BTS3207N Green Datasheet Rev. 1.2

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Product Summary

Drain source voltage

V

DS

42

V

On-state resistance 

R

DS(on)

500

m

W

Nominal load current

I

D(Nom)

0.64 A

Clamping energy

E

AS

150

mJ

VPS05163

1

2

3

4

Application

· All kinds of resistive, inductive and capacitive loads in switching
   or linear applications
· µC compatible power switch for 12 V DC applications

· Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded
protection functions.

Gate-Driving

Unit

ESD

Overload
Protection

Over-
temperature
Protection

Short circuit
Protection

Overvoltage-
Protection

Current
Limitation

M

V

bb

In

Source

Drain

HITFET

â

Pin 1

Pin 2 and 4 (TAB)

Pin 3

Features

· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible

 

Datasheet

1

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

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Maximum Ratings at T

j

 = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Drain source voltage

V

DS

42

V

Supply voltage for full short circuit protection

6)

V

bb(SC)

42

Continuous input voltage

1)

V

IN

-0.2

2)

 ... +10

Continuous input current

2)

-0.2V

£ V

IN

£ 10V

V

IN

< -0.2V or

V

IN

> 10V

I

IN

self limited 

|

I

IN

|

£ 2 

mA

Operating temperature

T

j

-40 ...+150

°C

Storage temperature

T

stg

-55 ... +150

Power dissipation

5)

T

C

= 85 °C

P

tot

3.8

W

Unclamped single pulse inductive energy

2)

E

AS

150

mJ

Load dump protection

V

LoadDump

2)3)

=

V

A

+

V

S

V

IN

= 0 and 10 V, t

d

= 400 ms,

R

I

= 2

W,

R

L

= 9

W, V

A

= 13.5 V

V

LD

50

V

Electrostatic discharge voltage

2)

(Human Body Model)

according to 

Jedec norm

EIA/JESD22-A114-B, Section 4

V

ESD

2

kV

Thermal resistance

junction - ambient: 

@ min. footprint 

@ 6 cm

2

cooling area

4)

R

thJA

125

72

K/W

junction-soldering point:

R

thJS

17

K/W

1For input voltages beyond these limits I

IN

has to be limited.

2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
 connection. PCB mounted vertical without blown air.

5not subject to production test, calculated by R

thJA and Rds(on)

6For supply voltages above 22V the voltage drop Von has to be limited by Rsc=100mohm/V

 

Datasheet

2

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

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Electrical Characteristics

Parameter

Symbol

Values

Unit

at

T

j

 = 25°C, unless otherwise specified

min.

typ.

max.

Characteristics

Drain source clamp voltage 
T

j

= - 40 ...+ 150, 

I

D

 = 10 mA

V

DS(AZ)

42

-

55

V

Off-state drain current 
T

j

 = -40...+85 °C, 

V

bb

 = 32 V, 

V

IN

 = 0 V 

T

j

 = 150 °C

I

DSS

-

-

1.5

4

8

10

µA

Input threshold voltage 
I

D

= 0.

3 mA, T

j

= 25 °C 

I

D

= 0.

3 mA, T

j

= 150 °C

V

IN(th)

1.3

0.8

1.7

-

2.2

-

V

On state input current

I

IN(on)

-

10

30

µA

On-state resistance
V

IN

 = 5 V, 

I

D

 = 1.4 A, 

T

j

 = 25 °C 

V

IN

 = 5 V, 

I

D

 = 1.4 A, 

T

j

 = 150 °C

R

DS(on)

-

-

  -
  -

  600
1200

m

W

On-state resistance 
V

IN

 = 10 V, 

I

D

 = 1.4 A, 

T

j

 = 25 °C 

V

IN

= 10 V,

I

D

= 1.4 A,

T

j

= 150 °C

R

DS(on)

-

-

  -

  500
1000

Nominal load current

5)

V

DS

 = 0.5 V, 

T

j

 < 150°C, 

V

IN

 = 10 V, 

T

A

 = 85 °C

I

D(Nom)

0.64

 -

-

A

Current limit (active if 

V

DS

>2.5 V)

1)

V

IN

 = 10 V, 

V

DS

 = 12 V, 

t

m

 = 200 µs

I

D(lim)

5

7.5

10

1Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on conditi
and a short circuit occurs, these values  might be exceeded for max. 50 µs.

5not subject to production test, calculated by R

thJA and Rds(on)

  -

 

Datasheet

3

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

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Electrical Characteristics

Parameter

Symbol

Values

Unit

at

T

j

 = 25°C, unless otherwise specified

min.

typ.

max.

Dynamic Characteristics

Turn-on time       

V

IN

 to 90% 

I

D

:

R

L

 = 4.7 

W, V

IN

 = 0 to 10 V, 

V

bb

 = 12 V

t

on

-

45

100

µs

Turn-off time       

V

IN

 to 10% 

I

D

:

R

L

 = 4.7 

W, V

IN

 = 10 to 0 V, 

V

bb

 = 12 V

t

off

-

60

100

Slew rate on         70 to 50% 

V

bb

:

R

L

 = 4.7 

W, V

IN

 = 0 to 10 V, 

V

bb

 = 12 V

-dV

DS

/dt

on

-

0.4

1.5

V/µs

Slew rate off         50 to 70% 

V

bb

:

R

L

 = 4.7 

W, V

IN

 = 10 to 0 V, 

V

bb

 = 12 V

dV

DS

/dt

off

-

0.6

1.5

Protection Functions

1)

Thermal overload trip temperature

T

jt

150

175

-

°C

Thermal hysteresis

2)

DT

jt

-

10

-

K

Input current protection mode
T

j

 = 150 °C

I

IN(Prot)

-

40

300

µA

Unclamped single pulse inductive energy 

2)

I

D

 = 1.4 A, 

T

j

 = 25 °C, 

V

bb

 = 12 V

E

AS

150

-

-

mJ

Inverse Diode

Inverse diode forward voltage 
I

F

 = 7 A, 

t

m

 = 250 µs, 

V

IN

 = 0 V,

t

P

 = 300 µs

V

SD

-

1

1.5

V

1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design

 

Datasheet

4

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

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Block diagram

Inductive and overvoltage 
output clamp

Terms

HITFET

IN

D

VIN

I D

VDS

1

IIN

S

Vbb

RL

2

3

HITFET

V

Z

D

S

Short circuit behaviour

Input circuit (ESD protection)

Gate Drive

Source/
Ground

Input

V

IN

I

IN

I

DS

T

j

 

Datasheet

5

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

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1 Maximum allowable power dissipation

P

tot

 = f(T

S

)  resp. 

P

tot

 = f(T

A

) @ R

thJA

=72 K/W

-75

-50

-25

0

25

50

75

100

°C

150

T

S

 ;

T

A

0

1

2

3

4

5

6

7

8

W

10

P

tot

6cm2

max.

2 On-state resistance

R

ON

 = f(T

j

); I

D

=1.4A; V

IN

=10V

-50

-25

0

25

50

75

100

125

°C

175

T

j

0

100

200

300

400

500

600

700

800

m

W

1000

R

DS(on)

3 On-state resistance

R

ON

 = f(T

j

); I

D

= 1.4A; V

IN

=5V

-50

-25

0

25

50

75

100

125

°C

175

T

j

0

125

250

375

500

625

750

875

1000

m

W

1250

R

DS(on)

4 Typ. input threshold voltage

V

IN(th)

= f(T

j

);

I

D

=

0.3 mA; V

DS

= 12V

-50

-25

0

25

50

75

100

°C

150

T

j

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

V

2

V

GS(th)

max.

max.

 

Datasheet

6

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

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5 Typ. transfer characteristics

I

D

=f(V

IN

); V

DS

=12V; T

Jstart

=25°C

0

1

2

3

4

5

6

7

8

V

10

V

IN

0

1

2

3

4

5

6

A

8

I

D

6 Typ. short circuit current

I

D(lim)

 = f(T

j

); V

DS

=12V

Parameter: V

IN

-50

-25

0

25

50

75

100

125

°C

175

T

j

0

1

2

3

4

5

6

7

8

A

10

I

D(lim)

5V

Vin=10V

7 Typ. output characteristics

I

D

=f(V

DS

);  T

Jstart

=25°C

Parameter: V

IN

0

1

2

3

4

V

6

V

DS

0

1

2

3

4

5

6

7

8

A

10

I

D

3V

4V

5V

6V

7V

Vin=10V

8 Off-state drain current
I

DSS

 = f(

T

j

)

-50

-25

0

25

50

75

100

125

°C

175

T

j

0

1

2

3

4

5

6

7

8

9

µA

11

I

DSS

typ.

max.

 

Datasheet

7

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

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9 Typ. overload current
I

D(lim)

 = f(

t)V

bb

=12 V, no heatsink

Parameter:

T

jstart

0

0.5

1

1.5

2

2.5

3

ms

4

t

0

2

4

6

8

A

12

I

D(lim)

-40°C

25°C

85°C

150°C

10 Typ. transient thermal impedance
Z

thJA

=f(

t

p

) @ 6 cm

2

 cooling area

Parameter:

D=t

p

/

T

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

s

t

p

-2

10

-1

10

0

10

1

10

2

10

K/W

Z

thJA

Single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

11 Determination of 

I

D(lim)

I

D(lim)

 = f(

t); t

m

 = 200µs

Parameter:

T

Jstart

0

0.1

0.2

0.3

0.4

ms

0.55

t

0

2

4

6

8

A

12

I

D(lim)

-40°C

25°C

85°C

150°C

 

Datasheet

8

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

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background image

 

Datasheet

9

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

Package Outlines

1

Package Outlines

GPS05560

1

2

3

3

4

±0.1

±0.04

0.5 MIN.

0.28

0.1 MAX.

15˚ MAX.

6.5

±0.2

A

4.6

2.3

0.7

±0.1

0.25

M

A

1.6

±0.1

7

±0.3

B

0.25

M

±0.2

3.5

B

0...10˚

Figure 1

PG-SOT223-4 (Plastic Green Small Outline Transistor Package)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with 
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order

You can find all of our packages, sorts of packing and others in our

 

Infineon Internet Page “Products”: 

http://www.infineon.com/products

.

Dimensions in mm

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Datasheet

10

Rev. 1.2, 2008-04-14

 

 

Smart Low Side Power Switch

HITFET BTS 3207N

Revision History

2

Revision History

Version

Date

Changes

Rev. 1.2

2008-04-14

Package information updated to SOT223-4

Rev. 1.1

2007-03-28

released automotive green version
Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added

Rev. 1.0

2004-11-19

released production version

Maker
Infineon Technologies
Datasheet PDF Download