BTS3410G Green Datasheet

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Datasheet

1

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

Product Summary

Drain source voltage

V

DS

42

V

On-state resistance 

R

DS(on)

200

m

W

Nominal load current

I

D(Nom)

1.3

A

Clamping energy

E

AS

150

mJ

Application

· All kinds of resistive, inductive and capacitive loads in switching
   or linear applications
· µC compatible power switch for 12 V DC applications

· Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded
protection functions.

Logic

Channel 1

M

V

bb

In1

Source1

Drain1

HITFET

â

Pin 2

Pin 7and 8

Logic

Channel 2

In2

Source2

Pin 4

Drain2

Pin 1

Pin 5and 6

Pin 3

Complete product spectrum and additional information http://www.infineon.com/hitfet

Features

· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible

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Datasheet

2

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

Pin Description

Pin Configuration (Top view)

Pin

Symbol

Function

1

S1

Source Channel 1

2

IN1

Input Channel 1

3

S2

Source Channel 2

4

IN2

Input Channel 2

5

D2

Drain Channel 2

6

D2

Drain Channel 2

7

D1

Drain Channel 1

8

D1

Drain Channel 1

  S1

1

·

8

D1

  IN1

2

7

D1

S2

3

6

D2

IN2

4

5

  D2

PG- DSO-8-25

Gate-Driving Unit

ESD

Overload
Protection

Over- temperature
Protection

Short circuit Protection

Overvoltage-
Protection

Current
Limitation

M

Vbb

In1

Source1

Drain1

HITFET

â

Pin 2

Pin 1

Gate-Driving Unit

ESD

Overload
Protection

Over- temperature
Protection

Short circuit Protection

Overvoltage-
Protection

Current
Limitation

In2

Pin 4

Source2

Drain2

Pin 3

M

Vbb

Pin 5, 6

Pin 7, 8

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Datasheet

3

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

Maximum Ratings at T

j

 = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Drain source voltage

V

DS

42

V

Drain source voltage for short circuit protection

1)

T

j

 = -40...150 °C

V

DS(SC)

18

Continuous input current

1)

-0.2V

£ V

IN

£ 10V

V

IN

 < -0.2V or 

V

IN

 > 10V

I

IN

no limit 

|

I

IN

 | 

£ 2 

mA

Operating temperature

T

j

-40 ...+150

°C

Storage temperature

T

stg

-55 ... +150

Power dissipation

2)

5)

T

A

 = 85 °C

P

tot

0.8

W

Unclamped single pulse inductive energy

1)

each channel

E

AS

150

mJ

Load dump protection 

V

LoadDump

1)3)

 = 

V

A

 + 

V

S

V

IN

 = 0 and 10 V, t

d

 = 400 ms, 

R

I

 = 2 

W,

R

L

 = 9 

W, V

A

 = 13.5 V

V

LD

50

V

Electrostatic discharge voltage

1)

(Human Body Model)

according to Jedec norm

EIA/JESD22-A114-B, Section 4

V

ESD

2

kV

Thermal resistance

junction - ambient:    per channel 

@ 6 cm

2

 cooling area

2)

              one channel on 

                                                 both channels on

R

thJA

100

160

K/W

1not subject to production test, specified by design
2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
 connection. PCB mounted vertical without blown air.

3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5 not subject to production test, calculated by RTHJA and Rds(on)

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Datasheet

4

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

Electrical Characteristics

Parameter

Symbol

Values

Unit

at

T

j

 = 25°C, unless otherwise specified

min.

typ.

max.

Characteristics

Drain source clamp voltage 
T

j

= - 40 ...+ 150, 

I

D

 = 10 mA

V

DS(AZ)

42

-

55

V

Off-state drain current

T

j

 = -40 ... +150°C 

V

DS

 = 32 V, 

V

IN

 = 0 V

I

DSS

-

1.5

10

µA

Input threshold voltage 
I

D

= 0.

3 mA, T

j

= 25 °C 

I

D

= 0.

3 mA, T

j

= 150 °C

V

IN(th)

1.3

0.8

1.7

-

2.2

-

V

On state input current

I

IN(on)

-

10

30

µA

On-state resistance
V

IN

 = 5 V, 

I

D

 = 1.4 A, 

T

j

 = 25 °C 

V

IN

 = 5 V, 

I

D

 = 1.4 A, 

T

j

 = 150 °C

R

DS(on)

-

-

190

350

240

480

m

W

On-state resistance 
V

IN

 = 10 V, 

I

D

 = 1.4 A, 

T

j

 = 25 °C 

V

IN

 = 10 V, 

I

D

 = 1.4 A, 

T

j

 = 150 °C

R

DS(on)

-

-

150

280

200

400

Nominal load current per channel

5)

V

DS

 = 0.5 V, 

T

j

 < 150°C, 

V

IN

 = 10 V, 

T

A

 = 85 °C,

one channel on 

both channels on 

I

D(Nom)

1.3

1

1.65

1.3

-

-

A

Current limit (active if 

V

DS

>2.5 V)

2)

V

IN

 = 10 V, 

V

DS

 = 12 V, 

t

m

 = 200 µs

I

D(lim)

5

7.5

10

1not subject to production test, specified by design
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on cond
and a short circuit occurs, these values  might be exceeded for max. 50 µs.

5 not subject to production test, calculated by RTHJA and Rds(on)

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Datasheet

5

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

Electrical Characteristics

Parameter

Symbol

Values

Unit

at

T

j

 = 25°C, unless otherwise specified

min.

typ.

max.

Dynamic Characteristics

Turn-on time       

V

IN

 to 90% 

I

D

:

R

L

 = 4.7 

W, V

IN

 = 0 to 10 V, 

V

bb

 = 12 V

t

on

-

45

100

µs

Turn-off time       

V

IN

 to 10% 

I

D

:

R

L

 = 4.7 

W, V

IN

 = 10 to 0 V, 

V

bb

 = 12 V

t

off

-

60

100

Slew rate on         70 to 50% 

V

bb

:

R

L

 = 4.7 

W, V

IN

 = 0 to 10 V, 

V

bb

 = 12 V

-dV

DS

/dt

on

-

0.4

1.5

V/µs

Slew rate off         50 to 70% 

V

bb

:

R

L

 = 4.7 

W, V

IN

 = 10 to 0 V, 

V

bb

 = 12 V

dV

DS

/dt

off

-

0.6

1.5

Protection Functions

1)

Thermal overload trip temperature

T

jt

150

175

-

°C

Thermal hysteresis

2)

DT

jt

-

10

-

K

Input current protection mode

I

IN(Prot)

25

50

300

µA

Input current protection mode
T

j

 = 150 °C

I

IN(Prot)

-

40

300

Unclamped single pulse inductive energy

2)

each channel 
I

D

 = 0.9 A, 

T

j

 = 25 °C, 

V

bb

 = 12 V

E

AS

150

-

-

mJ

Inverse Diode

Inverse diode forward voltage 
I

F

 = 7 A, 

t

m

 = 250 µs, 

V

IN

 = 0 V,

t

P

 = 300 µs

V

SD

-

1

-

V

1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design

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Datasheet

6

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

Block diagram

Inductive and overvoltage 
output clamp

Terms

HITFET

IN

D

VIN

ID

VDS

IIN

S

Vbb

RL

HITFET

V

Z

D

S

Short circuit behaviour

Input circuit (ESD protection)

Gate Drive

Source/
Ground

Input

V

IN

I

IN

I

DS

T

j

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Datasheet

7

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

1 Overall maximum allowable power

dissipation;  P

tot

 = f(T

S

)  resp. 

                      P

tot

 = f(T

A

) @ R

thJA

=80 K/W

-50

-25

0

25

50

75

100

°C

150

T

j

0

0.5

1

1.5

2

W

3

P

tot

T

S

T

A

2 On-state resistance

R

ON

 = f(T

j

); I

D

=1.4A; V

IN

=10V

-50

-25

0

25

50

75

100

125

°C

175

T

j

0

50

100

150

200

250

300

350

400

m

W

500

R

DS(on)

typ.

max.

3 On-state resistance

R

ON

 = f(T

j

); I

D

= 1.4A; V

IN

=5V

-50

-25

0

25

50

75

100

125

°C

175

T

j

0

50

100

150

200

250

300

350

400

m

W

500

R

DS(on)

typ.

max.

4 Typ. input threshold voltage

V

IN(th)

 = f(T

j

);

I

D

 = 0.15 mA; V

DS

= 12V

-50

-25

0

25

50

75

100

°C

150

T

j

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

V

2

V

GS(th)

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Datasheet

8

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

5 Typ. transfer characteristics

I

D

=f(V

IN

); V

DS

=12V; T

Jstart

=25°C

0

1

2

3

4

5

6

7

8

V

10

V

IN

0

1

2

3

4

5

6

A

8

I

D

6 Typ. short circuit current

I

D(lim)

 = f(T

j

); V

DS

=12V

Parameter: V

IN

-50

-25

0

25

50

75

100

125

°C

175

T

j

0

1

2

3

4

5

6

7

8

A

10

I

D(lim)

5V

Vin=10V

7 Typ. output characteristics

I

D

=f(V

DS

);  T

Jstart

=25°C

Parameter: V

IN

0

1

2

3

4

V

6

V

DS

0

1

2

3

4

5

6

7

8

A

10

I

D

3V

4V

5V

6V

7V

Vin=10V

8 Typ. off-state drain current
I

DSS

 = f(

T

j

)

-50

-25

0

25

50

75

100

125

°C

175

T

j

0

1

2

3

4

5

6

7

8

9

µA

11

I

DSS

typ.

max.

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Datasheet

9

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

9 Typ. overload current
I

D(lim)

 = f(

t)V

bb

=12 V, no heatsink

Parameter:

T

jstart

0

0.5

1

1.5

2

2.5

3

ms

4

t

0

2

4

6

8

A

12

I

D(lim)

-40°C

25°C

85°C

150°C

10 Typ. transient thermal impedance
Z

thJA

=f(

t

p

) @ 6 cm

2

 cooling area

Parameter:

D=t

p

/

T ; one channel on

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

s

t

P

-2

10

-1

10

0

10

1

10

2

10

K/W

Z

thJA

D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0

11 Determination of 

I

D(lim)

I

D(lim)

 = f(

t); t

m

 = 200µs

Parameter:

T

Jstart

0

0.1

0.2

0.3

0.4

ms

0.55

t

0

2

4

6

8

A

12

I

D(lim)

-40°C

25°C

85°C

150°C

12 Typ. transient thermal impedance
Z

thJA

=f(

t

p

) @ 6 cm

2

 cooling area

Parameter:

D=t

p

/

T ; both channels on

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

s

t

P

-2

10

-1

10

0

10

1

10

2

10

3

10

K/W

Z

thJA

D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0

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Datasheet

10

Rev. 1.3, 2007-11-06

 

 

Smart Low Side Power Switch

HITFET BTS 3410G

Package Outlines

1

Package Outlines

Figure 1

PG-DSO8-25 (Plastic Green Dual Small Outline Package) 

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with 
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e 
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order

+0.06

0.19

0.35 x 45˚

1)

-0.2

4

C

8 MAX.

0.64

±0.2

6

±0.25

0.2

8x

M

C

1.27

+0.1

0.41

0.2

M

A

-0.06

1.75 MAX.

(1.45)

±0.07

0.175

B

8x

B

2)

Index Marking

5

-0.2

1)

4

1

8

5

A

1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area

GPS01181

0.1

For further information on alternative packages, please visit our website: 

 

http://www.infineon.com/packages

.

Dimensions in mm

Maker
Infineon Technologies
Datasheet PDF Download