BTS5210L.book

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Data Sheet

1

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

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Data Sheet

2

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

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channel 1 

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Data Sheet

3

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

Pin Definitions and Functions 

Pin

Symbol

Function

1 GND 

Ground of chip  

2 IN1 
4 IN2 

Input 1,2 activates channel 1,2 in case of logic 

high signal 

3 ST1 
5 ST2 

Diagnostic feedback 1 & 2 of channel 1,2 
open drain, low on failure 

6,12,
heat
slug 

V

bb

Positive power supply voltage. Design the 

wiring for the simultaneous max. short circuit 
currents from channel 1 to 2 and also for low 
thermal resistance 

7,9,11 NC 

Not Connected 

8 OUT2 
10 OUT1 

Output 1,2 protected high-side power output  

of channel 1 and 2. Design the wiring for the 
max. short circuit current 

Pin configuration

(top view) 

GND   1

 12 V

bb

IN1   2 

11 NC 

ST1   3 

10 OUT1 

IN2   4 

9 NC 

ST2   5 

8 OUT2 

V

bb

   6 

7  NC 

V

bb

*

* heat slug 

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background image

 

Data Sheet

4

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

Parameter Symbol 

Values 

Unit

Supply voltage (overvoltage protection see page 6) 

V

bb

 43

V

Supply voltage for full short circuit protection 
T

j,start 

= -40 ...+150°C 

V

bb

36

V

Load current (Short-circuit current, see page 6) 

I

L

 self-limited

A

Load dump protection

1

)

V

LoadDump

 = 

V

A

 + 

V

s

,

V

A

 = 13.5 V 

R

I

2

)

= 2

Ω, t

d

= 400 ms; IN = low or high,  

  each channel loaded with 

R

L

= 13.5

Ω,

V

Load dump

3

)

60

V

Operating temperature range 
Storage temperature range 

T

j

T

stg

-40 ...+150
-55 ...+150

°C

Power dissipation (DC)

4)

T

a

 = 25°C: 

  (all channels active)

T

a

 = 85°C: 

P

tot

 3,05

1,59

W

Maximal switchable inductance, single pulse 
  V

bb

= 12V,

T

j,start

= 150°C

4)

,

see diagrams on page 10

  I

L

= 2.9 A,

E

AS

 = 84 mJ, 0

Ω one 

channel: 

  I

L

= 5.7 A,

E

AS

= 168 mJ, 0

Ω 

 two parallel channels: 

Z

L

14

7.6

mH

Electrostatic discharge capability (ESD) 

IN: 

  (Human Body Model) 

ST: 

 

out to all other pins shorted: 

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 

  R=1.5k

Ω; C=100pF

V

ESD

 1.0

4.0
8.0

kV

Input voltage (DC) 

see internal circuit diagram page 9

V

IN

 

-10 ... +16

V

Current through input pin (DC) 
Pulsed current through input pin

5

)

Current through status pin (DC) 

I

IN

I

INp

I

ST

±0.3

±5.0

±5.0

mA

                                                     

1

)  Supply voltages higher than V

bb(AZ)

 require an external current limit for the GND and status pins (a 150

resistor for the GND connection is recommended. 

2)

R

I

 = internal resistance of the load dump test pulse generator 

3)

V

Load dump

 is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 

4

)  Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

2

 (one layer, 70

µm thick) copper area for Vbb

connection. PCB is vertical without blown air. See page 14 

5

)  only for testing 

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background image

 

Data Sheet

5

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

Parameter and Conditions 

Symbol 

Values 

Unit

min typ 

max

Thermal resistance 
  junction - Case

6)

 each 

channel: 

R

thjC

-- --  5

K/W

  junction – ambient

6)

@ 6 cm

2

 cooling area 

one channel active: 

 

all channels active: 

R

thja

--
--
--

--

45
40

--
--
--

Electrical Characteristics

Parameter and Conditions, 

each of the four channels

 Symbol 

Values 

Unit

at T

j

 = -40...+150°C, 

V

bb

 = 12 V unless otherwise specified

min typ 

max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT); 

IL = 2 A 

 

each channel,      

T

j

 = 25°C:

T

j

 = 150°C: 

 

two parallel channels,   

T

j

 = 25°C:

see diagram, page 11

R

ON

--
--
--

110
210

55

140
280

70

m

Nominal load current

one channel active:

two parallel channels active: 

Device on PCB

6)

,

T

a = 85°C,

T

j ≤ 150°C 

I

L(NOM)

 1.8 

3.4

2.4
3.9

--

A

Output current 

while GND disconnected or pulled up

7

)

;

Vbb = 32 V, 

V

IN = 0,

see diagram page 9

I

L(GNDhigh)

-- --  2

mA

Turn-on time

8

)

IN

 to 90% 

V

OUT

:

Turn-off time 

IN 

 to 10% 

V

OUT

:

R

L

  = 12

t

on

t

off

--
--

100
100

250
270

µs

Slew rate on

8

)  

10 to 30% 

V

OUT

,

R

L

= 12

Ω: dV/dt

on

 0.2 -- 

1.0

V/

µs

Slew rate off

8

)  

70 to 40% 

V

OUT

,

R

L

= 12

Ω: -dV/dt

off

 0.2  -- 

1.1

V/

µs

                                                     

6

)  Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

2

 (one layer, 70

µm thick) copper area for Vbb

connection. PCB is vertical without blown air. See page 14 

7

)   not subject to production test, specified by design 

8

)  See timing diagram on page 12. 

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background image

 

Data Sheet

6

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

Parameter and Conditions, 

each of the four channels

 

Symbol 

Values 

Unit

at T

j

 = -40...+150°C, 

V

bb

 = 12 V unless otherwise specified

min typ 

max

Operating Parameters

Operating voltage 

 

V

bb(on)

 5.5 

-- 

40

V

Undervoltage switch off

9

)

T

j

 =-40°C...25°C

:

V

bb(u so)

 -- 

-- 

4.5

V

T

j

 =125°C:   

-- 

--  4.5

10)

Overvoltage protection

11

)

I

bb

= 40 mA 

 

V

bb(AZ)

 41 

47

52

V

Standby current

12

)

T

j

 =-40°C...25°C

:

  V

IN

= 0;

see diagram page 11

 

T

j

 =150°C: 

I

bb(off)

 -- 

--

4.5

--

8

12

µA

T

j

 =125°C:   

-- 

-- 

8

10)

Off-State output current (included in 

I

bb(off)

)

V

IN

= 0; each channel

I

L(off)

-- 1 5

µA

Operating current 

13)

,

V

IN

= 5V,

one channel on:

  all channels on:

I

GND

--
--

0.5
1.0

0.9
1.7

mA

Protection Functions

14)

Current limit,

 Vout = 0V

,

 (see timing diagrams, page 12)

 

 

 

 

T

j

 =-40°C:

T

j

 =25°C:

T

j

 =+150°C: 

I

L(lim)

 -- 

--

5

--

9

--

14

--
--

A

Repetitive short circuit current limit, 

 

 

 

T

j

 = 

T

jt

   

each channel

 two 

channels

  (see timing diagrams, page 12)

I

L(SCr)

 -- 

--

6.5
6.5

--
--

A

Initial short circuit shutdown time 

T

j,start

 =25°C:

Vout = 0V

  (see timing diagrams on page 12)

t

off(SC)

 -- 

--

ms

Output clamp (inductive load switch off)

15)

at VON(CL) = Vbb - VOUT

,

IL= 40 mA

V

ON(CL)

41

47 52

V

Thermal overload trip temperature 

T

jt

 

150 -- --

°C

Thermal hysteresis 

∆T

jt

-- 10  --

K

                                                     

9)

is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage 
falling below the lower limit of Vbb(on) 

10

   not subject to production test, specified by design 

11

) Supply voltages higher than V

bb(AZ)

 require an external current limit for the GND and status pins (a 150

resistor for the GND connection is recommended). See also 

V

ON(CL)

 in table of protection functions and 

circuit diagram on page 9.  

12

)  Measured with load; for the whole device; all channels off 

13

) Add I

ST

, if 

I

ST

 > 0 

14

)  Integrated protection functions are designed to prevent IC destruction under fault conditions described in the 

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not 
designed for continuous repetitive operation. 

15

) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest 

V

ON(CL)

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background image

 

Data Sheet

7

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

Parameter and Conditions, 

each of the four channels

 Symbol 

Values 

Unit

at T

j

 = -40...+150°C, 

V

bb

 = 12 V unless otherwise specified

min typ 

max

Reverse Battery 

Reverse battery voltage 

16

-

V

bb

 -- 

-- 

32

V

Drain-source diode voltage 

(V

out

> V

bb

)

I

L

= - 2.0 A,

T

j

= +150°C

-

V

ON

 -- 

600 

--

mV

Diagnostic Characteristics 

Open load detection voltage 

V

 OUT(OL)

1

1.7 2.8 4.0

V

Input and Status Feedback

17

)

 

 

 

Input resistance

(see circuit page 9)

R

I

2.5

4.0 6.0

k

Input turn-on threshold voltage     

V

IN(T+)

-- -- 

2.5

V

Input turn-off threshold voltage       

V

IN(T-)

1.0 -- --

V

Input threshold hysteresis 

V

IN(T)

-- 0.2  --

V

 

Status change after positive input slope

18)

with open load 

t

d(STon)

 

-- 10 20

—s

Status change after positive input slope

18)

with overload 

t

d(STon)

 

30 -- --

—s

Status change after negative input slope 

 

with open load 

t

d(SToff)

 -- 

-- 

500

—s

Status change after negative input slope

18)

with overtemperature 

t

d(SToff)

 -- 

-- 

20

—s

Off state input current 

 

V

IN

 = 0.4 V: 

I

IN(off)

5

-- 20

µA 

On state input current 

 

V

IN

 = 5 V: 

I

IN(on)

 

10 35 60

µA

Status output (open drain)

 

 

 

Zener limit voltage

I

ST

 = +1.6 mA: 

ST low voltage

I

ST

 = +1.6 mA: 

V

ST(high)

V

ST(low)

5.4

--

--
--

--

0.6

V

                                                     

16

)  Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source 

diode has to be limited by the connected load. Power dissipation is higher compared to normal operating 
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active 
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and 
circuit page 9). 

17

) If ground resistors R

GND

 are used, add the voltage drop across these resistors. 

18

) not subject to protection test, specified by design

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background image

 

Data Sheet

8

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

Truth Table 

( each channel ) 

IN

OUT

ST

Normal operation

L

H

L

H

H
H

Open load

L

H

Z

H

L

19

)

H

Overtemperature

L

H

L
L

H

L

L = "Low" Level 

X = don't care 

Z = high impedance, potential depends on external circuit 

H = "High" Level 

Status signal valid after the time delay shown in the timing diagrams 

Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth 
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired 
OR' function with a single pull-up resistor.

Terms

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67

Leadframe (V

bb

) is connected to pin 6,12 

External R

GND

 optional; single resistor R

GND

= 150

Ω  for reverse battery protection up to the max. 

operating voltage. 

                                                     

19

) L, if potential at the Output exceeds the OpenLoad detection voltage 

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background image

 

Data Sheet

9

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

Input circuit (ESD protection),

  IN1 or IN2 

,1

*1'

,

5

(6'='

,,

,

The use of ESD zener diodes as voltage clamp at DC 
conditions is not recommended.

Status output,

  ST1 or ST2 

67

*1'

(6'

='

9

5

6721

ESD-Zener diode: 6.1 V typ., max 0.3 mA; R

ST(ON)

 < 375 

at 1.6 mA. The use of ESD zener diodes as voltage clamp at 
DC conditions is not recommended.

Inductive and overvoltage output clamp,

OUT1 or OUT2 

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9

21

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V

ON

 clamped to 

V

ON(CL)

= 47 V typ.

Overvolt. and reverse batt. protection 

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V

Z1

 = 6.1 V typ., 

V

Z2

 = 47 V typ.,  

R

GND

 = 150 

Ω,

R

ST

= 15 k

Ω, R

I

= 3.5 k

Ω typ. 

In case of reverse battery the load current has to be 
limited by the load. Temperature protection is not 
active 

Open-load detection,

 OUT1 or OUT2 

OFF-state diagnostic condition: 

Open Load, if 

V

OUT

 > 3 V typ.; IN low 

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Any kind of load. In case of IN = high is 

V

OUT

≈ V

IN

-

V

IN(T+)

.

Due to V

GND

> 0, no V

ST

 = low signal available.

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background image

 

Data Sheet

10

V1.1, 2007-05-29

 

 

Smart High-Side Power Switch

BTS5210L

GND disconnect with GND pull up 

352)(7

9

,1

67

287

*1'

EE

9EE

9*1'

9,1 967

Any kind of load. If V

GND

 > 

V

IN

-

V

IN(T+)

 device stays off 

Due to V

GND

 > 0, no V

ST

 = low signal available.

V

bb

 disconnect with energized inductive 

load

352)(7

9

,1

67

287

*1'

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For inductive load currents up to the limits defined by Z

L

(max. ratings and diagram on page 10) each switch is 
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current 
flows through the GND connection. 

Inductive load switch-off energy 
dissipation

352)(7

9

,1

67

287

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5

(/RD

5/

/

^

/

=

Energy stored in load inductance: 

E

L

 = 

1/2

·

L

·

I

2
L

While demagnetizing load inductance, the energy 
dissipated in PROFET is 

E

AS

= E

bb

 + E

L

 - E

R

=

 

 V

ON(CL)

·

i

L

(t) dt,  

with an approximate solution for RL > 0 Ω:

E

AS

=

I

L

·

L

2

·

R

L

(

V

bb

+ |V

OUT(CL)

|)  

OQ

(1+ 

I

L

·

R

L

|V

OUT(CL)

|

 )   

Maximum allowable load inductance for
a single switch off 

(one channel)

4)

/ I,/Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω

ZL [mH] 

 

 

IL  [A]

Maker
Infineon Technologies
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