4213DPbF 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

D

S

G

Static @ T

J

 = 25°C (unless otherwise specified) 

 

 

 

 

 

  

Parameter Min. 

Typ. 

Max. 

Units 

Conditions 

BV

DSS 

Drain-to-Source Breakdown Voltage 

25 

––– 

––– 

V

GS

 = 0V, I

D

 = 1.0mA 

BV

DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

––– 

21 

–––  mV/°C  Reference to 25°C, I

D

 = 10mA  

R

DS(on) 

Static Drain-to-Source On-Resistance 

––– 

1.10 

1.35 

m

 

V

GS

 = 10V, I

D

 = 50A  

  

  

––– 1.50 1.90 

V

GS

 = 4.5V, I

D

 = 50A  

V

GS(th) 

Gate Threshold Voltage 

1.1 

1.6 

2.1 

V

DS

 = V

GS

, I

D

 = 100µA 

V

GS(th) 

Gate Threshold Voltage Coefficient 

––– 

-4.5 

–––  mV/°C   V

DS

 = V

GS

, I

D

 = 10mA 

I

DSS 

Drain-to-Source Leakage Current 

––– 

––– 

250 

µA  V

DS

 = 20V, V

GS

 = 0V 

I

GSS 

Gate-to-Source Forward Leakage 

––– 

––– 

100 

nA 

V

GS

 = 20V 

  

Gate-to-Source Reverse Leakage 

––– 

––– 

-100 

V

GS

 = -20V 

gfs Forward 

Transconductance 

340 

––– 

––– 

V

DS

 = 10V, I

D

 = 50A 

Q

Total Gate Charge  

––– 

55 

––– 

nC  V

GS

 = 10V, V

DS

 = 13V, I

D

 = 50A  

Q

Total Gate Charge  

––– 

25 

38 

 

  

Q

gs1 

Pre-Vth Gate-to-Source Charge 

––– 

9.4 

–––   

V

DS

 = 13V 

Q

gs2 

Post-Vth Gate-to-Source Charge 

––– 

4.1 

––– 

nC V

GS

 = 4.5V  

Q

gd 

Gate-to-Drain Charge 

––– 

9.4 

–––   

I

D

 = 50A 

Q

godr 

Gate Charge Overdrive 

––– 

2.1 

–––   

  

Q

sw 

Switch Charge (Q

gs2

 + Q

gd

) ––– 

13.5 

––– 

 

  

Q

oss 

Output Charge 

––– 

27 

––– 

nC  V

DS

 = 16V, V

GS

 = 0V 

R

Gate Resistance 

––– 

1.5 

––– 

 

  

t

d(on) 

Turn-On Delay Time 

––– 

14 

––– 

 

V

DD

 = 13V, V

GS

 = 4.5V 

t

Rise Time 

––– 

30 

––– 

ns I

D

 = 50A 

t

d(off) 

Turn-Off Delay Time 

––– 

18 

–––   

R

G

=2.0

 

t

Fall Time 

––– 

12 

–––   

  

C

iss 

Input Capacitance 

––– 

3520 

––– 

 

V

GS

 = 0V 

C

oss 

Output Capacitance 

––– 

1070 

––– 

pF V

DS

 = 13V 

C

rss 

Reverse Transfer Capacitance 

––– 

250 

–––   

ƒ = 1.0MHz 

Avalanche Characteristics 

 

 

 

 

 

  

Parameter  

 

Typ. 

Max. 

E

AS 

Single Pulse Avalanche Energy   

 

––– 

180 

I

AR 

Avalanche Current   

 

––– 

50 

Diode Characteristics 

 

 

 

 

 

  

        Parameter 

Min. 

Typ. 

Max.  Units 

Conditions 

I

Continuous Source Current  

––– ––– 

100 

MOSFET symbol 

  

(Body Diode) 

showing  the 

I

SM 

Pulsed Source Current 

––– ––– 400 

integral reverse 

  

(Body Diode)  

p-n junction diode. 

V

SD 

Diode Forward Voltage 

––– 

––– 

0.8 

T

J

 = 25°C, I

S

 = 50A, V

GS

 = 0V  

t

rr 

Reverse Recovery Time 

––– 

26 

37 

ns 

T

J

 = 25°C, I

F

 = 50A, V

DD

 = 13V 

Q

rr 

Reverse Recovery Charge 

––– 

35 

53 

nC  di/dt = 260A/µs   

 

 

 

  

Parameter Typ. 

Max. 

Units 

R

JC

 (Bottom)  Junction-to-Case  ––– 

1.3 

  

R

JC

 (Top) 

Junction-to-Case  ––– 

21 

°C/W 

R

JA

  

Junction-to-Ambient  ––– 

35 

  

R

JA

 (<10s) 

Junction-to-Ambient  ––– 

21 

  

Thermal Resistance  

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Fig 1.  Typical Output Characteristics 

Fig 4.  Normalized On-Resistance vs. Temperature 

Fig 5.  Typical Capacitance vs. Drain-to-Source Voltage 

Fig 6.  Typical Gate Charge vs. Gate-to-Source Voltage 

Fig 3.  Typical Transfer Characteristics 

Fig 2.  Typical Output Characteristics 

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

 60µs PULSE WIDTH

Tj = 25°C

2.5V

VGS

TOP          

10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V

BOTTOM

2.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

 60µs PULSE WIDTH

Tj = 150°C

2.5V

VGS

TOP          

10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V

BOTTOM

2.5V

1.5

2.0

2.5

3.0

3.5

4.0

4.5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o

-S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 15V
60µs PULSE WIDTH

-60 -40 -20

0

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 50A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

, C

ap

ac

ita

nc

(p

F

)

Coss

Crss

Ciss

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED
Crss    = Cgd 
Coss  = Cds + Cgd

0

10

20

30

40

50

60

70

 QG  Total Gate Charge (nC)

0

2

4

6

8

10

12

14

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 20V
VDS= 13V
VDS= 5.0V

ID= 50A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Fig 8.  Maximum Safe Operating Area  

Fig 7.  Typical Source-Drain Diode Forward Voltage 

Fig 9.  Maximum Drain Current vs. Case Temperature 

Fig 10.  Threshold Voltage Vs. Temperature 

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case  

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

25

50

75

100

125

150

 TC , Case Temperature (°C)

0

40

80

120

160

200

240

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

Limited By  Package

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

he

rma

l R

es

po

ns

Z

 th

JC

 )

 °

C

/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.1

1

10

100

VDS,  Drain-toSource Voltage (V)

0.1

1

10

100

1000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C
Tj = 150°C
Single Pulse

1msec

10msec

100µsec

DC

L

imited by 

Package

OPERATION IN THIS AREA 
LIMITED BY RDS(on)

-75

-50

-25

0

25

50

75

100 125 150

TJ , Temperature ( °C )

0.0

0.5

1.0

1.5

2.0

2.5

V

G

S

(t

h)

 G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Fig 12.  On– Resistance vs. Gate Voltage 

Fig 13.  Maximum Avalanche Energy vs. Drain Current 

Fig 14.  Typical Avalanche Current vs. Pulsewidth  

25

50

75

100

125

150

Starting TJ, Junction Temperature (°C)

0

200

400

600

800

E

A

S

, S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

                 ID

TOP  

        13A

                26A

BOTTOM 

  50A

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

0.1

1

10

100

1000

A

va

la

nc

he

 C

ur

re

nt

 (

A

)

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 



j = 25°C and 

Tstart = 125°C.

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 

Tj = 125°C and 

Tstart =25°C (Single Pulse)

0

4

8

12

16

20

VGS, Gate-to-Source Voltage (V)

0

1

2

3

4

5

6

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

)

TJ = 25°C

TJ = 125°C

ID = 50A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET

® 

Power MOSFETs 

Fig 18.  Gate Charge Test Circuit 

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 19.   Gate Charge Waveform 

Fig 17a.  Switching Time Test Circuit 

Fig 17b.  Switching Time Waveforms 

Fig 16a.  Unclamped Inductive Test Circuit 

R G

I

AS

0.01

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

tp

V

(BR)DSS

I

AS

Fig 16b.  Unclamped Inductive Waveforms 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

PQFN 5x6 Outline "B" Package Details 

XXXX

XYWWX

XXXXX

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

(“4 or 5 digits”)

MARKING CODE

(Per Marking Spec)

ASSEMBLY
SITE CODE

(Per SCOP 200-002)

DATE CODE

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

PQFN 5x6 Part Marking 

 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note 
AN-1136: 

http://www.irf.com/technical-info/appnotes/an-1136.pdf

 

For more information on package inspection techniques, please refer to application note AN-1154: 

http://www.irf.com/technical-info/appnotes/an-1154.pdf

 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

PQFN 5x6 Tape and Reel 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

Bo

W

P1

Ao

Ko

CODE

TAPE DIMENSIONS

REEL DIMENSIONS

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE 

Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness

Pitch between successive cavity centers

Overall width of the carrier tape

DESCRIPTION

Type

Package

5 X 6 PQFN

Note:  All dimension are nominal

Diameter

Reel

QTY

Width

Reel

(mm)

Ao

(mm)

Bo

(mm)

Ko

(mm)

P1

(mm)

W

Quadrant

Pin 1

(Inch)

W1

(mm)

13

4000

12.4

6.300

5.300

1.20

8.00

12

Q1

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA 

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

  

†  Qualification standards can be found at International Rectifier’s web site: 

http://www.irf.com/product-info/reliability

 

†† Applicable version of JEDEC standard at the time of product release. 

Notes:

  Repetitive rating;  pulse width limited by max. junction temperature. 

   Starting T

J

 = 25°C, L = 0.107mH, R

G

 = 50

, I

AS

 = 50A.  

 Pulse width 

 400µs; duty cycle  2%. 

   R

 is measured at T

J

 of approximately 90°C. 

   When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details:  

 

http://www.irf.com/technical-info/appnotes/an-994.pdf

 

   Calculated continuous current based on maximum allowable junction temperature. 



Current is limited to 100A by source bonding technology. 

Qualification Information

† 

 

Qualification Level  

Industrial 

 (per JEDEC JESD47F

††

 guidelines) 

 

Moisture Sensitivity Level  

PQFN 5mm x 6mm 

MSL1 

(per JEDEC J-STD-020D

††)

 

RoHS Compliant 

Yes 

Revision History  

Date Comments 

5/20/2013   

 Updated package 3D drawing, on page 1. 
 Added Continuous Drain Current limited by source bonding technology, on page 1. 
 Divided note 6 into note 6 & 7, on page 8. 

4/10/2013 

 Release of final data sheet. 

8/12/13 

 Added "FastIRFET™" above part number on page1 

3/19/2015 

 Updated package outline and tape and reel on pages 7 and 8. 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

HEXFET

® 

Power MOSFET 

Base part number 

Package Type 

Standard Pack 

Orderable Part Number 

 

 

Form 

Quantity 

  

IRFH4213DPbF 

PQFN 5mm x 6 mm 

Tape and Reel 

4000 

IRFH4213DTRPbF 

V

DSS 

25 

R

DS(on) 

max 

(@ V

GS 

= 10V) 

1.35

(@ V

GS 

= 4.5V) 

1.90 

Qg

 (typical) 

25 

nC 

I

D  

(@T

C (Bottom)

 = 25°C) 

100 A 

m



 

 

PQFN 5X6 mm 

Notes  through are on page 8 

Absolute Maximum Ratings 

 

 

 

  

Parameter Max. 

Units 

V

GS 

Gate-to-Source Voltage 

 ± 20 

I

D

 @ T

A

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V 

40 

I

D

 @ T

C(Bottom)

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V  

208 

I

D

 @ T

C(Bottom)

 = 100°C 

Continuous Drain Current, V

GS

 @ 10V  

131 

I

DM 

Pulsed Drain Current  400 

P

D

 @T

A

 = 25°C 

Power Dissipation  3.6 

P

D

 @T

C(Bottom)

 = 25°C 

Power Dissipation  

96 

  

Linear Derating Factor  0.029 

W/°C 

T

J  

Operating Junction and 

-55  to + 150 

°C 

T

STG 

Storage Temperature Range 

  

I

D

 @ T

C(Bottom)

 = 25°C 

Continuous Drain Current, V

GS

 @ 10V  

(Source Bonding Technology Limited) 

100 

Applications  


Synchronous Rectifier MOSFET for Synchronous Buck Converters 

Features 

 

Benefits 

Low R

DSon

 (<1.35m

) 

 

Lower Conduction Losses 

Low Thermal Resistance to PCB (<1.3°C/W) 

 

Enable better thermal dissipation 

Low Profile (<0.9 mm)         

results in Increased Power Density 

Industry-Standard Pinout     



Multi-Vendor Compatibility 

Compatible with Existing Surface Mount Techniques                                              

 

Easier Manufacturing 

RoHS Compliant, Halogen-Free 

 

Environmentally Friendlier 

MSL1, Industrial Qualification 

 

Increased Reliability 

Schottky Intrinsic Diode with Low Forward Voltage 

 

Lower Switching Losses 

 

Fast

IR

FET™ 

IRFH4213DPbF 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

D

S

G

Static @ T

J

 = 25°C (unless otherwise specified) 

 

 

 

 

 

  

Parameter Min. 

Typ. 

Max. 

Units 

Conditions 

BV

DSS 

Drain-to-Source Breakdown Voltage 

25 

––– 

––– 

V

GS

 = 0V, I

D

 = 1.0mA 

BV

DSS

/

T

J  

Breakdown Voltage Temp. Coefficient 

––– 

21 

–––  mV/°C  Reference to 25°C, I

D

 = 10mA  

R

DS(on) 

Static Drain-to-Source On-Resistance 

––– 

1.10 

1.35 

m

 

V

GS

 = 10V, I

D

 = 50A  

  

  

––– 1.50 1.90 

V

GS

 = 4.5V, I

D

 = 50A  

V

GS(th) 

Gate Threshold Voltage 

1.1 

1.6 

2.1 

V

DS

 = V

GS

, I

D

 = 100µA 

V

GS(th) 

Gate Threshold Voltage Coefficient 

––– 

-4.5 

–––  mV/°C   V

DS

 = V

GS

, I

D

 = 10mA 

I

DSS 

Drain-to-Source Leakage Current 

––– 

––– 

250 

µA  V

DS

 = 20V, V

GS

 = 0V 

I

GSS 

Gate-to-Source Forward Leakage 

––– 

––– 

100 

nA 

V

GS

 = 20V 

  

Gate-to-Source Reverse Leakage 

––– 

––– 

-100 

V

GS

 = -20V 

gfs Forward 

Transconductance 

340 

––– 

––– 

V

DS

 = 10V, I

D

 = 50A 

Q

Total Gate Charge  

––– 

55 

––– 

nC  V

GS

 = 10V, V

DS

 = 13V, I

D

 = 50A  

Q

Total Gate Charge  

––– 

25 

38 

 

  

Q

gs1 

Pre-Vth Gate-to-Source Charge 

––– 

9.4 

–––   

V

DS

 = 13V 

Q

gs2 

Post-Vth Gate-to-Source Charge 

––– 

4.1 

––– 

nC V

GS

 = 4.5V  

Q

gd 

Gate-to-Drain Charge 

––– 

9.4 

–––   

I

D

 = 50A 

Q

godr 

Gate Charge Overdrive 

––– 

2.1 

–––   

  

Q

sw 

Switch Charge (Q

gs2

 + Q

gd

) ––– 

13.5 

––– 

 

  

Q

oss 

Output Charge 

––– 

27 

––– 

nC  V

DS

 = 16V, V

GS

 = 0V 

R

Gate Resistance 

––– 

1.5 

––– 

 

  

t

d(on) 

Turn-On Delay Time 

––– 

14 

––– 

 

V

DD

 = 13V, V

GS

 = 4.5V 

t

Rise Time 

––– 

30 

––– 

ns I

D

 = 50A 

t

d(off) 

Turn-Off Delay Time 

––– 

18 

–––   

R

G

=2.0

 

t

Fall Time 

––– 

12 

–––   

  

C

iss 

Input Capacitance 

––– 

3520 

––– 

 

V

GS

 = 0V 

C

oss 

Output Capacitance 

––– 

1070 

––– 

pF V

DS

 = 13V 

C

rss 

Reverse Transfer Capacitance 

––– 

250 

–––   

ƒ = 1.0MHz 

Avalanche Characteristics 

 

 

 

 

 

  

Parameter  

 

Typ. 

Max. 

E

AS 

Single Pulse Avalanche Energy   

 

––– 

180 

I

AR 

Avalanche Current   

 

––– 

50 

Diode Characteristics 

 

 

 

 

 

  

        Parameter 

Min. 

Typ. 

Max.  Units 

Conditions 

I

Continuous Source Current  

––– ––– 

100 

MOSFET symbol 

  

(Body Diode) 

showing  the 

I

SM 

Pulsed Source Current 

––– ––– 400 

integral reverse 

  

(Body Diode)  

p-n junction diode. 

V

SD 

Diode Forward Voltage 

––– 

––– 

0.8 

T

J

 = 25°C, I

S

 = 50A, V

GS

 = 0V  

t

rr 

Reverse Recovery Time 

––– 

26 

37 

ns 

T

J

 = 25°C, I

F

 = 50A, V

DD

 = 13V 

Q

rr 

Reverse Recovery Charge 

––– 

35 

53 

nC  di/dt = 260A/µs   

 

 

 

  

Parameter Typ. 

Max. 

Units 

R

JC

 (Bottom)  Junction-to-Case  ––– 

1.3 

  

R

JC

 (Top) 

Junction-to-Case  ––– 

21 

°C/W 

R

JA

  

Junction-to-Ambient  ––– 

35 

  

R

JA

 (<10s) 

Junction-to-Ambient  ––– 

21 

  

Thermal Resistance  

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Fig 1.  Typical Output Characteristics 

Fig 4.  Normalized On-Resistance vs. Temperature 

Fig 5.  Typical Capacitance vs. Drain-to-Source Voltage 

Fig 6.  Typical Gate Charge vs. Gate-to-Source Voltage 

Fig 3.  Typical Transfer Characteristics 

Fig 2.  Typical Output Characteristics 

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

 60µs PULSE WIDTH

Tj = 25°C

2.5V

VGS

TOP          

10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V

BOTTOM

2.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D

, D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

 60µs PULSE WIDTH

Tj = 150°C

2.5V

VGS

TOP          

10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V

BOTTOM

2.5V

1.5

2.0

2.5

3.0

3.5

4.0

4.5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I D

, D

ra

in

-t

o

-S

ou

rc

C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VDS = 15V
60µs PULSE WIDTH

-60 -40 -20

0

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

R

D

S

(o

n)

 ,

 D

ra

in

-t

o-

S

ou

rc

O

R

es

is

ta

nc

   

   

   

   

   

   

   

 (

N

or

m

al

iz

ed

)

ID = 50A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

, C

ap

ac

ita

nc

(p

F

)

Coss

Crss

Ciss

VGS   = 0V,       f = 1 MHZ

Ciss   = Cgs + Cgd,  C ds SHORTED
Crss    = Cgd 
Coss  = Cds + Cgd

0

10

20

30

40

50

60

70

 QG  Total Gate Charge (nC)

0

2

4

6

8

10

12

14

V

G

S

, G

at

e-

to

-S

ou

rc

V

ol

ta

ge

 (

V

)

VDS= 20V
VDS= 13V
VDS= 5.0V

ID= 50A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Fig 8.  Maximum Safe Operating Area  

Fig 7.  Typical Source-Drain Diode Forward Voltage 

Fig 9.  Maximum Drain Current vs. Case Temperature 

Fig 10.  Threshold Voltage Vs. Temperature 

Fig 11.  Maximum Effective Transient Thermal Impedance, Junction-to-Case  

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I S

D

, R

ev

er

se

 D

ra

in

 C

ur

re

nt

 (

A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

25

50

75

100

125

150

 TC , Case Temperature (°C)

0

40

80

120

160

200

240

I D

,   

D

ra

in

 C

ur

re

nt

 (

A

)

Limited By  Package

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

he

rma

l R

es

po

ns

Z

 th

JC

 )

 °

C

/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.1

1

10

100

VDS,  Drain-toSource Voltage (V)

0.1

1

10

100

1000

I D

,  

D

ra

in

-t

o-

S

ou

rc

C

ur

re

nt

 (

A

)

Tc = 25°C
Tj = 150°C
Single Pulse

1msec

10msec

100µsec

DC

L

imited by 

Package

OPERATION IN THIS AREA 
LIMITED BY RDS(on)

-75

-50

-25

0

25

50

75

100 125 150

TJ , Temperature ( °C )

0.0

0.5

1.0

1.5

2.0

2.5

V

G

S

(t

h)

 G

at

th

re

sh

ol

V

ol

ta

ge

 (

V

)

ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Fig 12.  On– Resistance vs. Gate Voltage 

Fig 13.  Maximum Avalanche Energy vs. Drain Current 

Fig 14.  Typical Avalanche Current vs. Pulsewidth  

25

50

75

100

125

150

Starting TJ, Junction Temperature (°C)

0

200

400

600

800

E

A

S

, S

in

gl

P

ul

se

 A

va

la

nc

he

 E

ne

rg

(m

J)

                 ID

TOP  

        13A

                26A

BOTTOM 

  50A

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

0.1

1

10

100

1000

A

va

la

nc

he

 C

ur

re

nt

 (

A

)

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 



j = 25°C and 

Tstart = 125°C.

Allowed avalanche Current vs avalanche 
pulsewidth, tav, assuming 

Tj = 125°C and 

Tstart =25°C (Single Pulse)

0

4

8

12

16

20

VGS, Gate-to-Source Voltage (V)

0

1

2

3

4

5

6

R

D

S

(o

n)

,  

D

ra

in

-t

-S

ou

rc

O

R

es

is

ta

nc

(m

)

TJ = 25°C

TJ = 125°C

ID = 50A

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET

® 

Power MOSFETs 

Fig 18.  Gate Charge Test Circuit 

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 19.   Gate Charge Waveform 

Fig 17a.  Switching Time Test Circuit 

Fig 17b.  Switching Time Waveforms 

Fig 16a.  Unclamped Inductive Test Circuit 

R G

I

AS

0.01

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

tp

V

(BR)DSS

I

AS

Fig 16b.  Unclamped Inductive Waveforms 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

PQFN 5x6 Outline "B" Package Details 

XXXX

XYWWX

XXXXX

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

(“4 or 5 digits”)

MARKING CODE

(Per Marking Spec)

ASSEMBLY
SITE CODE

(Per SCOP 200-002)

DATE CODE

PIN 1

IDENTIFIER

LOT CODE

(Eng Mode - Min last 4 digits of EATI#)

(Prod Mode - 4 digits of SPN code)

PQFN 5x6 Part Marking 

 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note 
AN-1136: 

http://www.irf.com/technical-info/appnotes/an-1136.pdf

 

For more information on package inspection techniques, please refer to application note AN-1154: 

http://www.irf.com/technical-info/appnotes/an-1154.pdf

 

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

PQFN 5x6 Tape and Reel 

Note: For the most current drawing please refer to IR website at 

http://www.irf.com/package/

 

Bo

W

P1

Ao

Ko

CODE

TAPE DIMENSIONS

REEL DIMENSIONS

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE 

Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness

Pitch between successive cavity centers

Overall width of the carrier tape

DESCRIPTION

Type

Package

5 X 6 PQFN

Note:  All dimension are nominal

Diameter

Reel

QTY

Width

Reel

(mm)

Ao

(mm)

Bo

(mm)

Ko

(mm)

P1

(mm)

W

Quadrant

Pin 1

(Inch)

W1

(mm)

13

4000

12.4

6.300

5.300

1.20

8.00

12

Q1

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/irfh4213dpbf-html.html
background image

 

IRFH4213DPbF 

www.irf.com

        © 2015 International Rectifier  

Submit Datasheet Feedback

                         March 19, 2015 

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA 

To contact International Rectifier, please visit 

http://www.irf.com/whoto-call/

  

†  Qualification standards can be found at International Rectifier’s web site: 

http://www.irf.com/product-info/reliability

 

†† Applicable version of JEDEC standard at the time of product release. 

Notes:

  Repetitive rating;  pulse width limited by max. junction temperature. 

   Starting T

J

 = 25°C, L = 0.107mH, R

G

 = 50

, I

AS

 = 50A.  

 Pulse width 

 400µs; duty cycle  2%. 

   R

 is measured at T

J

 of approximately 90°C. 

   When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details:  

 

http://www.irf.com/technical-info/appnotes/an-994.pdf

 

   Calculated continuous current based on maximum allowable junction temperature. 



Current is limited to 100A by source bonding technology. 

Qualification Information

† 

 

Qualification Level  

Industrial 

 (per JEDEC JESD47F

††

 guidelines) 

 

Moisture Sensitivity Level  

PQFN 5mm x 6mm 

MSL1 

(per JEDEC J-STD-020D

††)

 

RoHS Compliant 

Yes 

Revision History  

Date Comments 

5/20/2013   

 Updated package 3D drawing, on page 1. 
 Added Continuous Drain Current limited by source bonding technology, on page 1. 
 Divided note 6 into note 6 & 7, on page 8. 

4/10/2013 

 Release of final data sheet. 

8/12/13 

 Added "FastIRFET™" above part number on page1 

3/19/2015 

 Updated package outline and tape and reel on pages 7 and 8. 

Maker
Infineon Technologies