Datasheet
1
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Product Summary
Drain source voltage
V
DS
42
V
On-state resistance
R
DS(on)
200
m
W
Nominal load current
I
D(Nom)
1.3
A
Clamping energy
E
AS
150
mJ
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded
protection functions.
Logic
Channel 1
M
V
bb
In1
Source1
Drain1
HITFET
â
Pin 2
Pin 7and 8
Logic
Channel 2
In2
Source2
Pin 4
Drain2
Pin 1
Pin 5and 6
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Datasheet
2
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Pin Description
Pin Configuration (Top view)
Pin
Symbol
Function
1
S1
Source Channel 1
2
IN1
Input Channel 1
3
S2
Source Channel 2
4
IN2
Input Channel 2
5
D2
Drain Channel 2
6
D2
Drain Channel 2
7
D1
Drain Channel 1
8
D1
Drain Channel 1
S1
1
·
8
D1
IN1
2
7
D1
S2
3
6
D2
IN2
4
5
D2
PG- DSO-8-25
Gate-Driving Unit
ESD
Overload
Protection
Over- temperature
Protection
Short circuit Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In1
Source1
Drain1
HITFET
â
Pin 2
Pin 1
Gate-Driving Unit
ESD
Overload
Protection
Over- temperature
Protection
Short circuit Protection
Overvoltage-
Protection
Current
Limitation
In2
Pin 4
Source2
Drain2
Pin 3
M
Vbb
Pin 5, 6
Pin 7, 8
Datasheet
3
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Drain source voltage
V
DS
42
V
Drain source voltage for short circuit protection
1)
T
j
= -40...150 °C
V
DS(SC)
18
Continuous input current
1)
-0.2V
£ V
IN
£ 10V
V
IN
< -0.2V or
V
IN
> 10V
I
IN
no limit
|
I
IN
|
£ 2
mA
Operating temperature
T
j
-40 ...+150
°C
Storage temperature
T
stg
-55 ... +150
Power dissipation
2)
5)
T
A
= 85 °C
P
tot
0.8
W
Unclamped single pulse inductive energy
1)
each channel
E
AS
150
mJ
Load dump protection
V
LoadDump
1)3)
=
V
A
+
V
S
V
IN
= 0 and 10 V, t
d
= 400 ms,
R
I
= 2
W,
R
L
= 9
W, V
A
= 13.5 V
V
LD
50
V
Electrostatic discharge voltage
1)
(Human Body Model)
according to Jedec norm
EIA/JESD22-A114-B, Section 4
V
ESD
2
kV
Thermal resistance
junction - ambient: per channel
@ 6 cm
2
cooling area
2)
one channel on
both channels on
R
thJA
100
160
K/W
1not subject to production test, specified by design
2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5 not subject to production test, calculated by RTHJA and Rds(on)
Datasheet
4
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Electrical Characteristics
Parameter
Symbol
Values
Unit
at
T
j
= 25°C, unless otherwise specified
min.
typ.
max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150,
I
D
= 10 mA
V
DS(AZ)
42
-
55
V
Off-state drain current
T
j
= -40 ... +150°C
V
DS
= 32 V,
V
IN
= 0 V
I
DSS
-
1.5
10
µA
Input threshold voltage
I
D
= 0.
3 mA, T
j
= 25 °C
I
D
= 0.
3 mA, T
j
= 150 °C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current
I
IN(on)
-
10
30
µA
On-state resistance
V
IN
= 5 V,
I
D
= 1.4 A,
T
j
= 25 °C
V
IN
= 5 V,
I
D
= 1.4 A,
T
j
= 150 °C
R
DS(on)
-
-
190
350
240
480
m
W
On-state resistance
V
IN
= 10 V,
I
D
= 1.4 A,
T
j
= 25 °C
V
IN
= 10 V,
I
D
= 1.4 A,
T
j
= 150 °C
R
DS(on)
-
-
150
280
200
400
Nominal load current per channel
5)
V
DS
= 0.5 V,
T
j
< 150°C,
V
IN
= 10 V,
T
A
= 85 °C,
one channel on
both channels on
I
D(Nom)
1.3
1
1.65
1.3
-
-
A
Current limit (active if
V
DS
>2.5 V)
2)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 200 µs
I
D(lim)
5
7.5
10
1not subject to production test, specified by design
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on cond
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5 not subject to production test, calculated by RTHJA and Rds(on)
Datasheet
5
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Electrical Characteristics
Parameter
Symbol
Values
Unit
at
T
j
= 25°C, unless otherwise specified
min.
typ.
max.
Dynamic Characteristics
Turn-on time
V
IN
to 90%
I
D
:
R
L
= 4.7
W, V
IN
= 0 to 10 V,
V
bb
= 12 V
t
on
-
45
100
µs
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 4.7
W, V
IN
= 10 to 0 V,
V
bb
= 12 V
t
off
-
60
100
Slew rate on 70 to 50%
V
bb
:
R
L
= 4.7
W, V
IN
= 0 to 10 V,
V
bb
= 12 V
-dV
DS
/dt
on
-
0.4
1.5
V/µs
Slew rate off 50 to 70%
V
bb
:
R
L
= 4.7
W, V
IN
= 10 to 0 V,
V
bb
= 12 V
dV
DS
/dt
off
-
0.6
1.5
Protection Functions
1)
Thermal overload trip temperature
T
jt
150
175
-
°C
Thermal hysteresis
2)
DT
jt
-
10
-
K
Input current protection mode
I
IN(Prot)
25
50
300
µA
Input current protection mode
T
j
= 150 °C
I
IN(Prot)
-
40
300
Unclamped single pulse inductive energy
2)
each channel
I
D
= 0.9 A,
T
j
= 25 °C,
V
bb
= 12 V
E
AS
150
-
-
mJ
Inverse Diode
Inverse diode forward voltage
I
F
= 7 A,
t
m
= 250 µs,
V
IN
= 0 V,
t
P
= 300 µs
V
SD
-
1
-
V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Datasheet
6
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN
D
VIN
ID
VDS
IIN
S
Vbb
RL
HITFET
V
Z
D
S
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Source/
Ground
Input
V
IN
I
IN
I
DS
T
j
Datasheet
7
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
1 Overall maximum allowable power
dissipation; P
tot
= f(T
S
) resp.
P
tot
= f(T
A
) @ R
thJA
=80 K/W
-50
-25
0
25
50
75
100
°C
150
T
j
0
0.5
1
1.5
2
W
3
P
tot
T
S
T
A
2 On-state resistance
R
ON
= f(T
j
); I
D
=1.4A; V
IN
=10V
-50
-25
0
25
50
75
100
125
°C
175
T
j
0
50
100
150
200
250
300
350
400
m
W
500
R
DS(on)
typ.
max.
3 On-state resistance
R
ON
= f(T
j
); I
D
= 1.4A; V
IN
=5V
-50
-25
0
25
50
75
100
125
°C
175
T
j
0
50
100
150
200
250
300
350
400
m
W
500
R
DS(on)
typ.
max.
4 Typ. input threshold voltage
V
IN(th)
= f(T
j
);
I
D
= 0.15 mA; V
DS
= 12V
-50
-25
0
25
50
75
100
°C
150
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
V
GS(th)
Datasheet
8
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
5 Typ. transfer characteristics
I
D
=f(V
IN
); V
DS
=12V; T
Jstart
=25°C
0
1
2
3
4
5
6
7
8
V
10
V
IN
0
1
2
3
4
5
6
A
8
I
D
6 Typ. short circuit current
I
D(lim)
= f(T
j
); V
DS
=12V
Parameter: V
IN
-50
-25
0
25
50
75
100
125
°C
175
T
j
0
1
2
3
4
5
6
7
8
A
10
I
D(lim)
5V
Vin=10V
7 Typ. output characteristics
I
D
=f(V
DS
); T
Jstart
=25°C
Parameter: V
IN
0
1
2
3
4
V
6
V
DS
0
1
2
3
4
5
6
7
8
A
10
I
D
3V
4V
5V
6V
7V
Vin=10V
8 Typ. off-state drain current
I
DSS
= f(
T
j
)
-50
-25
0
25
50
75
100
125
°C
175
T
j
0
1
2
3
4
5
6
7
8
9
µA
11
I
DSS
typ.
max.
Datasheet
9
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
9 Typ. overload current
I
D(lim)
= f(
t), V
bb
=12 V, no heatsink
Parameter:
T
jstart
0
0.5
1
1.5
2
2.5
3
ms
4
t
0
2
4
6
8
A
12
I
D(lim)
-40°C
25°C
85°C
150°C
10 Typ. transient thermal impedance
Z
thJA
=f(
t
p
) @ 6 cm
2
cooling area
Parameter:
D=t
p
/
T ; one channel on
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
P
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0
11 Determination of
I
D(lim)
I
D(lim)
= f(
t); t
m
= 200µs
Parameter:
T
Jstart
0
0.1
0.2
0.3
0.4
ms
0.55
t
0
2
4
6
8
A
12
I
D(lim)
-40°C
25°C
85°C
150°C
12 Typ. transient thermal impedance
Z
thJA
=f(
t
p
) @ 6 cm
2
cooling area
Parameter:
D=t
p
/
T ; both channels on
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
P
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
Z
thJA
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0
Datasheet
10
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Package Outlines
1
Package Outlines
Figure 1
PG-DSO8-25 (Plastic Green Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
+0.06
0.19
0.35 x 45˚
1)
-0.2
4
C
8 MAX.
0.64
±0.2
6
±0.25
0.2
8x
M
C
1.27
+0.1
0.41
0.2
M
A
-0.06
1.75 MAX.
(1.45)
±0.07
0.175
B
8x
B
2)
Index Marking
5
-0.2
1)
4
1
8
5
A
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
GPS01181
0.1
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages
.
Dimensions in mm