BTS141 Green Datasheet Throughhole Devices Rev. 1.4

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Features

• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection

• 

Current limitation

• Status feedback with external input resistor
• Analog driving possible

Product Summary

Drain source voltage

V

DS

60

V

On-state resistance 

R

DS(on)

28

m

Ω

Current limit

I

D(lim)

25

A

Nominal load current

I

D(ISO)

12

A

Clamping energy

E

AS

4000 mJ

Application

• All kinds of resistive, inductive and capacitive loads in switching or
   linear applications
• μC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits
 

General Description

N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Providing embedded protection functions.

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• 

AEC qualified

• Green product (RoHS compliant)

 

Datasheet

1

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

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Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Value

Unit

Drain source voltage

V

DS

60

V

Drain source voltage for short circuit protection

V

DS(SC)

32

Continuous input current 

1)

-0.2V 

≤ V

IN

 

≤ 10V

V

IN

 < -0.2V or 

V

IN

 > 10V

I

IN

  

no limit 

I

IN

 | 

≤ 2 

mA

Operating temperature

T

j

- 40 ... +150

°C

Storage temperature

T

stg

- 55 ... +150

Power dissipation 
T

C

 = 25 °C

P

tot

149

W

Unclamped single pulse inductive energy
I

D(ISO)

 = 12 A

E

AS

4000

mJ

Electrostatic discharge voltage 

(Human Body Model)

according to MIL STD 883D, method 3015.7 and

EOS/ESD assn. standard S5.1 - 1993

V

ESD

3000

V

Load dump protection 

V

LoadDump

2)

 = 

V

A

 + 

V

S

V

IN

=low or high; 

V

A

=13.5 V 

t

d

 = 400 ms, 

R

I

 = 2 

Ω, I

D

=0,5*12A 

t

d

 = 400 ms, 

R

I

 = 2 

Ω, I

D

= 12A

V

LD

 

100

84

Thermal resistance

junction - case:

R

thJC 

0.84

K/W

junction - ambient:

R

thJA

75

SMD version, device on PCB: 

3)

R

thJA

45

1In case of thermal shutdown a minimum sensor holding current of 500 μA has to be guaranteed  (see also page 3).
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70μm thick) copper area for Drain connection.
PCB mounted vertical without blown air.

 

Datasheet

2

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

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Electrical Characteristics

Parameter

Symbol

Values

Unit

at T

j

=25°C, unless otherwise specified

min.

typ.

max.

Characteristics

Drain source clamp voltage 
T

= - 40 ...+ 150°C, 

I

D

 = 10 mA

V

DS(AZ)

60

-

73

V

Off state drain current 
V

DS

 = 32 V, 

T

j

 = -40...+150 °C, 

V

IN

 = 0 V

I

DSS

-

-

20

μA

Input threshold voltage 
I

D

 = 2,7 mA

V

IN(th)

1.3

1.7

2.2

V

Input current - normal operation, 

I

D

<I

D(lim)

V

IN

 = 10 V

I

IN(1)

-

35

100

μA

Input current - current limitation mode, 

I

D

=

I

D(lim)

V

IN

 = 10 V

I

IN(2)

-

270

500

Input current - after thermal shutdown, 

I

D

=0 A: 

V

IN

 = 10 V

I

IN(3)

1000

2500

4000

Input holding current after thermal shutdown

1)

 

T

j

 = 25 °C 

T

j

 = 150 °C

I

IN(H)

 

500

300

 

-

-

 

-

-

On-state resistance  
V

IN

 = 5 V, 

I

D

 = 12 A, 

T

j

 = 25 °C 

V

IN

 = 5 V, 

I

D

 = 12 A, 

T

j

 = 150 °C

R

DS(on)

 

-

-

 

31

52

 

34

68

m

Ω

On-state resistance 
V

IN

 = 10 V, 

I

D

 = 12 A, 

T

j

 = 25 °C 

V

IN

 = 10 V, 

I

D

 = 12 A, 

T

j

 = 150 °C

R

DS(on)

 

-

-

 

25

45

 

28

56

Nominal load current (ISO 10483) 
V

IN

 = 10 V, 

V

DS

 = 0.5 V, 

T

C

 = 85 °C

I

D(ISO)

12

-

-

A

1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.

 

Datasheet

3

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

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Electrical Characteristics

Parameter

Symbol

Values

Unit

at T

j

=25°C, unless otherwise specified

min.

typ.

max.

Characteristics

Initial peak short circuit current limit 
V

IN

 = 10 V, 

V

DS

 = 12 V

I

D(SCp)

-

100

-

A

Current limit 

1)

 

V

IN

 = 10 V, 

V

DS

 = 12 V, 

t

m

 = 350 μs,  

T

j

 = -40...+150 °C

I

D(lim)

25

35

50

Dynamic Characteristics

Turn-on time       

V

IN

 to 90% 

I

D

R

L

 = 2,2 

Ω, V

IN

 = 0 to 10 V, 

V

bb

 = 12 V

t

on

-

40

100

μs

Turn-off time       

V

IN

 to 10% 

I

D

R

L

 = 2,2 

Ω, V

IN

 = 10 to 0 V, 

V

bb

 = 12 V

t

off

-

70

170

Slew rate on         70 to 50% 

V

bb

R

L

 = 2,2 

Ω, V

IN

 = 0 to 10 V, 

V

bb

 = 12 V

-dV

DS

/dt

on

-

1

3

V/μs

Slew rate off         50 to 70% 

V

bb

R

L

 = 2,2 

Ω, V

IN

 = 10 to 0 V, 

V

bb

 = 12 V

dV

DS

/dt

off

-

1

3

Protection Functions

Thermal overload trip temperature

T

jt

150

165

-

°C

Unclamped single pulse inductive energy 
I

D

 = 12 A, 

T

j

 = 25 °C, 

V

bb

 = 32 V 

I

D

 = 12 A, 

T

j

 = 150 °C, 

V

bb

 = 32 V

E

AS

 

4000

900

 

-

-

 

-

-

mJ

Inverse Diode

Inverse diode forward voltage 
I

F

 = 5*12A, 

t

m

 = 300 

μS, V

IN

 = 0 V

V

SD

-

1.13

-

V

1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values  might be exceeded for max. 50 μs.

2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation

.

2

)

 

Datasheet

4

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

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Block Diagramm

Terms

Inductive and overvoltage output clamp

HITFET

IN

D

VIN

ID

VDS

1

IIN

S

Vbb

RL

2

3

HITFET

V

Z

D

S

Short circuit behaviour

V IN

I D

I D(SCp)

t 0

tm

t 2

I D(Lim)

t 1

Input circuit (ESD protection)

IN

ESD-ZD

I

Source

ESD zener diodes are not designed
for DC current > 2 mA @ 

V

IN

>10V.

t0:    Turn on into a short circuit
tm:   Measurementpoint for ID(lim)
t1:     Activation of the fast temperature sensor and
         regulation of the drain current to a level where
         the junction temperature remains constant.
t2:     Thermal shutdown caused by the second
          temperature sensor, achieved by an 
          integrating measurement.

 

Datasheet

5

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

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On-state resistance

R

ON

 = f(T

j

); I

D

=12A; V

IN

=10V

-50

-25

0

25

50

75

100

°C

150

T

j

10 

20 

30 

40 

Ω

60 

R

DS(on)

typ.

max.

Maximum allowable power dissipation

P

tot

 = f(T

c

)

0

20

40

60

80

100

120

°C

160

150

20 

40 

60 

80 

100 

120 

W

160 

BTS 141

P

tot

On-state resistance

R

ON

 = f(T

j

); I

D

= 12A; V

IN

=5V

-50

-25

0

25

50

75

100

°C

150

T

j

10 

20 

30 

40 

50 

Ω

70 

R

DS(on)

typ.

max.

Typ. input threshold voltage

V

IN(th)

 = f(T

j

); I

D

=2,7mA; V

DS

=12V

-50

-25

0

25

50

75

100

°C

150

T

j

0.0 

0.2 

0.4 

0.6 

0.8 

1.0 

1.2 

1.4 

1.6 

V

2.0 

V

IN(th)

 

Datasheet

6

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

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Typ. transfer characteristics

I

D

 = f(V

IN

); V

DS

=12V; T

j

=25°C

0

1

2

3

4

5

6

V

8

V

IN

12 

16 

20 

A

28 

I

D

Typ. output characteristic

I

D

 = f(V

DS

); T

j

=25°C

Parameter: V

IN

0

1

2

3

4

V

6

V

DS

10 

15 

20 

25 

A

35 

I

D

Vin=3V

4V

5V

6V

10V

Transient thermal impedance
Z

thJC

 = 

(t

p

)

parameter : 

t

p

/

T

10 

-7 

10 

-6 

10 

-5 

10 

-4 

10 

-3 

10 

-2 

10 

-1 

10 

10 

s

t

P

-3 

10 

-2 

10 

-1 

10 

10 

10 

K/W

Z

thJC

0

0.005

0.01

0.02

0.05

0.1

0.2

D=0.5

 

Datasheet

7

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

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Application examples:

Status signal of thermal shutdown by 
monitoring input current

D

S

IN

μC

V

bb

HITFET

V

IN

RSt

V

IN

thermal shutdown

Δ V

μC

ΔV = R

ST

 *

I

IN(3)

 

Datasheet

8

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

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background image

 

Datasheet

9

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

Package Outlines

1

Package Outlines

A

B

A

0.25

M

Typical

9.9

±0.2

2.8

1)

15.65

±0.3

12.95

0...0.15

2.54

0.75

±0.1

1.05

±0.1

1.27

4.4

B

9.25

±0.2

0.05

1)

All metal surfaces tin plated, except area of cut.

C

±0.2

17

±0.3

8.5

1)

10

±0.2

3.7

-0.15

C

2.4

0.5

±0.1

±0.2

4.55

13.5

±0.5

3x

Metal surface min. x=7.25, y=12.3

0...0.3

2x

2.4

Figure 1

PG-TO220-3-1 

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with 
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

You can find all of our packages, sorts of packing and others in our

 

Infineon Internet Page “Products”: 

http://www.infineon.com/products

.

Dimensions in mm

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Datasheet

10

Rev. 1.4, 2012-07-11

 

 

Smart Low Side Power Switch

HITFET BTS 141

Revision History

2

Revision History

Version

Date

Changes

Rev. 1.4

2012-07-11

released through hole automotive green Datasheet
Package drawing update, removed staggered package
added through hole version in green package

Rev. 1.3

2008-12-10

Package drawing update

Rev. 1.2

2008-08-11

Package information updated, removed through hole version

Rev. 1.1

2008-02-22

Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon and RoHS icon added
Green product and AEC qualified added to feature list
added Protection footnote on Page 4 and changed front page general description
Package infromation updated to green
Green explanation added

Rev. 1.0

2000-05-19

released production version

Maker
Infineon Technologies
Datasheet PDF Download